8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)
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CIA-a comprehensive CAD tool for analog, RF, and microwave IC's

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919061 ◽

2002 ◽

Cited By ~ 3

Author(s):

J. Dobes

Keyword(s):

Cad Tool

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First demonstration of InAlAs/InGaAs HEMTs using T-gates fabricated by a bilayer of UVIII and PMMA resists

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919059 ◽

2002 ◽

Cited By ~ 2

Author(s):

Y. Chen ◽

T. Lodhi ◽

H. McLelland ◽

D.L. Edgar ◽

D. Macintyre ◽

...

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Measurements and analysis of the optimisation of HBT circuits for optical demodulator designs

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919067 ◽

2002 ◽

Cited By ~ 1

Author(s):

P.J. Langlois ◽

A.A. Rezazadeh

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Design of nearly body-effect free Si/SiGe MODFETs

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919023 ◽

2002 ◽

Author(s):

J.E. Velazquez ◽

W. Jeamsaksiri ◽

J.C. Yeoh ◽

K. Fobelets

Keyword(s):

Body Effect

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Efficient direct modulation of colliding pulse mode-locked lasers on semi-insulating substrate at 1.5 μm

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919051 ◽

2002 ◽

Author(s):

H.K. Lee ◽

M.W. Street ◽

I.G. Thayne ◽

A.C. Bryce ◽

J.H. Marsh

Keyword(s):

Pulse Mode ◽

Direct Modulation ◽

Mode Locked Lasers

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GaN/AlGaN HFETs fabricated on a SiC substrate

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919032 ◽

2002 ◽

Cited By ~ 1

Author(s):

M.J. Uren ◽

T. Martin ◽

J.C. Birbeck ◽

R. Balmer ◽

B.T. Hughes ◽

...

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The gate-length dependent performance of AlGaN/GaN HFETs with silicon nitride passivation

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919033 ◽

2002 ◽

Cited By ~ 2

Author(s):

R.A. Davies ◽

D.J. Bazley ◽

S.K. Jones ◽

H.A. Lovekin ◽

W.A. Phillips ◽

...

Keyword(s):

Silicon Nitride ◽

Gate Length

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Si/SiGe IC's with low cost in the 15 to 20 GHz range

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919022 ◽

2002 ◽

Cited By ~ 2

Author(s):

T. Teppo ◽

E. Sonmez ◽

K.-B. Schad ◽

L. Abele ◽

H. Schumacher

Keyword(s):

Low Cost

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The Ultrafast Photonics Collaboration (UPC)

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919026 ◽

2002 ◽

Author(s):

T.F. Krauss

Keyword(s):

Ultrafast Photonics

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Metal gate strained silicon MOSFETs for microwave integrated circuits

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919024 ◽

2002 ◽

Cited By ~ 1

Author(s):

G. Ternent ◽

D.L. Edger ◽

H. McLelland ◽

F. Williamson ◽

S. Ferguson ◽

...

Keyword(s):

Integrated Circuits ◽

Strained Silicon ◽

Metal Gate ◽

Microwave Integrated Circuits

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8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

CIA-a comprehensive CAD tool for analog, RF, and microwave IC's

First demonstration of InAlAs/InGaAs HEMTs using T-gates fabricated by a bilayer of UVIII and PMMA resists

Measurements and analysis of the optimisation of HBT circuits for optical demodulator designs

Design of nearly body-effect free Si/SiGe MODFETs

Efficient direct modulation of colliding pulse mode-locked lasers on semi-insulating substrate at 1.5 μm

GaN/AlGaN HFETs fabricated on a SiC substrate

The gate-length dependent performance of AlGaN/GaN HFETs with silicon nitride passivation

Si/SiGe IC's with low cost in the 15 to 20 GHz range

The Ultrafast Photonics Collaboration (UPC)

Metal gate strained silicon MOSFETs for microwave integrated circuits

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)
Latest Publications