Silicon Oxidation by NAPPES: From Dangling Bonds to Oxygen Islands to 2D SiOx Layer to the Onset of Bulk SiO2 Formation

2018 ◽  
Vol 122 (8) ◽  
pp. 4331-4338 ◽  
Author(s):  
Manoj Kumar Ghosalya ◽  
Ruchi Jain ◽  
Kasala Prabhakar Reddy ◽  
Chinnakonda S. Gopinath
Keyword(s):  
Dangling Bonds ◽  
Silicon Oxidation

Photoconductivity in Vacuum Deposited Films of Silicon-Based Polymers

1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe
Keyword(s):  
Charge Transfer ◽  
Chemical Modification ◽  
Electronic Transport ◽  
Hole Transport ◽  
Electron Acceptors ◽  
Oxygen Atmosphere ◽  
Dangling Bonds ◽  
Silicon Based ◽  
Deposited Films

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.

Metastable Defects in the Amorphous Silicon-Germanium Alloys

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dangling Bonds ◽  
Annealing Behavior ◽  
Fundamental Properties ◽  
Silicon Materials ◽  
Salient Features ◽  
The Individual ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

Roles of strain and carrier in silicon oxidation

2020 ◽  
Vol 59 (SM) ◽  
pp. SM0801
Author(s):  
Shuichi Ogawa ◽  
Akitaka Yoshigoe ◽  
Jaiyi Tang ◽  
Yuki Sekihata ◽  
Yuji Takakuwa
Keyword(s):  
Silicon Oxidation

scholarly journals A Facile and Efficient Bromination of Multi-Walled Carbon Nanotubes

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3161
Author(s):  
Sandra Zarska ◽  
Damian Kulawik ◽  
Volodymyr Pavlyuk ◽  
Piotr Tomasik ◽  
Alicja Bachmatiuk ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Room Temperature ◽  
Covalent Attachment ◽  
Closed Vessel ◽  
Dangling Bonds ◽  
Magnetic Stirrer ◽  
Defect Sites ◽  
Multi Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes ◽  
Covalently Bound

The bromination of multi-walled carbon nanotubes (MWCNT) was performed with vapor bromine in a closed vessel, and they were subjected to intensive stirring with a magnetic stirrer for up to 14 days. The efficiency of bromination was compared depending upon duration. The structure and surface of the crude and purified products were characterized by detailed physicochemical analyses, such as SEM/EDS, TEM, XRD, TGA, Raman, and XPS spectroscopies. The studies confirmed the presence of bromine covalently bound with nanotubes as well as the formation of inclusion MWCNT–Br2 complexes. It was confirmed that Br2 molecules are absorbed on the surface of nanotubes (forming the CNT-Br2 complex), while they can dissociate close to dangling bonds at CNT defect sites with the formation of covalent C−Br bonds. Thus, any covalent attachment of bromine to the graphitic surface achieved around room temperature is likely related to the defects in the MWCNTs. The best results, i.e., the highest amount of attached Br2, were obtained for brominated nanotubes brominated for 10 days, with the content of covalently bound bromine being 0.68 at% (by XPS).

Luminescence of porous silicon derived nanocrystals dispersed in water: dependence on initial porous silicon oxidation

2006 ◽  
Vol 8 (6) ◽  
pp. 1071-1074 ◽  
Author(s):  
Elena Froner ◽  
Roberta Adamo ◽  
Zeno Gaburro ◽  
Benno Margesin ◽  
Lorenzo Pavesi ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Oxidation
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