Preparation of silicon nitride films at room temperature using double‐tubed coaxial line‐type microwave plasma chemical vapor deposition system

1987 ◽  
Vol 62 (2) ◽  
pp. 492-497 ◽  
Author(s):  
Isamu Kato ◽  
Kazuto Noguchi ◽  
Kouji Numada
Keyword(s):  
Silicon Nitride ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Coaxial Line ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Nitride Films ◽  
Line Type

Preparation of Plasma Chemical Vapor Deposition Silicon Nitride Films from SiH2F2and NH3Source Gases

1991 ◽  
Vol 30 (Part 2, No. 4A) ◽  
pp. L619-L621 ◽  
Author(s):  
Nobuaki Watanabe ◽  
Mamoru Yoshida ◽  
Yi-Chao Jiang ◽  
Tutomu Nomoto ◽  
Ichimatsu Abiko
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Nitride Films

Electrical Conductivity as a Function of Temperature of Diamond films Grown by Downstream Microwave Plasma Chemical Vapor Deposition

1992 ◽  
Vol 270 ◽  
Author(s):  
Brian R. Stoner ◽  
Jesko A. von Windheim ◽  
Jeffrey T. Glass
Keyword(s):  
Electrical Conductivity ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Conductivity Measurements ◽  
Plasma Chemical ◽  
Hydrogen Incorporation ◽  
Plasma Chemical Vapor Deposition

ABSTRACTElectrical conductivity measurements were used to study the effects that sample distance from the plasma during growth has on the carrier transport properties of undoped CVD diamond. The films were grown by downstream microwave plasma chemical vapor deposition at distances from 0.5 to 2.0 cm from the edge of plasma glow. Electrical conductivity measurements were performed between room temperature and 1000 °C to gain a better understanding of the CVD growth process and the resulting electrical properties of the diamond film's. Room temperature electrical conductivity was found to vary by over 5 orders of magnitude with increasing growth distance from the plasma, and this is attributed to decreasing hydrogen incorporation efficiencies at further distances from the plasma.

Optical properties of silicon nitride films formed by plasma-chemical vapor deposition

2013 ◽  
Vol 80 (1) ◽  
pp. 89-92 ◽  
Author(s):  
L. A. Vlasukova ◽  
F. F. Komarov ◽  
I. N. Parkhomenko ◽  
O. V. Milchanin ◽  
A. V. Leont’ev ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Nitride Films
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