Experimental observation of oxygen-related defect state in pentacene thin films

2007 ◽  
Vol 90 (9) ◽  
pp. 092112 ◽  
Author(s):  
V. Nádaždy ◽  
R. Durný ◽  
J. Puigdollers ◽  
C. Voz ◽  
S. Cheylan ◽  
...  
Keyword(s):  
Thin Films ◽  
Experimental Observation ◽  
Defect State ◽  
Oxygen Related Defect ◽  
Related Defect

scholarly journals Ag related defect state in ZnO thin films

2010 ◽  
Author(s):  
Holger von Wenckstern ◽  
Alexander Lajn ◽  
Andreas Laufer ◽  
Bruno K. Meyer ◽  
Holger Hochmuth ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Defect State ◽  
Related Defect

scholarly journals Orientation transitions during the growth of imine covalent organic framework thin films

2017 ◽  
Vol 5 (21) ◽  
pp. 5090-5095 ◽  
Author(s):  
H. Wang ◽  
B. He ◽  
F. Liu ◽  
C. Stevens ◽  
M. A. Brady ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Experimental Observation ◽  
Growth Kinetic ◽  
Film Growth ◽  
Nucleation And Growth ◽  
Thin Film Growth ◽  
Covalent Organic Framework ◽  
Kinetic Processes ◽  
Organic Framework

The first experimental observation of a rare re-entrant transition during COF thin film growth reveals independent nucleation and growth kinetic processes.

Exciton and Defect Photoluminescence Signatures in Single Crystal Rubrene

2006 ◽  
Vol 965 ◽  
Author(s):  
Oleg Mitrofanov ◽  
David V Lang ◽  
Christian Kloc ◽  
Theo Siegrist ◽  
Woo-Young So ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Photoluminescence Spectra ◽  
Photoluminescence Band ◽  
Exciton Dissociation ◽  
Acceptor Center ◽  
Oxygen Related Defect ◽  
Recombination Processes ◽  
Photo Conductivity ◽  
Exciton Recombination ◽  
Related Defect

ABSTRACTRadiative recombination processes provide valuable information about exciton dynamics and allow detection of defects in rubrene crystals. We demonstrate that the photoluminescence spectra of crystalline rubrene reflect exciton dissociation through oxygen-related defects in addition to the direct exciton recombination. The defect-assisted exciton dissociation results in a well-defined photoluminescence band. These defects play an important role in charge transport. Dark- and photo-conductivity is higher in rubrene crystals with a large density of the defects. The observations strongly suggest that the oxygen-related defect forms a bandgap state and acts as an acceptor center in crystalline rubrene.

Optical Absorption of Nitrogen Vacancy in Proton Irradiated AlxGa1-xN thin Films

2001 ◽  
Vol 693 ◽  
Author(s):  
Qiaoying Zhou ◽  
M. O. Manasreh ◽  
M. Pophristic ◽  
Ian T. Ferguson ◽  
B. D. Weaver
Keyword(s):  
Thin Films ◽  
Absorption Band ◽  
Optical Absorption ◽  
Peak Position ◽  
Nitrogen Vacancy ◽  
Sapphire Substrates ◽  
Theoretical Predictions ◽  
Related Defect ◽  
Absorption Measurements ◽  
Good Agreement

AbstractOptical absorption measurements were used to investigate deep defects in proton irradiated doped and undoped AlGaN thin films grown on sapphire substrates. Several samples were proton irradiated with energies ranging between 10 keV and 1 MeV. In certain samples, multiple-energy ion implantation was found necessary to produce a defect, which is responsible for the absorption band observed at 4.61 eV with a shoulder at around 4.10 eV in Al0.6Ga0.4N. Furnace thermal annealing of the irradiated samples show that this absorption band starts to anneal out at temperature as low as 200 oC. A combined isochronal and isothermal annealing in the temperature range of 200- 350°C shows that the activation energy (enthalpy associated with the migration process) of this defect is approximately 0.41 eV. This leads us to conclude that this absorption band is due to a N-vacancy related defect. It is observed that the peak position energy of the absorption band due to this defect is shifted depending on the Al mole fraction in good agreement with the theoretical predictions.

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