scholarly journals High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs

2017 ◽  
Vol 214 (8) ◽  
pp. 1600797 ◽  
Author(s):  
Ezgi Dogmus ◽  
Riad Kabouche ◽  
Astrid Linge ◽  
Etienne Okada ◽  
Malek Zegaoui ◽  
...  
Keyword(s):  
High Power ◽  
Barrier Thickness ◽  
Gan Hemts

Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs

2001 ◽  
Vol 22 (11) ◽  
pp. 504-506 ◽  
Author(s):  
V. Tilak ◽  
B. Green ◽  
V. Kaper ◽  
H. Kim ◽  
T. Prunty ◽  
...  
Keyword(s):  
High Power ◽  
Barrier Thickness ◽  
Power Performance ◽  
Gan Hemts

scholarly journals Figures of merit in high-frequency and high-power GaN HEMTs

2009 ◽  
Vol 193 ◽  
pp. 012040 ◽  
Author(s):  
F A Marino ◽  
N Faralli ◽  
D K Ferry ◽  
S M Goodnick ◽  
M Saraniti
Keyword(s):  
High Power ◽  
High Frequency ◽  
Figures Of Merit ◽  
Gan Hemts

High power AlGaN/GaN HEMTs for microwave applications

1997 ◽  
Vol 41 (10) ◽  
pp. 1569-1574 ◽  
Author(s):  
Y.-F. Wu ◽  
B.P. Keller ◽  
S. Keller ◽  
D. Kapolnek ◽  
P. Kozodoy ◽  
...  
Keyword(s):  
High Power ◽  
Microwave Applications ◽  
Gan Hemts

55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

2008 ◽  
Vol 29 (8) ◽  
pp. 834-837 ◽  
Author(s):  
J.S. Moon ◽  
D. Wong ◽  
M. Hu ◽  
P. Hashimoto ◽  
M. Antcliffe ◽  
...  
Keyword(s):  
High Power ◽  
Ka Band ◽  
Gan Hemts ◽  
Source Contact

High-power AlGaN∕GaN HEMTs on resistive silicon substrate

2002 ◽  
Vol 38 (14) ◽  
pp. 750 ◽  
Author(s):  
V. Hoël ◽  
N. Vellas ◽  
C. Gaquière ◽  
J.C. De Jaeger ◽  
Y. Cordier ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Gan Hemts
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