scholarly journals Kinetics of the boron-oxygen related defect in theory and experiment

2010 ◽  
Vol 108 (11) ◽  
pp. 114509 ◽  
Author(s):  
Axel Herguth ◽  
Giso Hahn
Keyword(s):  
Oxygen Related Defect ◽  
Related Defect ◽  
Kinetics Of ◽  
Theory And Experiment

Exciton and Defect Photoluminescence Signatures in Single Crystal Rubrene

2006 ◽  
Vol 965 ◽  
Author(s):  
Oleg Mitrofanov ◽  
David V Lang ◽  
Christian Kloc ◽  
Theo Siegrist ◽  
Woo-Young So ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Photoluminescence Spectra ◽  
Photoluminescence Band ◽  
Exciton Dissociation ◽  
Acceptor Center ◽  
Oxygen Related Defect ◽  
Recombination Processes ◽  
Photo Conductivity ◽  
Exciton Recombination ◽  
Related Defect

ABSTRACTRadiative recombination processes provide valuable information about exciton dynamics and allow detection of defects in rubrene crystals. We demonstrate that the photoluminescence spectra of crystalline rubrene reflect exciton dissociation through oxygen-related defects in addition to the direct exciton recombination. The defect-assisted exciton dissociation results in a well-defined photoluminescence band. These defects play an important role in charge transport. Dark- and photo-conductivity is higher in rubrene crystals with a large density of the defects. The observations strongly suggest that the oxygen-related defect forms a bandgap state and acts as an acceptor center in crystalline rubrene.

Kinetics of the methoxy radical decomposition reaction: theory and experiment

1989 ◽  
Vol 93 (11) ◽  
pp. 4404-4408 ◽  
Author(s):  
Michael Page ◽  
M. C. Lin ◽  
Yisheng He ◽  
T. K. Choudhury
Keyword(s):  
Decomposition Reaction ◽  
Radical Decomposition ◽  
Reaction Theory ◽  
Methoxy Radical ◽  
Kinetics Of ◽  
Theory And Experiment

Poroelastic swelling kinetics of thin hydrogel layers: comparison of theory and experiment

Soft Matter ◽  
2010 ◽  
Vol 6 (23) ◽  
pp. 6004 ◽  
Author(s):  
Jinhwan Yoon ◽  
Shengqiang Cai ◽  
Zhigang Suo ◽  
Ryan C. Hayward
Keyword(s):  
Swelling Kinetics ◽  
Kinetics Of ◽  
Theory And Experiment

Kinetics of heterocoagulation 1. A comparison of theory and experiment

1992 ◽  
Vol 64 (3-4) ◽  
pp. 317-324 ◽  
Author(s):  
Hiroshi Kihira ◽  
Niels Ryde ◽  
Egon Matijević
Keyword(s):  
Kinetics Of ◽  
Theory And Experiment

Effects of Hydrogen or Nitrogen on Growth of Oxygen-Related Defects in Germanium

1992 ◽  
Vol 262 ◽  
Author(s):  
Noboru Makihara ◽  
Kazuyoshi Ito ◽  
Kaoru Mizuno ◽  
Kotaro Ono
Keyword(s):  
Electron Irradiation ◽  
Electron Trap ◽  
Hydrogen Ions ◽  
Nitrogen Implantation ◽  
Hydrogen Atoms ◽  
Active Centers ◽  
Defect Migration ◽  
Defect Growth ◽  
Oxygen Related Defect ◽  
Related Defect

ABSTRACTOxygen-doped germanium crystals were used to demonstrate the interaction between implanted hydrogen or nitrogen atoms and the oxygen-related defects. The electron trap at Eo-0.26eV associated with the germanium A-center was found to be formed by electron irradiation. Another level at Eo-0.21eV also was observed on annealing at 120 °C. As for the sample implanted with hydrogen ions following electron irradiation, the trap concentration is four times as large as that for electron irradiation alone. It is probable that the germanium A-centers produced by electron irradiation capture hydrogen atoms and increase electrically active centers. After nitrogen implantation following electron irradiation, the Eo-0.26eV level almost annealed out at 140 °C and the trap at Eo-0.21eV wasn't observed. We propose that the reduction in the oxygen-related defect growth is due to the prevention of defect migration with nitrogen atoms.

On the nature of the oxygen-related defect in aluminum nitride

1990 ◽  
Vol 5 (8) ◽  
pp. 1763-1773 ◽  
Author(s):  
J. H. Harris ◽  
R. A. Youngman ◽  
R. G. Teller
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Lattice Parameter ◽  
Extended Defects ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Oxygen Related Defect ◽  
Diffraction Lattice ◽  
Related Defect ◽  
Oxygen Concentrations

The oxygen-related defect in an aluminum nitride (AIN) single crystal and in polycrystalline ceramics is investigated utilizing photoluminescence spectroscopy, thermal conductivity measurements, x-ray diffraction lattice parameter measurements, and transmission electron microscopy. The results of these measurements indicate that at oxygen concentrations near 0.75 at.%, a transition in the oxygen accommodating defect occurs. On both sides of this transition, simple structural models for the oxygen defect are proposed and shown to be in good agreement with the thermal conductivity and lattice parameter measurements, and to be consistent with the formation of various extended defects (e.g., inversion domain boundaries) at higher oxygen concentrations.

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