scholarly journals Time-resolved photoluminescence characterization of oxygen-related defect centers in AlN

2016 ◽  
Vol 109 (2) ◽  
pp. 021113 ◽  
Author(s):  
Kumihiro Genji ◽  
Takashi Uchino
Keyword(s):  
Time Resolved ◽  
Defect Centers ◽  
Oxygen Related Defect ◽  
Related Defect ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence characterization of 2 eV band in AlN

2015 ◽  
Vol 12 (4-5) ◽  
pp. 353-356 ◽  
Author(s):  
Ivan A. Aleksandrov ◽  
Vladimir G. Mansurov ◽  
Victor F. Plyusnin ◽  
Konstantin S. Zhuravlev
Keyword(s):  
Time Resolved ◽  
Time Resolved Photoluminescence

Epitaxial Growth and Luminescence Characterization of Si-based Double Heterostructures Light-emitting Diodes with Iron Disilicide Active Region

2006 ◽  
Vol 958 ◽  
Author(s):  
Takashi Suemasu ◽  
Cheng Li ◽  
Tsuyoshi Sunohara ◽  
Yuta Ugajin ◽  
Ken'ichi Kobayashi ◽  
...  
Keyword(s):  
Decay Time ◽  
Room Temperature ◽  
Time Resolved ◽  
Iron Disilicide ◽  
Light Emitting ◽  
Si Substrates ◽  
Carrier Recombination ◽  
Double Heterostructures ◽  
Time Resolved Photoluminescence

ABSTRACTWe have epitaxially grown Si/β-FeSi2/Si (SFS) structures with β-FeSi2 particles or β-FeSi2 continuous films on Si substrates by molecular beam epitaxy (MBE), and observed 1.6 μm electroluminescence (EL) at room temperature (RT). The EL intensity increases with increasing the number of β-FeSi2 layers. The origin of the luminescence was discussed using time-resolved photoluminescence (PL) measurements. It was found that the luminescence originated from two sources, one with a short decay time (τ∼10 ns) and the other with a long decay time (τ∼100 ns). The short decay time was due to carrier recombination in β-FeSi2, whereas the long decay time was due probably to a defect-related D1 line in Si.

Characterization of the Mechanism of Activation for Visible Luminescence in Tb-Doped Crystalline and Amorphous AlN Thin Films

2000 ◽  
Vol 639 ◽  
Author(s):  
C. M. Spalding ◽  
M. L. Caldwell ◽  
A. L. Martin ◽  
V. I. Dimitrova ◽  
M. E. Kordesch ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Secondary Ion Mass Spectrometry ◽  
Rapid Quenching ◽  
Activation Process ◽  
Time Resolved ◽  
Visible Luminescence ◽  
Before And After ◽  
Time Resolved Photoluminescence ◽  
Secondary Ion

ABSTRACTHigh-temperature treatments are necessary for luminescence ‘activation’ of sputterdeposited, RE-doped, III-nitride phosphor materials. We report an investigation of the activation process in crystalline and amorphous Tb-doped AlN films. These films were characterized before and after thermal activation at temperatures up to 1000° C by cathodoluminescence (CL), static and time-resolved photoluminescence (PL), and secondary ion mass spectrometry (SIMS). The results suggest that the absence of luminescence in unactivated and in old activated samples is due to rapid quenching of the RE excited state. Furthermore, the quenching in the activated, aged samples appears to be due to sorption of ambient water vapor. Energy transfer to a harmonic of the O-H vibration is a likely quenching pathway in these samples. Unfortunately, this water-related quenching mechanism is implausible as a candidate in freshly-made, unactivated samples since water is excluded from the growth chamber.

Time-resolved photoluminescence characterization of GaAs nanowire arrays on native substrate

2017 ◽  
Vol 28 (50) ◽  
pp. 505706 ◽  
Author(s):  
Vilgailė Dagytė ◽  
Enrique Barrigón ◽  
Wei Zhang ◽  
Xulu Zeng ◽  
Magnus Heurlin ◽  
...  
Keyword(s):  
Nanowire Arrays ◽  
Time Resolved ◽  
Gaas Nanowire ◽  
Time Resolved Photoluminescence

The Formation of Radiative Defects at GaAs/GaInP Interface

1995 ◽  
Vol 417 ◽  
Author(s):  
Kazuo Uchida ◽  
Takayuki Arai ◽  
Koh Matsumoto
Keyword(s):  
Quantum Wells ◽  
Temperature Dependent ◽  
Electron Hole ◽  
Time Resolved ◽  
Organic Vapor ◽  
Spatially Distributed ◽  
Electron Hole Pair ◽  
Metal Organic ◽  
Related Defect ◽  
Time Resolved Photoluminescence

AbstractWe report the optical characteristics of 100 A˚ thick GaAs/Ga0.521n0.48P single quantum wells grown by Metal Organic Vapor Phase Epitaxy. We have confirmed from the 77 K photoluminescence (PL) that an optimum growth sequence is necessary to achieve the emission from the well (1.52 eV), otherwise only the deep emission band (1.46 eV) is observed. From the time-resolved photoluminescence and temperature dependent PL measurements, we assign that this 1.46 eV deep emission is a recombination of electron-hole pair in a vacancy-related defect which is spatially distributed at the imperfect GaAs/Ga 0.521n0.48P interface.

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