Staebler–Wronski-like formation of defects at the amorphous-silicon–crystalline silicon interface during illumination

2008 ◽  
Vol 103 (9) ◽  
pp. 094506 ◽  
Author(s):  
Heiko Plagwitz ◽  
Barbara Terheiden ◽  
Rolf Brendel
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Silicon Interface

scholarly journals Recent Progress in Understanding the Properties of the Amorphous Silicon/Crystalline Silicon Interface

2019 ◽  
Vol 216 (13) ◽  
pp. 1800877 ◽  
Author(s):  
Jean‐Paul Kleider ◽  
José Alvarez ◽  
Rudolf Brüggemann ◽  
Marie‐Estelle Gueunier‐Farret
Keyword(s):  
Amorphous Silicon ◽  
Recent Progress ◽  
Crystalline Silicon ◽  
Silicon Interface

Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

2020 ◽  
Vol 65 (3) ◽  
pp. 236
Author(s):  
R. M. Rudenko ◽  
O. O. Voitsihovska ◽  
V. V. Voitovych ◽  
M. M. Kras’ko ◽  
A. G. Kolosyuk ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Nanocrystalline Silicon ◽  
Recrystallization Temperature ◽  
Nanocrystalline Phase ◽  
Silicon Phase ◽  
Silicon Nanocrystallites ◽  
Lower Temperature ◽  
Two Stages

The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

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