The influence of process and design of subcollectors on the ESD robustness of ESD structures and silicon germanium heterojunction bipolar transistors in a BiCMOS SiGe technology

2003 ◽  
Author(s):  
S.H. Voldman ◽  
L. Lanzerotti ◽  
B. Ronan ◽  
S. St Onge ◽  
J. Dunn
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Germanium ◽  
Bipolar Transistors

scholarly journals Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates

2013 ◽  
Vol 62 (19) ◽  
pp. 196104
Author(s):  
Sun Ya-Bin ◽  
Fu Jun ◽  
Xu Jun ◽  
Wang Yu-Dong ◽  
Zhou Wei ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Germanium ◽  
Bipolar Transistors ◽  
Dose Rates

Si/SiGe heterostructures in nanoelectronics

2017 ◽  
Author(s):  
Douglas J. Paul
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Germanium ◽  
Bipolar Transistors ◽  
Research Field ◽  
Market Place ◽  
Oxide Semiconductors ◽  
Quantum Cascade ◽  
Resonant Tunnelling ◽  
Good Potential ◽  
Fundamental Research

This article describes the applications of Si/SiGe heterostructures in nanoelectronics. Silicon-germanium is now a mature field with heterojunction bipolar transistors (HBTs) and complementary metal oxide semiconductors (CMOS) products in the market place. In the research field there are many areas where Si/SiGe heterostructures are being used to bandgap engineer nanoelectronic devices resulting in significant improvements in device performance. A number of these areas have good potential for eventually reaching production, while thereare also many that allow fundamental research on the physics of materials anddevices. This article begins with an overview of the growth of silicon-germanium alloys, followed by a discussion of the effect of strain on the band structure and properties of Si/SiGe devices. It then considers two mainstream nanoelectronic applications of Si/SiGe heterostructures, namely HBTs and CMOS. It also looks at resonant tunnelling diodes and SiGe quantum cascade emitters.

scholarly journals Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

2016 ◽  
Vol 2016 ◽  
pp. 1-5
Author(s):  
Chie-In Lee ◽  
Yan-Ting Lin ◽  
Wei-Cheng Lin
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Germanium ◽  
Noise Figure ◽  
Rf Circuits ◽  
Bipolar Transistors ◽  
Parameter Analysis ◽  
Noise Performance ◽  
Noise Spectral Density ◽  
Breakdown Mechanism ◽  
Breakdown Region

Noise parameters of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) for different sizes are investigated in the breakdown region for the first time. When the emitter length of SiGe HBTs shortens, minimum noise figure at breakdown decreases. In addition, narrower emitter width also decreases noise figure of SiGe HBTs in the avalanche region. Reduction of noise performance for smaller emitter length and width of SiGe HBTs at breakdown resulted from the lower noise spectral density resulting from the breakdown mechanism. Good agreement between experimental and simulated noise performance at breakdown is achieved for different sized SiGe HBTs. The presented analysis can benefit the RF circuits operating in the breakdown region.

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