Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

2002 ◽  
Author(s):  
S. Voldman ◽  
P. Juliano ◽  
R. Johnson ◽  
N. Schmidt ◽  
A. Joseph ◽  
...  
Keyword(s):  
Current Pulse ◽  
Heterojunction Bipolar Transistors ◽  
Silicon Germanium ◽  
Electrostatic Discharge ◽  
Bipolar Transistors ◽  
High Current ◽  
Pulse Characterization

Thermal characterization of thermally-shunted heterojunction bipolar transistors

1996 ◽  
Vol 17 (1) ◽  
pp. 19-21 ◽  
Author(s):  
J. Sewell ◽  
L.L. Liou ◽  
D. Barlage ◽  
J. Barrette ◽  
C. Bozada ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Thermal Characterization ◽  
Bipolar Transistors

Microstructural Characterization of High-Pressure Oxidized Si1-x Gex /Si Heterolayers

1992 ◽  
Vol 280 ◽  
Author(s):  
N. David Theodore ◽  
Gordon Tam
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Atmospheric Pressure ◽  
High Pressures ◽  
Microstructural Characterization ◽  
Bipolar Transistors ◽  
Pure Silicon ◽  
Device Structures ◽  
Microstructural Behavior ◽  
Very High

ABSTRACTSiGe alloys have recently been of interest for fabrication of heterojunction bipolar transistors using pre-existing or modified silicon-processing technology. These devices are faster than devices using pure silicon. Because of the interest in developing SiGe device structures, various elements of processing relevant to fabrication of the devices are being investigated. One such element has been the use of thermal oxidation for isolation of SiGe devices. Utilization of the technique requires an understanding of oxidation behavior of SiGe layers under a variety of oxidation conditions. Past studies in the literature have investigated the oxidation of SiGe at atmospheric pressure or at very high pressures (∼650–1300 atmospheres). The present study investigates the wet-oxidation of SiGe structures at intermediate pressures (∼25 atmospheres) and temperatures (∼750°C). Unlike atmospheric oxidation, most of the Ge (from SiGe) remains in the oxidized silicon (SiO2) in the form of GeO2. Occasional segregation of Ge to the oxidizing interface is noted. The microstructural behavior of partially and entirely oxidized structures is presented.

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