scholarly journals Strain-driven diffusion process during silicon oxidation investigated by coupling density functional theory and activation relaxation technique

2017 ◽  
Vol 147 (5) ◽  
pp. 054701 ◽  
Author(s):  
N. Salles ◽  
N. Richard ◽  
N. Mousseau ◽  
A. Hemeryck
2007 ◽  
Vol 131-133 ◽  
pp. 265-270
Author(s):  
N. Fujita ◽  
R. Jones ◽  
T.A.G. Eberlein ◽  
Sven Öberg ◽  
Patrick R. Briddon

In this paper we investigate the formation of interstitial nitrogen trimers N3 which have been suggested as a fast-diffusing species in silicon recently. Out-diffusion profiles of nitro- gen show the involvement of at least two independent nitrogen related defects in the diffusion process depending on the nitrogen concentration at different depths of the sample. When the nitrogen concentration is small it is proposed that nitrogen trimers are formed in a two step process. We present the structural properties of such a defect using density functional theory and examine the energetics of the two proposed reactions leading to the formation of N3.


2019 ◽  
Vol 21 (44) ◽  
pp. 24478-24488 ◽  
Author(s):  
Martin Gleditzsch ◽  
Marc Jäger ◽  
Lukáš F. Pašteka ◽  
Armin Shayeghi ◽  
Rolf Schäfer

In depth analysis of doping effects on the geometric and electronic structure of tin clusters via electric beam deflection, numerical trajectory simulations and density functional theory.


2000 ◽  
Vol 98 (20) ◽  
pp. 1639-1658 ◽  
Author(s):  
Yuan He, Jurgen Grafenstein, Elfi Kraka,

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