scholarly journals Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions

2010 ◽  
Vol 107 (12) ◽  
pp. 123711 ◽  
Author(s):  
Fabrice Severac ◽  
Fuccio Cristiano ◽  
Elena Bedel-Pereira ◽  
Pier Francesco Fazzini ◽  
Jonathan Boucher ◽  
...  
Keyword(s):  
Hole Mobility ◽  
High Dose ◽  
Mobility Degradation ◽  
Ultrashallow Junctions

Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions

2009 ◽  
Vol 105 (4) ◽  
pp. 043711 ◽  
Author(s):  
Fabrice Severac ◽  
Fuccio Cristiano ◽  
Elena Bedel-Pereira ◽  
Pier Francesco Fazzini ◽  
Wilfried Lerch ◽  
...  
Keyword(s):  
High Dose ◽  
Ultrashallow Junctions ◽  
Scattering Factor

Suppression of Nitridation-Induced Interface Traps and Hole Mobility Degradation by Nitrogen Plasma Nitridation

2002 ◽  
Vol 5 (4) ◽  
pp. G26 ◽  
Author(s):  
C. H. Ang ◽  
S. S. Tan ◽  
C. M. Lek ◽  
W. Lin ◽  
Z. J. Zheng ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Nitrogen Plasma ◽  
Interface Traps ◽  
Plasma Nitridation ◽  
Mobility Degradation

Quantifying hole mobility degradation in pMOSFETs with a strained-Si0.7Ge0.3 surface-channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack

2004 ◽  
Vol 48 (5) ◽  
pp. 721-729 ◽  
Author(s):  
S. Persson ◽  
D. Wu ◽  
P.-E. Hellström ◽  
S.-L. Zhang ◽  
M. Östling
Keyword(s):  
Hole Mobility ◽  
Gate Stack ◽  
Mobility Degradation

Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate

2001 ◽  
Vol 40 (Part 1, No. 4A) ◽  
pp. 2506-2507
Author(s):  
Jeonghee Cho ◽  
Seunghee Han ◽  
Yeonhee Lee ◽  
Ok Kyung Kim ◽  
Gon-Ho Kim ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
Plasma Source ◽  
High Dose Rate ◽  
Low Energy ◽  
High Dose ◽  
Ultrashallow Junctions ◽  
Plasma Source Ion Implantation

Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films

2007 ◽  
Vol 102 (10) ◽  
pp. 104505 ◽  
Author(s):  
C. Dupré ◽  
T. Ernst ◽  
J.-M. Hartmann ◽  
F. Andrieu ◽  
J.-P. Barnes ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Silicon On Insulator ◽  
Strained Silicon ◽  
High Dose ◽  
Mobility Degradation ◽  
High Dose Implantation

Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs

2019 ◽  
Vol 34 (7) ◽  
pp. 075009
Author(s):  
Kai Han ◽  
Xiaolei Wang ◽  
Jinjuan Xiang ◽  
Lixing Zhou ◽  
Jiazhen Zhang ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Coulomb Scattering ◽  
Mobility Degradation

Electron Beam Damage of Biomolecules Assessed by Energy Loss Spectroscopy

1978 ◽  
Vol 36 (3) ◽  
pp. 61-69
Author(s):  
M. Isaacson ◽  
M.L. Collins ◽  
M. Listvan
Keyword(s):  
Electron Microscopy ◽  
Radiation Damage ◽  
Structural Integrity ◽  
Analytical Electron Microscopy ◽  
High Dose ◽  
Dose Rates ◽  
Special Cases ◽  
Analytical Electron ◽  
Atom Migration ◽  
Beam Damage

Over the past five years it has become evident that radiation damage provides the fundamental limit to the study of blomolecular structure by electron microscopy. In some special cases structural determinations at very low doses can be achieved through superposition techniques to study periodic (Unwin & Henderson, 1975) and nonperiodic (Saxton & Frank, 1977) specimens. In addition, protection methods such as glucose embedding (Unwin & Henderson, 1975) and maintenance of specimen hydration at low temperatures (Taylor & Glaeser, 1976) have also shown promise. Despite these successes, the basic nature of radiation damage in the electron microscope is far from clear. In general we cannot predict exactly how different structures will behave during electron Irradiation at high dose rates. Moreover, with the rapid rise of analytical electron microscopy over the last few years, nvicroscopists are becoming concerned with questions of compositional as well as structural integrity. It is important to measure changes in elemental composition arising from atom migration in or loss from the specimen as a result of electron bombardment.

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