A revised model of silicon oxidation during the dissolution of silicon in HF/HNO3 mixtures
2019 ◽
Vol 21
(39)
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pp. 22002-22013
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This article presents a comprehensive quantification of the gaseous and dissolved reaction products formed during the etching of Si in HF/HNO3 mixtures and provides a revised model of HNO3 reduction during the oxidation of Si.
1977 ◽
Vol 35
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pp. 316-317
1988 ◽
Vol 46
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pp. 474-475
1988 ◽
Vol 46
◽
pp. 738-739
Keyword(s):
1989 ◽
Vol 47
◽
pp. 562-563
Keyword(s):
1990 ◽
Vol 48
(3)
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pp. 880-881
1987 ◽
Vol 48
(C7)
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pp. C7-601-C7-605
1996 ◽
Vol 76
(02)
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pp. 253-257
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1966 ◽
Vol 16
(01/02)
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pp. 277-295
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1972 ◽
Vol 22
(6)
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pp. 651-657
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