Codiffusion of Phosphorus and Carbon in Preamorphized Ultrashallow Junctions

2012 ◽  
Vol 15 (6) ◽  
pp. H202 ◽  
Author(s):  
Y. T. Ling ◽  
M. J. Huang ◽  
R. D. Chang ◽  
L. Pelaz
Keyword(s):  
Ultrashallow Junctions

Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator

2006 ◽  
Vol 912 ◽  
Author(s):  
Justin J Hamilton ◽  
Erik JH Collart ◽  
Benjamin Colombeau ◽  
Massimo Bersani ◽  
Damiano Giubertoni ◽  
...  
Keyword(s):  
Structural Properties ◽  
Solid Phase ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
Bulk Silicon ◽  
Defect Band ◽  
Future Technology ◽  
Ultrashallow Junctions ◽  
P Type ◽  
Technology Nodes

AbstractFormation of highly activated, ultra-shallow and abrupt profiles is a key requirement for the next generations of CMOS devices, particularly for source-drain extensions. For p-type dopant implants (boron), a promising method of increasing junction abruptness is to use Ge preamorphizing implants prior to ultra-low energy B implantation and solid-phase epitaxy regrowth to re-crystallize the amorphous Si. However, for future technology nodes, new issues arise when bulk silicon is supplanted by silicon-on-insulator (SOI). Previous results have shown that the buried Si/SiO2 interface can improve dopant activation, but the effect depends on the detailed preamorphization conditions and further optimization is required. In this paper a range of B doses and Ge energies have been chosen in order to situate the end-of-range (EOR) defect band at various distances from the back interface of the active silicon film (the interface with the buried oxide), in order to explore and optimize further the effect of the interface on dopant behavior. Electrical and structural properties were measured by Hall Effect and SIMS techniques. The results show that the boron deactivates less in SOI material than in bulk silicon, and crucially, that the effect increases as the distance from the EOR defect band to the back interface is decreased. For the closest distances, an increase in junction steepness is also observed, even though the B is located close to the top surface, and thus far from the back interface. The position of the EOR defect band shows the strongest influence for lower B doses.

Formation of ultrashallow junctions less than 10nm with the combination of low energy B ion implantation and laser annealing

2006 ◽  
Author(s):  
Ryuta Yamada ◽  
Singo Seto ◽  
Sosi Sato ◽  
Yuki Tanaka ◽  
Satoru Matumoto ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Low Energy ◽  
Ultrashallow Junctions

Role of silicon surface in the removal of point defects in ultrashallow junctions

1996 ◽  
Vol 69 (15) ◽  
pp. 2228-2230 ◽  
Author(s):  
A. Sultan ◽  
S. Banerjee ◽  
S. List ◽  
M. Rodder
Keyword(s):  
Point Defects ◽  
Silicon Surface ◽  
Ultrashallow Junctions

Electrical Characterization of Residual Implantation-Induced Defects in the Vicinity of Laser-Annealed Implanted Ultrashallow Junctions

2006 ◽  
Vol 912 ◽  
Author(s):  
V. Gonda ◽  
S. Liu ◽  
T.L.M. Scholtes ◽  
L.K. Nanver
Keyword(s):  
Sheet Resistance ◽  
Laser Annealing ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Excimer Laser Annealing ◽  
Ultrashallow Junctions ◽  
Residual Damage ◽  
Doping Profiles ◽  
Induced Defects

AbstractUltrashallow junctions (USJ) were created by tilted 5 keV As+ implantation to a dose of 3x1015 cm−2 followed by excimer laser annealing (ELA). Sheet resistance and capacitances were measured in the background layer below the USJ. Results showed that sheet resistance was dependent on the laser energies in the close vicinity of these diodes. Doping profiles extracted from the capacitances indicated electrical deactivation here caused by the residual implantation defects. The extent and location of the residual damage is shown to be strongly dependent on the implantation dose and tilt angles, and also influenced by the laser annealing.

Ultrashallow junctions in Si using decaborane? A molecular dynamics simulation study

1998 ◽  
Vol 83 (6) ◽  
pp. 3148-3152 ◽  
Author(s):  
Roger Smith ◽  
Marcus Shaw ◽  
Roger P. Webb ◽  
Majeed A. Foad
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Simulation Study ◽  
Dynamics Simulation ◽  
Ultrashallow Junctions
Sign in / Sign up

Export Citation Format

Share Document