A Strategy for Patterning Conducting Polymers Using Nanoimprint Lithography and Isotropic Plasma Etching

Small ◽  
2009 ◽  
Vol 5 (5) ◽  
pp. 583-586 ◽  
Author(s):  
Chunyu Huang ◽  
Bin Dong ◽  
Nan Lu ◽  
Bingjie Yang ◽  
Liguo Gao ◽  
...  
2005 ◽  
Vol 04 (04) ◽  
pp. 701-707
Author(s):  
KWONG-LUCK TAN ◽  
CIPRIAN ILIESCU ◽  
FRANCIS TAY ◽  
HUI-TONG CHUA ◽  
JIANMIN MIAO

The paper presents the fabrication of nanotips cold-end contact for microcooling system. The fabrication process is based on an optimized isotropic plasma etching in SF 6/ O 2 using an ICP-deep RIE system from STS. We managed to fabricate the radius of the nanotips which are below 50 nm.


2009 ◽  
Vol 19 (20) ◽  
pp. 3279-3284 ◽  
Author(s):  
Alfred Plettl ◽  
Fabian Enderle ◽  
Marc Saitner ◽  
Achim Manzke ◽  
Christian Pfahler ◽  
...  

1989 ◽  
Vol 7 (3) ◽  
pp. 670-675 ◽  
Author(s):  
W. G. M. van den Hoek ◽  
T. E. Wicker ◽  
B. F. Westlund ◽  
G. B. Powell

2007 ◽  
Vol 1002 ◽  
Author(s):  
Francesca Brunetti ◽  
Stefan Harrer ◽  
Giuseppe Scarpa ◽  
Paolo Lugli ◽  
Mike Kubenz ◽  
...  

ABSTRACTWe performed combined thermal and ultraviolet nanoimprint lithography (TUV-NIL) using a recently developed nanoimprint polymer (mr-NIL 6000 from Micro Resist technology GmbH) and achieved an imprinted feature size of 50 nm. We used commercially available 2-inch-diameter transparent quartz molds (NIL Technology, Denmark and Obducat, Sweden) comprising 150 nm to 190 nm-deep features of various shapes and aspect ratios with lateral dimensions ranging between 50 nm and 300 nm. The imprint polymer was spun onto a silicon substrate, covered with an oxide layer. After the TUV-NIL step, residual polymer layers at the bottom of the imprinted features were removed by oxygen plasma etching. Imprinted patterns were then transferred into the silicon oxide layer underneath by reactive ion etching (RIE). In a final step the residual polymer was stripped off the silicon oxide surface in an oxygen asher. All imprinted features as well as the corresponding pattern transfer results showed good surface and sidewall characteristics.


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