Substrate Temperature Dependence of the Structural Properties of Glow Discharge Produced a-Ge:H

1989 ◽  
Vol 149 ◽  
Author(s):  
Scott J. Jones ◽  
Susanne M. Lee ◽  
Warren A. Turner ◽  
William Paul

ABSTRACTA series of glow discharge a-Ge:H films has been produced at substrate temperatures, Ts, between 100 and 350°C. The films were structurally characterized using Differential Scanning Calorimetry (DSC), Gas Evolution (GE), Transmission Electron Microscopy (TEM) and Scanning Electron Microscopy (SEM). The DSC and GE results are substrate dependent. Two exothermic peaks are seen in DSC spectra for films deposited on aluminum foil while only one peak, identified by Raman measurements as the crystallization peak, is seen for samples deposited on beryllium, NaCl, carbon coated mica, crystalline silicon and 7059 glass. The crystallization peak temperature of films deposited on 7059 glass decreases with increasing Ts until 250°C where it then remains constant up to Ts=350°C. GE results show a relative increase of high temperature evolution with an increase in Ts. A well defined island/tissue structure seen in TEM micrographs of low Ts films disappears at higher Ts values. SEM measurements show columnar structure present only in films produced at Ts≤250°C. All the structural measurements point to a more stable material of higher density for Ts>250°C.

Author(s):  
O. L. Shaffer ◽  
M.S. El-Aasser ◽  
C. L. Zhao ◽  
M. A. Winnik ◽  
R. R. Shivers

Transmission electron microscopy is an important approach to the characterization of the morphology of multiphase latices. Various sample preparation techniques have been applied to multiphase latices such as OsO4, RuO4 and CsOH stains to distinguish the polymer phases or domains. Radiation damage by an electron beam of latices imbedded in ice has also been used as a technique to study particle morphology. Further studies have been developed in the use of freeze-fracture and the effect of differential radiation damage at liquid nitrogen temperatures of the latex particles embedded in ice and not embedded.Two different series of two-stage latices were prepared with (1) a poly(methyl methacrylate) (PMMA) seed and poly(styrene) (PS) second stage; (2) a PS seed and PMMA second stage. Both series have varying amounts of second-stage monomer which was added to the seed latex semicontinuously. A drop of diluted latex was placed on a 200-mesh Formvar-carbon coated copper grid.


Polymers ◽  
2021 ◽  
Vol 13 (9) ◽  
pp. 1426
Author(s):  
Tomáš Remiš ◽  
Petr Bělský ◽  
Tomáš Kovářík ◽  
Jaroslav Kadlec ◽  
Mina Ghafouri Azar ◽  
...  

In this work, advanced polymer nanocomposites comprising of polyvinyl alcohol (PVA) and nanodiamonds (NDs) were developed using a single-step solution-casting method. The properties of the prepared PVA/NDs nanocomposites were investigated using Raman spectroscopy, small- and wide-angle X-ray scattering (SAXS/WAXS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), and dynamic mechanical analysis (DMA). It was revealed that the tensile strength improved dramatically with increasing ND content in the PVA matrix, suggesting a strong interaction between the NDs and the PVA. SEM, TEM, and SAXS showed that NDs were present in the form of agglomerates with an average size of ~60 nm with primary particles of diameter ~5 nm. These results showed that NDs could act as a good nanofiller for PVA in terms of improving its stability and mechanical properties.


1990 ◽  
Vol 202 ◽  
Author(s):  
J. A. Barnard ◽  
E. Haftek ◽  
A. Waknis ◽  
M. Tan

ABSTRACTThe growth and microstructural evolution of Al/Ni and Ni/AI bilayer thin films have been investigated as a function of Al and Ni layer thickness and thermal treatment by transmission electron microscopy. Studies were also made of Al and Ni single layers of varying thickness. All films were grown by dc magnetron sputtering using carbon coated Cu TEM grids as substrates. For the bilayers, the Al thickness was fixed at either 3.5 or 7.0 nm while the Ni thickness was varied systematically from 3.2 to 12.8 nm. Deposition sequence significantly influenced bilayer microstructure even in as-deposited samples. Al/Ni bilayers generally exhibited a finer microstructure than Ni/AI. In the 3.5 nm Al/Ni bilayers no conclusive electron diffraction evidence was found for elemental Al while for the reverse sequence both Al and NiAl3 diffraction rings were found. In the 7.0 nm Al/Ni bilayers diffraction rings due to Al were observed. The reverse sequence again produced both Al and NiAl3 diffraction rings. Interestingly, diffraction rings due to the Ni layers were found for all samples but were consistently measured at positions corresponding to a 2.5–3.5% increase in interplanar spacing. Annealing at 385°C produced evidence for generalized grain growth and strong accentuation of the electron diffraction rings due to the NiAl3 phase. Again, deposition significantly influenced annealed bilayer microstructure. For the Al/Ni sequence annealing produced polycrystalline N1AI3 island-like structures, while for Ni/AI bilayers, annealing promoted the growth of small NiAl3 crystals uniformly distributed in the film.


1986 ◽  
Vol 64 (10) ◽  
pp. 1369-1373 ◽  
Author(s):  
U. von Sacken ◽  
D. E. Brodie

The structure of polycrystalline Zn3P2 films has been studied for 1- to 2-μm-thick vacuum-deposited films on glass substrates. Transmission electron microscopy and X-ray diffraction techniques have been used to obtain a detailed, quantitative analysis of the film structure. The initial growth consists of small (≤ 10 nm), randomly oriented grains. As the film thickness increases, the growth of crystallites with the {220} planes oriented approximately parallel to the substrate is favoured, and a columnar structure develops along with a highly preferred orientation. This structure has been observed directly by transmission electron microscopy of thin cross sections of the films. The size of the grains at the free surface increases with the film thickness, reaching approximately 200–300 nm when the film is 1 μm thick. The effects of substrate temperature and low-energy (0.5–2 keV) electron bombardment of the film during growth have also been studied. Neither substrate temperature nor electron bombardment appear to have a major effect on the film structure. The primary effect of electron bombardment appears to be the creation of preferred nucleation sites on the substrate.


1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yamasaki ◽  
S. Takeda

AbstractThe structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550°C.


2005 ◽  
Vol 899 ◽  
Author(s):  
Yoosuf Picard ◽  
Steven M. Yalisove

AbstractPre-thinned foils composed of amorphous silicon and polycrystalline cobalt were irradiated using femtosecond pulse-length lasers at fluences sufficient for ablation (material removal). The resultant ablated hole and surrounding vicinity was studied using transmission electron microscopy to determine modifications to the structure. Evidence of cobalt silicide formation was observed within a 3 micron radius of the laser hole edge by use of selected area electron diffraction (SAED). In addition, elongated grains of crystalline silicon was observed within 500 nm of the laser hole edge, indicating melting of the amorphous silicon and heat dissipation slow enough to allow recyrstallization. This initial work demonstrates the use of pre-designed nanostructured multilayer systems as a method for nanoscale profiling of heat dissipation following pulsed laser irradiation.


Materials ◽  
2019 ◽  
Vol 12 (14) ◽  
pp. 2316
Author(s):  
Feijoo ◽  
Cabeza ◽  
Merino ◽  
Pena ◽  
Rey

Pre-alloyed micron-sized 6005A Al alloy (AA 6005A) powders, with a Mg/Si atomic ratio of 0.75, obtained by high pressure inert gas atomization were consolidated by uniaxial cold pressing at 200 MPa into cylindrical Al containers and hot extruded at 450, 480 and 500 °C with an extrusion rate of 7:1, followed by artificial T6 precipitation hardening. Ageing conditions were varied between 170 °C and 190 °C and times of 6, 7 and 8 hours. The microstructure of the extruded profiles was analysed using X-Ray diffractometry (XRD), light optical microscopy (LOM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Differential scanning calorimetry (DSC) was used to study the possible phase transformations. After our results, the peak-aging hardness condition was achieved at 180 °C for 6 h. Mechanical properties of the powder metallurgy (P/M) aluminium alloys consolidated by hot extrusion were superior to those of the extruded profiles of wrought alloy using conventional ingot metallurgy (I/M) billets. AA 6005A wrought P/M alloy via T6 heat treatment shown yield stress of 317 MPa and elongation of 21% at the extrusion pre-heating temperature of 500 °C.


Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 575 ◽  
Author(s):  
Xuwen Liu ◽  
Yan Hu ◽  
Hai Wei ◽  
Bingwen Chen ◽  
Yinghua Ye ◽  
...  

Since copper azide (Cu(N3)2) has high electrostatic sensitivity and is difficult to be practically applied, silicon-based Cu(N3)2@carbon nanotubes (CNTs) composite energetic films with higher electrostatic safety were fabricated, which can be compatible with micro-electro mechanical systems (MEMS). First, a silicon-based porous alumina film was prepared by a modified two-step anodic oxidation method. Next, CNTs were grown in pores of the silicon-based porous alumina film by chemical vapor deposition. Then, copper nanoparticles were deposited in CNTs by electrochemical deposition and oxidized to Cu(N3)2 by gaseous hydrogen azide. The morphology and composition of the prepared silicon-based Cu(N3)2@CNTs energetic films were characterized by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD), respectively. The electrostatic sensitivity of the composite energetic film was tested by the Bruceton method. The thermal decomposition kinetics of the composite energetic films were studied by differential scanning calorimetry (DSC). The results show that the exothermic peak of the silicon-based Cu(N3)2@CNTs composite energetic film is at the temperature of 210.95 °C, its electrostatic sensitivity is significantly less than that of Cu(N3)2 and its 50% ignition energy is about 4.0 mJ. The energetic film shows good electric explosion characteristics and is successfully ignited by laser.


2013 ◽  
Vol 19 (S2) ◽  
pp. 1546-1547
Author(s):  
D.H. Anjum ◽  
N. Memon ◽  
S.H. Chung

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.


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