dc saddle field
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2012 ◽  
Vol 358 (17) ◽  
pp. 2227-2231 ◽  
Author(s):  
B. Halliop ◽  
M.F. Salaun ◽  
W. Favre ◽  
R. Varache ◽  
M.E. Gueunier-Farret ◽  
...  

2011 ◽  
Vol 1321 ◽  
Author(s):  
Keith R. Leong ◽  
Nazir P. Kherani ◽  
Stefan Zukotynski

ABSTRACTA new plasma deposition system was built with the capability of varying the electrode spacing in the DC Saddle Field plasma enhanced chemical vapor deposition system. An ion mass spectrometer was installed just below the substrate holder to sample the ion species travelling towards the substrate. Silane plasma and amorphous silicon film studies were conducted to shed light on the impinging ion species, ion energy distributions, and film properties with varying electrode spacing. The results indicate that decreasing the distance between the substrate and cathode leads to a reduction in the high energy ion bombardment.


2010 ◽  
Vol 207 (3) ◽  
pp. 539-543 ◽  
Author(s):  
Barzin Bahardoust ◽  
Alongkarn Chutinan ◽  
Keith Leong ◽  
Adel B. Gougam ◽  
Davit Yeghikyan ◽  
...  

Author(s):  
Barzin Bahardoust ◽  
Alongkarn Chutinan ◽  
Thomas Blaine ◽  
Adel B. Gougam ◽  
Keith Leong ◽  
...  

2006 ◽  
Vol 910 ◽  
Author(s):  
Keith R Leong ◽  
Andreas Mandelis ◽  
Nazir P Kherani ◽  
Stefan Zukotynski

AbstractIntrinsic hydrogenated amorphous silicon films were deposited by the DC saddle field system on crystalline silicon wafers. The substrate temperature of the amorphous film, crystalline silicon surface cleaning schemes, and the native oxide etchant were varied. The transport parameters of the amorphous-crystalline silicon heterostructures were evaluated by Photocarrier Radiometric (PCR) lifetime measurements. PCR bulk lifetime estimates were obtained using the quinhydrone in methanol solution to passivate the crystalline silicon surface. We present the effectiveness of the PCR system in evaluating different surface passivation schemes.


2005 ◽  
Vol 483-485 ◽  
pp. 769-772
Author(s):  
G. Sarov ◽  
T. Cholakova ◽  
Roumen Kakanakov

This paper presents much more details on the process of etching n and p type SiC using a dc saddle field source. Here is described a method for stabilizing the dc discharge by adding controlled flow of O2 to SF6 in the source chamber. This kind of etching is used to fabricate 4H-SiC p-i-n diodes with a junction periphery protection. The effect of the junction periphery protection, the source power that terminates the etching process and testing environment on the breakdown voltage are investigated. The optimised p-i-n diodes exhibit a stable reverse bias operation with a breakdown voltage of 1700 V.


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