High-power AlGaN∕GaN HEMTs on resistive silicon substrate

2002 ◽  
Vol 38 (14) ◽  
pp. 750 ◽  
Author(s):  
V. Hoël ◽  
N. Vellas ◽  
C. Gaquière ◽  
J.C. De Jaeger ◽  
Y. Cordier ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Gan Hemts

scholarly journals Figures of merit in high-frequency and high-power GaN HEMTs

2009 ◽  
Vol 193 ◽  
pp. 012040 ◽  
Author(s):  
F A Marino ◽  
N Faralli ◽  
D K Ferry ◽  
S M Goodnick ◽  
M Saraniti
Keyword(s):  
High Power ◽  
High Frequency ◽  
Figures Of Merit ◽  
Gan Hemts

Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

2006 ◽  
Vol 53 (6) ◽  
pp. 1474-1477 ◽  
Author(s):  
Shuo Jia ◽  
Yong Cai ◽  
Deliang Wang ◽  
Baoshun Zhang ◽  
K.M. Lau ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Enhancement Mode ◽  
Gan Hemts

High power AlGaN/GaN HEMTs for microwave applications

1997 ◽  
Vol 41 (10) ◽  
pp. 1569-1574 ◽  
Author(s):  
Y.-F. Wu ◽  
B.P. Keller ◽  
S. Keller ◽  
D. Kapolnek ◽  
P. Kozodoy ◽  
...  
Keyword(s):  
High Power ◽  
Microwave Applications ◽  
Gan Hemts

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

2008 ◽  
Vol 29 (8) ◽  
pp. 834-837 ◽  
Author(s):  
J.S. Moon ◽  
D. Wong ◽  
M. Hu ◽  
P. Hashimoto ◽  
M. Antcliffe ◽  
...  
Keyword(s):  
High Power ◽  
Ka Band ◽  
Gan Hemts ◽  
Source Contact

Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs

2001 ◽  
Vol 22 (11) ◽  
pp. 504-506 ◽  
Author(s):  
V. Tilak ◽  
B. Green ◽  
V. Kaper ◽  
H. Kim ◽  
T. Prunty ◽  
...  
Keyword(s):  
High Power ◽  
Barrier Thickness ◽  
Power Performance ◽  
Gan Hemts
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