FIB tilting method for thin TEM lamella preparation

2015 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung ◽  
Chen Tung Hung
Keyword(s):  
Tem Lamella

Applying a Significant Protection Layer on Double Ex Situ Lift-out TEM Specimens to Protect Against Ion Beam Impact

2019 ◽  
Author(s):  
Chun-Hung Lin ◽  
Hsin-Cheng Hsu ◽  
Tsung-Yi Lin ◽  
Ru-Hui Lin ◽  
I-An Chen ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ex Situ ◽  
Preliminary Treatment ◽  
Significant Protection ◽  
Damage Layer ◽  
Protection Method ◽  
Protection Layer ◽  
Tem Lamella ◽  
Beam Damage

Abstract Protection layers on double ex situ lift-out TEM specimens were investigate in this paper and two protection layer approaches for double INLO or double EXLO were introduced. The improved protection methods greatly decreased the damage layer on the top surface from 90 nm to 5 nm (or lower) during FIB milling. According to the property of different sample and its preliminary treatment in the FIB, we have the satisfactory approaches to be applied. Using this improved protection method, we demonstrate the structures within the TEM lamella can be observed without ion beam damage/implantation during FIB

High-Throughput, Site-Specific Sample Prep of Ultra-Thin TEM Lamella for Process Metrology and Failure Analysis

2012 ◽  
Author(s):  
Roger Alvis ◽  
Jeff Blackwood ◽  
Sang-Hoon Lee ◽  
Matthew Bray
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Process Monitoring ◽  
High Throughput ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Memory Devices ◽  
Site Specific ◽  
Critical Dimensions ◽  
Tem Lamella

Abstract Semiconductor devices with critical dimensions less than 20nm are now being manufactured in volume. A challenge facing the failure analysis and process-monitoring community is two-fold. The first challenge of TEM sample prep of such small devices is that the basic need to end-point on a feature-of-interest pushes the imaging limit of the instrument being used to prepare the lamella. The second challenge posed by advanced devices is to prepare an artifact-free lamella from non-planar devices such as finFETs as well as from structures incorporating ‘non-traditional’ materials. These challenges are presently overcome in many advanced logic and memory devices in the focused ion beam-based TEM sample preparation processes by inverting the specimen prior to thinning to electron transparency. This paper reports a highthroughput method for the routine preparation of artifact-free TEM lamella of 20nm thickness, or less.

Precise Localization of 28 nm via Chain Resistive Defect Using EBAC and Nanoprobing

2012 ◽  
Author(s):  
P. Larré ◽  
H. Tupin ◽  
C. Charles ◽  
R.H. Newton ◽  
A. Reverdy
Keyword(s):  
Electron Beam ◽  
Failure Analysis ◽  
Test Structure ◽  
Precise Localization ◽  
Isolation Method ◽  
Accurate Detection ◽  
Conventional Methods ◽  
Technology Nodes ◽  
Tem Lamella

Abstract As technology nodes continue to shrink, resistive opens have become increasingly difficult to detect using conventional methods such as AVC and PVC. The failure isolation method, Electron Beam Absorbed Current (EBAC) Imaging has recently become the preferred method in failure analysis labs for fast and highly accurate detection of resistive opens and shorts on a number of structures. This paper presents a case study using a two nanoprobe EBAC technique on a 28nm node test structure. This technique pinpointed the fail and allowed direct TEM lamella.

Yield and Failure Analysis of FinFET Source to Drain Leakage in 12nm Technology

2020 ◽  
Author(s):  
Felix Beaudoin ◽  
Satish Kodali ◽  
Rohan Deshpande ◽  
Wayne Zhao ◽  
Edmund Banghart ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Fault Localization ◽  
Detailed Characterization ◽  
Laser Stimulation ◽  
Emission Microscopy ◽  
Scan Chain ◽  
Multiple Samples ◽  
Tem Lamella ◽  
Diffusion Activation

Abstract Fault localization using both dynamic laser stimulation and emission microscopy was used to localize the failing transistors within the failing scan chain latch on multiple samples. Nanoprobing was then performed and the source to drain leakage in N-type FinFETs was identified. After extensive detailed characterization, it was concluded that the N-type dopant signal was likely due to projections from the source/drain regions included in the TEM lamella. Datamining identified the scan chain fail to be occurring uniquely for a specific family of tools used during source/drain implant diffusion activation. This paper discusses the processes involved in yield delta datamining of FinFET and its advantages over failure characterization, fault localization, nanoprobing, and physical failure analysis.

Mitigating Curtaining Artifacts During Ga FIB TEM Lamella Preparation of a 14 nm FinFET Device

2017 ◽  
Vol 23 (3) ◽  
pp. 484-490 ◽  
Author(s):  
Andrey Denisyuk ◽  
Tomáš Hrnčíř ◽  
Jozef Vincenc Oboňa ◽  
Sharang ◽  
Martin Petrenec ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
State Of The Art ◽  
Incident Angle ◽  
Ion Beam ◽  
Preparation Technique ◽  
Metal Contacts ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Tem Lamella

AbstractWe report on the mitigation of curtaining artifacts during transmission electron microscopy (TEM) lamella preparation by means of a modified ion beam milling approach, which involves altering the incident angle of the Ga ions by rocking of the sample on a special stage. We applied this technique to TEM sample preparation of a state-of-the-art integrated circuit based on a 14-nm technology node. Site-specific lamellae with a thickness <15 nm were prepared by top-down Ga focused ion beam polishing through upper metal contacts. The lamellae were analyzed by means of high-resolution TEM, which showed a clear transistor structure and confirmed minimal curtaining artifacts. The results are compared with a standard inverted thinning preparation technique.

scholarly journals Study of Micro Structural Material Changes after WEDM Based on TEM Lamella Analysis

Metals ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 949 ◽  
Author(s):  
Katerina Mouralova ◽  
Radim Zahradnicek ◽  
Libor Benes ◽  
Tomas Prokes ◽  
Radim Hrdy ◽  
...  
Keyword(s):  
Electrical Discharge ◽  
Electrical Discharge Machining ◽  
Subsurface Layer ◽  
Base Material ◽  
Wire Electrical Discharge Machining ◽  
Transmission Electron ◽  
Machined Parts ◽  
Tem Lamella ◽  
Unconventional Machining

Wire electrical discharge machining is an unconventional machining technology that is crucial in many industries. The surface quality of the machined parts is carefully monitored, but the condition of the subsurface layer also plays a crucial role, especially in case of defects occurrence such as cracks or burnt cavities. The subsurface layer of individual materials is affected differently due to wire electrical discharge machining. For this reason, this study was carried out focusing on a detailed analysis of transmission electron microscope (TEM) lamella made of Ti-6Al-4V titanium alloy, AlZn6Mg2Cu aluminum alloy, pure molybdenum, Creusabro 4800 steel, and Hardox 400 steel. The attention was first of all paid to the concentration and distribution of individual elements in the recast layer and also in the base material, which was often affected by wire electrical discharge machining. Further, a diffraction analysis was performed for each TEM lamella in the adhesive area and in the base material area. In order to assess the macro-effects on the machined material, the topography analysis of the machined surfaces and the morphology analysis were performed using electron microscopy.

In-Situ Carbon Deposition in FIB for Reducing TEM Lamella Curtains Caused by Air Gaps in NAND Flash Memory

2017 ◽  
Author(s):  
Hsin-Cheng Hsu ◽  
Chun-Hung Lin ◽  
Huai-San Ku ◽  
Dun-Fan Zhuang ◽  
Ru-Hui Lin ◽  
...  
Keyword(s):  
Flash Memory ◽  
Carbon Deposition ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Air Gaps ◽  
Dual Beam ◽  
Controlled Deposition ◽  
Tem Lamella ◽  
Ideal Method

Abstract An in situ air gaps fill-in approach was investigated by conducting a convenient way in dual-beam FIB. We employed a well-controlled deposition to precisely fill carbon into air gaps. It greatly reduced formation of the artifacts and avoided the profiles of air gaps by reducing striations and damages during FIB milling. Generally, the effect of air gaps between wordlines or between metal lines, as well as some unexpected defect voids can be eliminated in most cases if this ideal method is applied.

High Volume and Fast Turnaround Automated Inline TEM Sample Preparation for Manufacturing Process Monitoring

2010 ◽  
Author(s):  
Hyoung H. Kang ◽  
John F. King ◽  
Oliver D. Patterson ◽  
Steven B. Herschbein ◽  
James P. Nadeau ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Process Monitoring ◽  
Preparation Method ◽  
High Volume ◽  
Ex Situ ◽  
Automation System ◽  
Sample Preparation Method ◽  
Factory Automation ◽  
Manufacturing Line ◽  
Tem Lamella

Abstract This paper introduces a high volume and fast turnaround TEM sample preparation method and requirements for a 300 mm inline DualBeam (FIB/SEM) system with “hands-off” full automation. It requires a factory automation system, robust automated recipes, and an ex-situ TEM lamella liftout system. It describes the recipe structure and TEM lamella lift out procedures. The focus is on fully automated TEM sample preparation for process monitoring in manufacturing line. Two successful examples are described to demonstrate the benefit of this method. The first one is TEM sample for CA profile at M1 level. The second is TEM sample for poly crystalline (PC) line profile at post-etch.

scholarly journals Artefact-free top-down TEM lamella preparation from a 14 nm technology IC

2016 ◽  
pp. 594-595
Author(s):  
Andrey Denisyuk ◽  
Tomáš Hrnčíř ◽  
Jozef Vincenc Oboňa ◽  
Martin Petrenec ◽  
Jan Michalička
Keyword(s):  
Top Down ◽  
Tem Lamella
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