Isotropic plasma etching of doped and undoped silicon dioxide for contact holes and vias

1989 ◽  
Vol 7 (3) ◽  
pp. 670-675 ◽  
Author(s):  
W. G. M. van den Hoek ◽  
T. E. Wicker ◽  
B. F. Westlund ◽  
G. B. Powell
Keyword(s):  
Silicon Dioxide ◽  
Plasma Etching ◽  
Isotropic Plasma

NANOTIPS COLD-END CONTACT FOR MICROCOOLING SYSTEMS

2005 ◽  
Vol 04 (04) ◽  
pp. 701-707
Author(s):  
KWONG-LUCK TAN ◽  
CIPRIAN ILIESCU ◽  
FRANCIS TAY ◽  
HUI-TONG CHUA ◽  
JIANMIN MIAO
Keyword(s):  
Plasma Etching ◽  
Fabrication Process ◽  
Isotropic Plasma

The paper presents the fabrication of nanotips cold-end contact for microcooling system. The fabrication process is based on an optimized isotropic plasma etching in SF 6/ O 2 using an ICP-deep RIE system from STS. We managed to fabricate the radius of the nanotips which are below 50 nm.

AES and XPS studies of surface films deposited during the plasma etching of silicon dioxide layers

1984 ◽  
Vol 6 (6) ◽  
pp. 267-273 ◽  
Author(s):  
C. G. Tuppen ◽  
R. Heckingbottom ◽  
M. Gill ◽  
C. Heslop ◽  
G. J. Davies
Keyword(s):  
Silicon Dioxide ◽  
Plasma Etching ◽  
Surface Films

Plasma Etching of Silicon Dioxide and Silicon Nitride with Non-Perfluorocompound Chemistries: Trifluoroacetic Anhydride and Iodofluorocarbons

1996 ◽  
Vol 447 ◽  
Author(s):  
Simon M. Karecki ◽  
Laura C. Pruette ◽  
L. Rafael Reif
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Plasma Etching ◽  
Etch Rate ◽  
Gas Flow ◽  
Sulfur Hexafluoride ◽  
Semiconductor Industry ◽  
Chemical Vapor ◽  
Trifluoroacetic Anhydride ◽  
Auger Electron Spectroscopy Data

AbstractPresently, the semiconductor industry relies almost exclusively on perfluorocompounds (e.g., tetrafluoromethane, hexafluoroethane, nitrogen trifluoride. sulfur hexafluoride, and. more recently, octafluoropropane) for the etching of silicon dioxide and silicon nitride films in wafer patterning and PECVD (plasma enhanced chemical vapor deposition) chamber cleaning applications. The use of perfluorocompounds (PFCs) by the industry is considered problematic because of the high global warming potentials (GWPs) associated with these substances. Potential replacements for perfluorocompounds are presently being evaluated at MIT. In an initial stage of the study, intended to screen potential candidates on the basis of etch performance, a large number of compounds is being tested in a commercially available magnetically enhanced reactive ion etch tool. The potential alternatives discussed in this work are trifluoroacetic anhydride (TFAA) and three members of the iodofluorocarbon (IFC) family – iodotrifluoromethane, iodopentafluorocthane, and 2-iodoheptafluoropropane. This paper will present the results of etch rate comparisons between TFAA and octafluoropropane, a perfluorinated dielectric etchant. Designed experiment (DOE) methodology, combined with neural network software, was used to study a broad parameter space of reactor conditions. The effects of pressure, magnetic field, and gas flow rates were studied. Additionally, more limited tests were carried out with the three iodofluorocarbon gases. Etch rate data, as well as Auger electron spectroscopy data from substrates exposed to IFC plasmas will be presented. All gases were evaluated using both silicon dioxide as well as silicon nitride substrates. Results indicate that these compounds may be potentially viable in plasma etching applications.

Low-Roughness Plasma Etching of HgCdTe Masked with Patterned Silicon Dioxide

2011 ◽  
Vol 40 (8) ◽  
pp. 1642-1646 ◽  
Author(s):  
Z. H. Ye ◽  
W. D. Hu ◽  
W. T. Yin ◽  
J. Huang ◽  
C. Lin ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Plasma Etching
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