Subnanometer-resolution depth profiling of boron atoms and lattice defects in silicon ultrashallow junctions by ion beam techniques

2013 ◽  
Vol 31 (3) ◽  
pp. 031403 ◽  
Author(s):  
Lakshmanan H. Vanamurthy ◽  
Mengbing Huang ◽  
Hassaram Bakhru ◽  
Toshiharu Furukawa ◽  
Nathaniel Berliner ◽  
...  
Keyword(s):  
Ion Beam ◽  
Depth Profiling ◽  
Lattice Defects ◽  
Ultrashallow Junctions

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

The effect of orientation on ion beam erosion rates in ionic crystals measured by SIMS depth profiling

1991 ◽  
Vol 17 (3) ◽  
pp. 158-164 ◽  
Author(s):  
A. M. C. Kilner ◽  
J. A. Kilner ◽  
J. C. Elliott ◽  
G. Cressey ◽  
S. D. Littlewood
Keyword(s):  
Ion Beam ◽  
Depth Profiling ◽  
Ionic Crystals ◽  
Erosion Rates ◽  
Sims Depth Profiling

Investigation of Ge, As, and Au Diffusion in Non-Alloyed Epitaxial Au-Ge Ohmic Contacts to n-GaAs Using Secondary Ion Mass Spectroscopy Backside Sputter Depth-Profiling

1991 ◽  
Vol 240 ◽  
Author(s):  
H. S. LEE ◽  
R. T. Lareau ◽  
S. N. Schauer ◽  
R. P. Moerkirk ◽  
K. A. Jones ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
High Concentration ◽  
Ohmic Behavior ◽  
Preferential Sputtering ◽  
Specific Contact ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTA SIMS backside sputter depth-profile technique using marker layers is employed to characterize the diffusion profiles of the Ge, As, and Au in the Au-Ge contacts after annealing at 320 C for various times. This technique overcomes difficulties such as ion beam mixing and preferential sputtering and results in high depth resolution measurements since diffusion profiles are measured from low to high concentration. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by SIMS imaging and Auger depth profiling. Backside SIMS profiles indicate both Ge and Au diffusion into the GaAs substrate in the isalnd regions. Ohmic behavior was obtained after a 3 hour anneal with a the lowest average specific contact resistivity found to be ∼ 7 × 100−6 Ω- cm2.

scholarly journals Ion Beam Analysis for the Investigation of Diffusion Processes

2020 ◽  
Vol 13 ◽  
pp. 51
Author(s):  
H.-W. Becker
Keyword(s):  
Diffusion Processes ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Diffusion Studies ◽  
New Applications ◽  
Diffusion Of Hydrogen ◽  
High Depth

The unique advantages of ion beam analysis, such as the depth resolved unam- biguous stoichometric information of RBS or the possibility to detect hydrogen with high depth resolution still opens new applications in fundamental as well as applied science. Two examples are presented here.The diffusion of hydrogen in cement during the formation of cement has been studied with the 15N hydrogen depth profiling. It could be shown, that the known stages of the hydration process are correlated with the diffusion of hydrogen on a nanometer scale.Diffusion processes play also an important role in geology. The investigation of such processes with RBS will be presented. Prospects of diffusion studies using isotopie tracing with low lying resonances will be discussed.

scholarly journals Time-Of-Flight ERDA for Depth Profiling of Light Elements

2020 ◽  
Vol 4 (4) ◽  
pp. 40
Author(s):  
Keisuke Yasuda
Keyword(s):  
Ion Beam ◽  
Time Of Flight ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Semiconductor Detectors ◽  
Light Elements ◽  
Elastic Recoil ◽  
Measurement Sensitivity ◽  
Elastic Recoil Detection ◽  
Detection Analysis

The time-of-flight elastic recoil detection analysis (TOF-ERDA) method is one of the ion beam analysis methods that is capable of analyzing light elements in a sample with excellent depth resolution. In this method, simultaneous measurements of recoil ion energy and time of flight are performed, and ion mass is evaluated. The energy of recoil ions is calculated from TOF, which gives better energy resolution than conventional Silicon semiconductor detectors (SSDs). TOF-ERDA is expected to be particularly applicable for the analysis of light elements in thin films. In this review, the principle of TOF-ERDA measurement and details of the measurement equipment along with the performance of the instrumentation, including depth resolution and measurement sensitivity, are described. Examples of TOF-ERDA analysis are presented with a focus on the results obtained from the measurement system developed by the author.

Depth profiling of the C/Si interface

1993 ◽  
Vol 71 (11-12) ◽  
pp. 578-581
Author(s):  
D. M. Danailov ◽  
V. Miteva ◽  
U. Littmark
Keyword(s):  
Monte Carlo ◽  
Ion Beam ◽  
Depth Profiling ◽  
Computer Code ◽  
Carbon Films ◽  
Silicon Substrates ◽  
Thin Carbon ◽  
Beam Stability ◽  
Different Temperatures ◽  
Primary Ions

Auger profiles analysis is performed on thin carbon films deposited on silicon substrates (a-C:D/Si) using a 5 keV Xe+-ion beam. Stability of the interface is observed after annealing at different temperatures. The profiling is modeled by means of a Monte-Carlo dynamic computer code. A comparison is made of the mixing of the layers for profiling with different primary ions: the heavy Xe+ and the commonly-used Ar+.

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