Raman scattering studies of ion beam induced mixing at the amorphous germanium/crystalline silicon interface

1987 ◽  
Vol 51 (24) ◽  
pp. 2019-2021 ◽  
Author(s):  
S. T. Kshirsagar ◽  
S. V. Rajarshi ◽  
R. O. Dusane ◽  
Jayashri Vaidya ◽  
V. G. Bhide
Keyword(s):  
Raman Scattering ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Amorphous Germanium ◽  
Silicon Interface

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Electron-Selective Epitaxial/Amorphous Germanium Stack Contact for Organic-Crystalline Silicon Hybrid Solar Cells

2018 ◽  
Vol 1 (9) ◽  
pp. 4899-4905
Author(s):  
Bingbing Chen ◽  
Jianhui Chen ◽  
Kunpeng Ge ◽  
Linlin Yang ◽  
Yanjiao Shen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Hybrid Solar Cells ◽  
Amorphous Germanium

MeV Self Ion Beam Induced Amorphisation of Silicon Carbide Surfaces and Its Effect on Their Trdbomechanical Propertdzs

1991 ◽  
Vol 235 ◽  
Author(s):  
D. K. Sood ◽  
V. C. Nath ◽  
Yang Xi
Keyword(s):  
Silicon Carbide ◽  
Raman Scattering ◽  
High Precision ◽  
Friction And Wear ◽  
Ion Beam ◽  
Steel Ball ◽  
Carbon Ions ◽  
Ion Energy ◽  
Number Of Cycles ◽  
Tribomechanical Properties

ABSTRACTAmorphisation of sintered SiC by bombardment with self (C, Si) ions has been studied. Ion doses ranged from 1×1015 to 1×1017 ions/cm2; and ion energy was varied from 0.09 to 5 MeV. Amorphisation was detected by micro-focus Raman scattering. Tribomechanical properties-friction and wear were studied with a high precision pin (steel ball) and disc (implanted) machine. Results show substantial improvements in friction and wear, which persist to a large number of cycles. Tribomechanical properties are shown to correlate with surface amorphisation and carburisation. Carbon ions are found to be much more effective than Si ions (with similar damage distributions) in reducing friction and wear.

Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance

1997 ◽  
Vol 153-155 ◽  
pp. 137-158 ◽  
Author(s):  
Emanuele Rimini ◽  
Salvatore Coffa ◽  
Sebania Libertino ◽  
G. Mannino ◽  
F. Priolo ◽  
...  
Keyword(s):  
Point Defects ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Basic Research ◽  
And Migration

Ion beam induced defects in crystalline silicon

2004 ◽  
Vol 216 ◽  
pp. 46-56 ◽  
Author(s):  
F Cristiano ◽  
N Cherkashin ◽  
X Hebras ◽  
P Calvo ◽  
Y Lamrani ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Ion Beam ◽  
Induced Defects

scholarly journals An Experiment-Based Profile Function for the Calculation of Damage Distribution in Bulk Silicon Induced by a Helium Focused Ion Beam Process

Sensors ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 2306 ◽  
Author(s):  
Qianhuang Chen ◽  
Tianyang Shao ◽  
Yan Xing
Keyword(s):  
Beam Energy ◽  
Focused Ion Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Single Crystalline Silicon ◽  
Nanostructure Fabrication ◽  
Profile Function ◽  
Single Crystalline ◽  
Prediction Function ◽  
Wide Range

The helium focused ion beam (He-FIB) is widely used in the field of nanostructure fabrication due to its high resolution. Complicated forms of processing damage induced by He-FIB can be observed in substrates, and these damages have a severe impact on nanostructure processing. This study experimentally investigated the influence of the beam energy and ion dose of He-FIB on processing damage. Based on the experimental results, a prediction function for the amorphous damage profile of the single-crystalline silicon substrate caused by incident He-FIB was proposed, and a method for calculating the amorphous damage profile by inputting ion dose and beam energy was established. Based on one set of the amorphous damage profiles, the function coefficients were determined using a genetic algorithm. Experiments on single-crystalline silicon scanned by He-FIB under different process parameters were carried out to validate the model. The proposed experiment-based model can accurately predict the amorphous damage profile induced by He-FIB under a wide range of different ion doses and beam energies.

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