scholarly journals DIFFUSION OF PHOSPHORUS INTO SILICON THROUGH SILICON DIOXIDE FILM GROWN BY THERMAL OXIDATION

1964 ◽  
Vol 20 (7) ◽  
pp. 662
Author(s):  
CHEN CHEN-CHIA ◽  
YOUNG CHENG-CHING ◽  
HUANG HENG-CHI
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Silicon Dioxide Film ◽  
Dioxide Film

Characterization of silicon dioxide film by high spatial resolution cathodoluminescence spectroscopy

2002 ◽  
Vol 92 (12) ◽  
pp. 7153-7156 ◽  
Author(s):  
M. Yoshikawa ◽  
K. Matsuda ◽  
Y. Yamaguchi ◽  
T. Matsunobe ◽  
Y. Nagasawa ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Silicon Dioxide Film ◽  
Cathodoluminescence Spectroscopy ◽  
Dioxide Film

Low-energy mass-selected ion beam production of fragments from tetraethylorthosilicate for the formation of silicon dioxide film

2018 ◽  
Vol 655 ◽  
pp. 22-26 ◽  
Author(s):  
Satoru Yoshimura ◽  
Satoshi Sugimoto ◽  
Takae Takeuchi ◽  
Kensuke Murai ◽  
Masato Kiuchi
Keyword(s):  
Silicon Dioxide ◽  
Ion Beam ◽  
Low Energy ◽  
Silicon Dioxide Film ◽  
Beam Production ◽  
Dioxide Film

Measurements for the Moisture Permeations and Thermal Resistances of Cyclo Olefin Copolymer Substrates Deposited a Silicon Dioxide Film

2008 ◽  
Author(s):  
Rong-Yuan Jou
Keyword(s):  
Thermal Resistance ◽  
Silicon Dioxide ◽  
Diffusion Barrier ◽  
Moisture Diffusion ◽  
Permeation Rate ◽  
Test Method ◽  
Thermal Barrier ◽  
Silicon Dioxide Film ◽  
Plastic Substrates ◽  
Dioxide Film

Plastic substrates for organic light-emitting devices (OLED) are extremely sensitive to moisture and oxygen. A new amorphous engineering thermoplastic, nominated cyclic olefin copolymer (COC) has been used for this application, because of higher transparence, lower birefringence, lower dispersion and lower water absorption. However, COC plastic substrates can’t sustain plasma-based processing temperatures at 350°C. In this study, experiments of the moisture permeation rate testing and the thermal resistance experiments are conducted to explore the moisture diffusion barrier and thermal barrier characteristics of COC substrate deposited a SiO2 thin film on it. Silicon dioxide layer of thickness, 0.25μm, 0.5μm, and 1 μm, respectively, are fabricated by PECVD. For the permeation rate measurement, the Ca-test method is adopted. For the thermal resistance measurements, two methods of the thermocouple in vacuum environment and the IR thermography are adopted and measured results are compared. Different surface temperatures, 323.15K, 373.15K, 408.15K, and 473.15K, respectively, are applied upon the silicon dioxide film and temperature differences for varied thickness of silicon dioxide film are measured. Experimental results are presented to investigate the behaviors of moisture diffusion barrier and thermal barrier characteristics of the COC/SiO2 structure.

Characteristics of thermally nitrided silicon dioxide film and plasma enhancement

1984 ◽  
Vol 13 (6) ◽  
pp. 913-929 ◽  
Author(s):  
I. Kato ◽  
T. Ito ◽  
T. Nakamura ◽  
H. Ishikawa
Keyword(s):  
Silicon Dioxide ◽  
Silicon Dioxide Film ◽  
Plasma Enhancement ◽  
Dioxide Film

Planarized Deposition of High-Quality Silicon Dioxide Film by Photoassisted Plasma CVD at 300°C Using Tetraethyl Orthosilicate

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2341-L2344 ◽  
Author(s):  
Nobumasa Suzuki ◽  
Kazuya Masu ◽  
Kazuo Tsubouchi ◽  
Nobuo Mikoshiba
Keyword(s):  
Silicon Dioxide ◽  
Tetraethyl Orthosilicate ◽  
Plasma Cvd ◽  
High Quality ◽  
Silicon Dioxide Film ◽  
Dioxide Film
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