Passivation study of the amorphous-crystalline silicon interface formed using DC saddle-field glow discharge

2010 ◽  
Vol 207 (3) ◽  
pp. 539-543 ◽  
Author(s):  
Barzin Bahardoust ◽  
Alongkarn Chutinan ◽  
Keith Leong ◽  
Adel B. Gougam ◽  
Davit Yeghikyan ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Crystalline Silicon ◽  
Dc Saddle Field ◽  
Silicon Interface

Amorphous-crystalline silicon interface prepared using DC saddle-field pecvd

2009 ◽  
Author(s):  
Barzin Bahardoust ◽  
Alongkarn Chutinan ◽  
Thomas Blaine ◽  
Adel B. Gougam ◽  
Keith Leong ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Dc Saddle Field ◽  
Silicon Interface

Improved passivation effect at the amorphous/crystalline silicon interface due to ultrathin SiOx layers pre-formed in chemical solutions

2014 ◽  
Vol 7 (6) ◽  
pp. 065504 ◽  
Author(s):  
Jieyu Bian ◽  
Liping Zhang ◽  
Wanwu Guo ◽  
Dongliang Wang ◽  
Fanying Meng ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Chemical Solutions ◽  
Silicon Interface

scholarly journals Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

2011 ◽  
Vol 99 (12) ◽  
pp. 123506 ◽  
Author(s):  
A. Descoeudres ◽  
L. Barraud ◽  
Stefaan De Wolf ◽  
B. Strahm ◽  
D. Lachenal ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Interface Passivation ◽  
Silicon Interface

Saddle-Field Glow-Discharge Deposition of Amorphous Semiconductors

1996 ◽  
Vol 420 ◽  
Author(s):  
F. Gaspari ◽  
L. S. Sidhu ◽  
S. K. O'leary ◽  
S. Zukotynski
Keyword(s):  
Growth Rate ◽  
Glow Discharge ◽  
Significant Role ◽  
Mass Spectra ◽  
Film Surface ◽  
Amorphous Semiconductors ◽  
Glow Discharges ◽  
Rf Glow Discharge ◽  
Dc Saddle Field ◽  
Glow Discharge Deposition

AbstractWe present a dc saddle-field glow-discharge deposition procedure which combines the positive attributes of the conventional dc and rf glow-discharge techniques. Preliminary mass spectra analyses of both silane and methane glow-discharges demonstrates that ions constitute a significant fraction of the species reaching the film surface. Growth rate analyses suggest that ions play a significant role in the saddle-field glow-discharge deposition of amorphous semiconducting films.

Raman scattering studies of ion beam induced mixing at the amorphous germanium/crystalline silicon interface

1987 ◽  
Vol 51 (24) ◽  
pp. 2019-2021 ◽  
Author(s):  
S. T. Kshirsagar ◽  
S. V. Rajarshi ◽  
R. O. Dusane ◽  
Jayashri Vaidya ◽  
V. G. Bhide
Keyword(s):  
Raman Scattering ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Amorphous Germanium ◽  
Silicon Interface

Electrical and Optical Properties of Amorphous and Microcrystalline Hydrogenated Silicon Films Deposited Using Saddle Field Glow Discharge

2003 ◽  
Vol 762 ◽  
Author(s):  
I. Milostnaya ◽  
T. Allen ◽  
F. Gaspari ◽  
N.P. Kherani ◽  
D. Yeghikyan ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Raman Spectroscopy ◽  
Optical Properties ◽  
Glow Discharge ◽  
Silicon Films ◽  
Electrical And Optical Properties ◽  
Hydrogenated Silicon ◽  
Sem And Tem ◽  
Vis Spectroscopy ◽  
Dc Saddle Field

AbstractAmorphous (a-Si:H) and microcrystalline (μc-Si:H) hydrogenated silicon films were obtained using DC saddle field glow discharge. The structure of the films was determined by Raman spectroscopy, SEM and TEM. The optoelectronic characteristics of both a-Si:H and μcSi:H were investigated using FTIR, UV/VIS spectroscopy, dark electrical conductivity (σd) and photoconductivity (σph) measurements. Boron and phosphorous doping of a-Si:H and μc-Si:H films was also investigated. The results show that both a-Si:H and μc-Si:H undoped films are highly resistive (σd=10-8-10-10 Ω-1cm-1). The doping efficiency of μc-Si:H films is much higher than a-Si:H films. The Tauc gap for a-Si:H was in the range 1.8-1.9 eV and for μc-Si:H films it was in the range 1.9-2.5 eV. The photoconductivity measurements of undoped films indicate a higher photosensitivity of a-Si:H films (σph/σd=104)than that of μc-Si:H films (σph/σd=10-100).

Substrate Temperature Dependence of the Structural Properties of Glow Discharge Produced a-Ge:H

1989 ◽  
Vol 149 ◽  
Author(s):  
Scott J. Jones ◽  
Susanne M. Lee ◽  
Warren A. Turner ◽  
William Paul
Keyword(s):  
Electron Microscopy ◽  
Glow Discharge ◽  
Crystalline Silicon ◽  
Aluminum Foil ◽  
Columnar Structure ◽  
Relative Increase ◽  
Scanning Calorimetry ◽  
Crystallization Peak ◽  
Transmission Electron ◽  
Carbon Coated

ABSTRACTA series of glow discharge a-Ge:H films has been produced at substrate temperatures, Ts, between 100 and 350°C. The films were structurally characterized using Differential Scanning Calorimetry (DSC), Gas Evolution (GE), Transmission Electron Microscopy (TEM) and Scanning Electron Microscopy (SEM). The DSC and GE results are substrate dependent. Two exothermic peaks are seen in DSC spectra for films deposited on aluminum foil while only one peak, identified by Raman measurements as the crystallization peak, is seen for samples deposited on beryllium, NaCl, carbon coated mica, crystalline silicon and 7059 glass. The crystallization peak temperature of films deposited on 7059 glass decreases with increasing Ts until 250°C where it then remains constant up to Ts=350°C. GE results show a relative increase of high temperature evolution with an increase in Ts. A well defined island/tissue structure seen in TEM micrographs of low Ts films disappears at higher Ts values. SEM measurements show columnar structure present only in films produced at Ts≤250°C. All the structural measurements point to a more stable material of higher density for Ts>250°C.

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