A new high power device of GaN HEMTs on Si substrate with lateral heat dissipation packaging
2013 ◽
Vol 51
(1-2)
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pp. 20-24
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Keyword(s):
Keyword(s):
2015 ◽
Vol 55
(2)
◽
pp. 383-388
◽
Keyword(s):
2000 ◽
2009 ◽
Vol 193
◽
pp. 012040
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