Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors

Hot Carrier Degradation in Semiconductor Devices ◽

10.1007/978-3-319-08994-2_13 ◽

2014 ◽

pp. 371-398 ◽

Cited By ~ 4

Author(s):

Partha S. Chakraborty ◽

John D. Cressler

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Bipolar Transistors ◽

Hot Carrier ◽

Hot Carrier Degradation

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Avalanche current induced hot carrier degradation in 200 GHz SiGe heterojunction bipolar transistors

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197770 ◽

2003 ◽

Cited By ~ 18

Author(s):

Zhijian Yang ◽

F. Guarin ◽

E. Hostetter ◽

G. Freeman

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Hot Carrier ◽

Hot Carrier Degradation

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Time-Dependent Hot Carrier Degradation in Polysilicon Emitter Bipolar Transistors Under High Current and Radiation Combined Stress

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3097695 ◽

2021 ◽

pp. 1-6

Author(s):

Peijian Zhang ◽

Zicheng Xu ◽

Tao Wang ◽

Wensuo Chen ◽

Min Hong ◽

...

Keyword(s):

Bipolar Transistors ◽

Time Dependent ◽

High Current ◽

Combined Stress ◽

Hot Carrier ◽

Polysilicon Emitter ◽

Hot Carrier Degradation

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SILICON: GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS; FROM EXPERIMENT TO TECHNOLOGY

Selected Topics in Electronics and Systems - Current Trends in Heterojunction Bipolar Transistors ◽

10.1142/9789812831309_0010 ◽

1996 ◽

pp. 367-385 ◽

Cited By ~ 6

Author(s):

B. S. MEYERSON ◽

D. L. HARAME ◽

J. STORK ◽

E. CRABBE ◽

J. COMFORT ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Bipolar Transistors

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Analysis of base recombination effect in very high maximum oscillation frequency silicon-germanium heterojunction bipolar transistors

(ICEEE). 1st International Conference on Electrical and Electronics Engineering, 2004. ◽

10.1109/iceee.2004.1433883 ◽

2005 ◽

Cited By ~ 1

Author(s):

G. Khanduri ◽

B.S. Panwar

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Oscillation Frequency ◽

Bipolar Transistors ◽

Maximum Oscillation Frequency ◽

High Maximum ◽

Very High ◽

Recombination Effect

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Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) ◽

10.1109/eosesd.2000.890052 ◽

2002 ◽

Cited By ~ 17

Author(s):

S. Voldman ◽

P. Juliano ◽

J. Schmidt ◽

R. Johnson ◽

L. Lanzerotti ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Electrostatic Discharge ◽

Bipolar Transistors

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Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) ◽

10.1109/relphy.2000.843932 ◽

2002 ◽

Cited By ~ 8

Author(s):

S. Voldman ◽

P. Juliano ◽

R. Johnson ◽

N. Schmidt ◽

A. Joseph ◽

...

Keyword(s):

Current Pulse ◽

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Electrostatic Discharge ◽

Bipolar Transistors ◽

High Current ◽

Pulse Characterization

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Doping profile and Ge-dose optimization for silicon–germanium heterojunction bipolar transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/24/10/105020 ◽

2009 ◽

Vol 24 (10) ◽

pp. 105020 ◽

Cited By ~ 1

Author(s):

Yiming Li ◽

Ying-Chieh Chen ◽

Chih-Hong Hwang

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Bipolar Transistors ◽

Doping Profile ◽

Dose Optimization

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The influence of process and design of subcollectors on the ESD robustness of ESD structures and silicon germanium heterojunction bipolar transistors in a BiCMOS SiGe technology

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197772 ◽

2003 ◽

Cited By ~ 3

Author(s):

S.H. Voldman ◽

L. Lanzerotti ◽

B. Ronan ◽

S. St Onge ◽

J. Dunn

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Bipolar Transistors

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Hot carrier effects on the correlation resistance in Si/SiGe heterojunction bipolar transistors

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919018 ◽

2002 ◽

Author(s):

M. Borgarino ◽

L. Bary ◽

J. Kuchenbecker ◽

J.G. Tartarin ◽

H. Lafontaine ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Hot Carrier ◽

Hot Carrier Effects

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Nuclear microbeam studies of silicon–germanium heterojunction bipolar transistors (HBTs)

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2010.02.016 ◽

2010 ◽

Vol 268 (11-12) ◽

pp. 2092-2098 ◽

Cited By ~ 9

Author(s):

G. Vizkelethy ◽

S.D. Phillips ◽

L. Najafizadeh ◽

J.D. Cressler

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Bipolar Transistors

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