Boron-Oxygen-Related Defect in Silicon

In silicon with high oxygen and boron content a new absorption band situated near 1026 cm-1 was found in Si after light illuminSuperscript textation with intensity of 70 mW/cm2. It was shown that both oxygen and boron are the component of the defect to which found band corresponds. It was revealed that defect occurs also during thermal treatments of silicon without illumination when a weak current was applied to the sample upon the treatment. The assumption was made that the formation of defect occurs both as result of direct interaction of components and through intermediate metastable states.

DEFECT CHARACTERIZATION OF HIGH THERMAL CONDUCTIVITY CaF2 DOPED AlN CERAMICS BY RAMAN SPECTROSCOPY

Calcium fluoride additive was used to produce high thermal conductivity AlN ceramics which has no grain boundary phase. Thermal conductivity of AlN is determined by the point defect, represented as oxygen related defect, within the AlN grain. The defect density characterization of high thermal conductivity CaF 2 doped AlN ceramics after heat treatment was conducted by Raman spectroscopy. As measure Raman linewidth broadening, the point defect density variation after heat treatment and corresponding thermal conductivity change was investigated.