Avalanche current induced hot carrier degradation in 200 GHz SiGe heterojunction bipolar transistors

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197770 ◽

2003 ◽

Cited By ~ 18

Author(s):

Zhijian Yang ◽

F. Guarin ◽

E. Hostetter ◽

G. Freeman

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Hot Carrier ◽

Hot Carrier Degradation

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Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors

Hot Carrier Degradation in Semiconductor Devices ◽

10.1007/978-3-319-08994-2_13 ◽

2014 ◽

pp. 371-398 ◽

Cited By ~ 4

Author(s):

Partha S. Chakraborty ◽

John D. Cressler

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Bipolar Transistors ◽

Hot Carrier ◽

Hot Carrier Degradation

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Time-Dependent Hot Carrier Degradation in Polysilicon Emitter Bipolar Transistors Under High Current and Radiation Combined Stress

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3097695 ◽

2021 ◽

pp. 1-6

Author(s):

Peijian Zhang ◽

Zicheng Xu ◽

Tao Wang ◽

Wensuo Chen ◽

Min Hong ◽

...

Keyword(s):

Bipolar Transistors ◽

Time Dependent ◽

High Current ◽

Combined Stress ◽

Hot Carrier ◽

Polysilicon Emitter ◽

Hot Carrier Degradation

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Hot carrier effects on the correlation resistance in Si/SiGe heterojunction bipolar transistors

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919018 ◽

2002 ◽

Author(s):

M. Borgarino ◽

L. Bary ◽

J. Kuchenbecker ◽

J.G. Tartarin ◽

H. Lafontaine ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Hot Carrier ◽

Hot Carrier Effects

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Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation

Microelectronics Reliability ◽

10.1016/s0026-2714(00)00175-x ◽

2000 ◽

Vol 40 (8-10) ◽

pp. 1579-1584 ◽

Cited By ~ 5

Author(s):

J Kuchenbecker ◽

M Borgarino ◽

A Coustou ◽

R Plana ◽

J Graffeuil ◽

...

Keyword(s):

Numerical Simulation ◽

Ionizing Radiation ◽

Heterojunction Bipolar Transistors ◽

Low Complexity ◽

Bipolar Transistors ◽

Hot Carrier ◽

Radiation Induced

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Hot-carrier induced degradation in InP/InGaAs/InP double heterojunction bipolar transistors

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) ◽

10.1109/iciprm.1999.773729 ◽

2003 ◽

Cited By ~ 5

Author(s):

Hong Wang ◽

Geok Ing Ng ◽

S.P. McAlister ◽

R. Driad ◽

R. McKinnon

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Hot Carrier ◽

Double Heterojunction

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Profiling the hot carrier induced damage in InP/InGaAs/InP double heterojunction bipolar transistors by using a current transient technique

Thin Solid Films ◽

10.1016/j.tsf.2006.07.106 ◽

2007 ◽

Vol 515 (10) ◽

pp. 4390-4392

Author(s):

Chai Wah Ng ◽

Hong Wang

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Transient ◽

Transient Technique ◽

Hot Carrier ◽

Double Heterojunction ◽

A Current

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Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2004 (IEEE Cat No 04TH8743) IPFA-04 ◽

10.1109/ipfa.2004.1345589 ◽

2004 ◽

Author(s):

Sheng-Yi Huang ◽

Kun-Ming Chen ◽

Guo-Wei Huang ◽

Tsun-Lai Hsu ◽

Hua-Chou Tseng ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Rf Power ◽

Hot Carrier ◽

Power Characteristics

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Hot-carrier degradation in bipolar transistors at 300 and 110 K-effect on BiCMOS inverter performance

IEEE Transactions on Electron Devices ◽

10.1109/16.52460 ◽

1990 ◽

Vol 37 (4) ◽

pp. 1171-1173 ◽

Cited By ~ 14

Author(s):

J.D. Burnett ◽

C. Hu

Keyword(s):

Bipolar Transistors ◽

Hot Carrier ◽

Hot Carrier Degradation

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Studies on hot carrier-induced degradation on RF performance in InP/InGaAs double heterojunction bipolar transistors

International Conference on Indium Phosphide and Related Materials, 2005. ◽

10.1109/iciprm.2005.1517523 ◽

2005 ◽

Author(s):

Chai-Wah Ng ◽

Hong Wang ◽

Rong Zeng

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Hot Carrier ◽

Double Heterojunction ◽

Rf Performance

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A unified approach for hot-carrier degradation of current gain and 1/f noise of polysilicon emitter bipolar transistors

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1997.647406 ◽

2002 ◽

Cited By ~ 2

Author(s):

S. Decoutere ◽

E. Simoen ◽

G. Vancuyck ◽

L. Deferm ◽

C. Claeys

Keyword(s):

Bipolar Transistors ◽

Current Gain ◽

Unified Approach ◽

Hot Carrier ◽

Polysilicon Emitter ◽

Hot Carrier Degradation

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