cellular monte carlo
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2016 ◽  
Vol 139 (3) ◽  
Author(s):  
Flavio F. M. Sabatti ◽  
Stephen M. Goodnick ◽  
Marco Saraniti

A Monte Carlo rejection technique for numerically solving the complete, nonlinear phonon Boltzmann transport equation (BTE) is presented in this work, including three particles interactions. The technique has been developed to explicitly model population-dependent scattering within a full-band cellular Monte Carlo (CMC) framework, to simulate phonon transport in semiconductors, while ensuring conservation of energy and momentum for each scattering event within gridding error. The scattering algorithm directly solves the many-body problem accounting for the instantaneous distribution of the phonons. Our general approach is capable of simulating any nonequilibrium phase space distribution of phonons using the full phonon dispersion without the need of approximations used in previous Monte Carlo simulations. In particular, no assumptions are made on the dominant modes responsible for anharmonic decay, while normal and umklapp scattering are treated on the same footing. In this work, we discuss details of the algorithmic implementation of both the three-particle scattering for the treatment of the anharmonic interactions between phonons, as well as treating isotope and impurity scattering within the same framework. The simulation code was validated by comparison with both analytical and experimental results; in particular, the simulation results show close agreement with a wide range of experimental data such as thermal conductivity as function of the isotopic composition, the temperature, and the thin-film thickness.


2011 ◽  
Vol 20 (03) ◽  
pp. 423-430
Author(s):  
DIEGO GUERRA ◽  
FABIO ALESSIO MARINO ◽  
STEPHEN GOODNICK ◽  
DAVID FERRY ◽  
MARCO SARANITI

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as Cg, Cgd, and Cgs, were directly and indirectly extracted combining small-signal analysis and DC characterization.


2010 ◽  
Vol 57 (12) ◽  
pp. 3348-3354 ◽  
Author(s):  
Diego Guerra ◽  
Marco Saraniti ◽  
Nicolas Faralli ◽  
David K. Ferry ◽  
Stephen M. Goodnick ◽  
...  

2010 ◽  
Vol 57 (10) ◽  
pp. 2579-2586 ◽  
Author(s):  
Fabio Alessio Marino ◽  
Marco Saraniti ◽  
Nicolas Faralli ◽  
David K. Ferry ◽  
Stephen M. Goodnick ◽  
...  

2010 ◽  
Vol 7 (10) ◽  
pp. 2445-2449
Author(s):  
Fabio Alessio Marino ◽  
Diego Guerra ◽  
Stephen Goodnick ◽  
David Ferry ◽  
Marco Saraniti

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