Saddle-Field Glow-Discharge Deposition of Amorphous Semiconductors

1996 ◽  
Vol 420 ◽  
Author(s):  
F. Gaspari ◽  
L. S. Sidhu ◽  
S. K. O'leary ◽  
S. Zukotynski
Keyword(s):  
Growth Rate ◽  
Glow Discharge ◽  
Significant Role ◽  
Mass Spectra ◽  
Film Surface ◽  
Amorphous Semiconductors ◽  
Glow Discharges ◽  
Rf Glow Discharge ◽  
Dc Saddle Field ◽  
Glow Discharge Deposition

AbstractWe present a dc saddle-field glow-discharge deposition procedure which combines the positive attributes of the conventional dc and rf glow-discharge techniques. Preliminary mass spectra analyses of both silane and methane glow-discharges demonstrates that ions constitute a significant fraction of the species reaching the film surface. Growth rate analyses suggest that ions play a significant role in the saddle-field glow-discharge deposition of amorphous semiconducting films.

Electron and chemical kinetics in methane rf glow‐discharge deposition plasmas

1989 ◽  
Vol 65 (1) ◽  
pp. 70-78 ◽  
Author(s):  
Laurence E. Kline ◽  
William D. Partlow ◽  
William E. Bies
Keyword(s):  
Glow Discharge ◽  
Chemical Kinetics ◽  
Rf Glow Discharge ◽  
Glow Discharge Deposition

Microanalysis of amorphous semiconductor films

1978 ◽  
Vol 36 (1) ◽  
pp. 534-535 ◽  
Author(s):  
B. Schröder ◽  
J. Geiger ◽  
H.W. Müller
Keyword(s):  
Glow Discharge ◽  
Energy Loss ◽  
Amorphous Silicon ◽  
Amorphous Semiconductor ◽  
Amorphous Semiconductors ◽  
Silicon Films ◽  
Semiconductor Films ◽  
Analytical Test ◽  
Infrared Spectral ◽  
Rf Glow Discharge

In a previous paper /l/ it has been pointed out that electron energy loss spectroscopy in the infrared spectral region is a very sensitive tool for the study of structure and composition of thin films. Here as a further example the energy loss study of amorphous silicon films is presented. In the case of amorphous semiconductors where most of the optical and electrical properties are still strongly influenced by impurities an analytical test is substantial.Silicon films have been investigated which have been prepared by different methods and under different conditions: by evaporation, by decomposition of silane (SiH4) in a rf glow discharge and by sputtering. The influence of the substrate temperature has been studied for films produced by silane decomposition.Fig. 1 shows a typical spectrum of amorphous silicon prepared by the glow discharge method obtained by 30 keV electrons with a resolution of 3 to 4 meV.

Preparation and characterization of epitaxial iron oxide films

1998 ◽  
Vol 13 (7) ◽  
pp. 2003-2014 ◽  
Author(s):  
Y. Gao ◽  
Y. J. Kim ◽  
S. A. Chambers
Keyword(s):  
Growth Rate ◽  
Iron Oxide ◽  
Oxygen Plasma ◽  
Film Surface ◽  
Surface Region ◽  
Growth Conditions ◽  
Epitaxial Films ◽  
Pure Phase ◽  
Iron Oxide Films

Well-ordered, pure-phase epitaxial films of FeO, Fe3O4, and γ–Fe2O3 were prepared on MgO(001) by oxygen-plasma-assisted MBE. The stoichiometries of these thin films were controlled by varying the growth rate and oxygen partial pressure. Selective growth of γ–Fe2O3 and α–Fe2O3 was achieved by controlling the growth conditions in conjunction with the choice of appropriate substrates. Growth of the iron oxide epitaxial films on MgO at ≥350 °C is accompanied by significant Mg outdiffusion. The FeO(001) film surface exhibits a (2 × 2) reconstruction, which is accompanied by a significant amount of Fe3+ in the surface region. Fe3O4 (001) has been found to reconstruct to a structure. γ–Fe23 (001) film surface is unreconstructed.

Current-voltage characteristics of aluminium nitride films formed by RF glow discharge

1980 ◽  
Vol 13 (6) ◽  
pp. L101-L105 ◽  
Author(s):  
D Mangalaraj ◽  
M Radhakrishnan ◽  
C Balasubramanian ◽  
A R Kasilingam
Keyword(s):  
Glow Discharge ◽  
Aluminium Nitride ◽  
Current Voltage ◽  
Rf Glow Discharge ◽  
Current Voltage Characteristics

Microcrystalline Silicon Films Deposited by Cathode‐Type RF Glow Discharge Technique

1995 ◽  
Vol 142 (5) ◽  
pp. 1663-1666 ◽  
Author(s):  
Ahalapitiya Hewage Jayatissa ◽  
Yoichiro Nakanishi ◽  
Yosinori Hatanaka
Keyword(s):  
Glow Discharge ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Rf Glow Discharge

Quantitative Studies of Glow-Discharge Deposition Using Optical Emission Spectroscopy

1984 ◽  
Vol 38 ◽  
Author(s):  
F. J. Kampas
Keyword(s):  
Electrical Properties ◽  
Glow Discharge ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Secondary Electrons ◽  
Rf Discharges ◽  
Quantitative Studies ◽  
Glow Discharge Deposition

AbstractIntensities of CH optical emission and electrical properties of methane rf discharges as a function of pressure are presented and discussed. The results are consistent with a model in which the properties of the discharge are dominated by secondary electrons traversing the gap between the electrodes.

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