scholarly journals Effects of Nitrogen Partial Pressure on the Properties of Al-Cr-N Films Prepared by DC Reactive Sputtering

2004 ◽  
Vol 55 (4) ◽  
pp. 271-275
Author(s):  
Yukio IDE ◽  
Satoshi NAKAMURA ◽  
Akihiro NINO ◽  
Katsuhiko KISHITAKE
Keyword(s):  
Partial Pressure ◽  
Reactive Sputtering ◽  
Nitrogen Partial Pressure

scholarly journals Structural, optical and electrical properties of reactively sputtered CrxNy films: Nitrogen influence on the phase formation

2017 ◽  
Vol 11 (1) ◽  
pp. 45-51 ◽  
Author(s):  
Mirjana Novakovic ◽  
Maja Popovic ◽  
Zlatko Rakocevic ◽  
Natasa Bibic
Keyword(s):  
Partial Pressure ◽  
Phase Formation ◽  
Rutherford Backscattering Spectrometry ◽  
Deposition Process ◽  
Columnar Structure ◽  
Nitrogen Partial Pressure ◽  
Tem Analysis ◽  
Dense Microstructure ◽  
Transmission Electron ◽  
Partial Pressures

The properties of various CrxNy films grown by direct current (DC) reactive sputtering process with different values of nitrogen partial pressures (0, 2?10-4, 3.5?10-4 and 5?10-4 mbar) were studied. The structural analysis of the samples was performed by using X-ray diffraction and transmission electron microscopy (TEM), while an elemental analysis was realized by means of Rutherford backscattering spectrometry. By varying nitrogen partial pressure the pure Cr layer, mixture of Cr, Cr2N and CrN phases, or single-phase CrN was produced. TEM analysis showed that at pN2 = 2?10-4 mbar the layer has dense microstructure. On the other hand, the layer deposited at the highest nitrogen partial pressure exhibits pronounced columnar structure. The optical properties of CrxNy films were evaluated from spectroscopic ellipsometry data by the Drude or combined Drude and Tauc-Lorentz model. It was found that both refractive index and extinction coefficient are strongly dependent on the dominant phase formation (Cr, Cr2N, CrN) during the deposition process. Finally, the electrical studies indicated the metallic character of Cr2N phase and semiconducting behaviour of CrN.

Effect of nitrogen partial pressure on Al–Ti–N films deposited by arc ion plating

2011 ◽  
Vol 258 (5) ◽  
pp. 1819-1825 ◽  
Author(s):  
Fei Cai ◽  
Shihong Zhang ◽  
Jinlong Li ◽  
Zhong Chen ◽  
Mingxi Li ◽  
...  
Keyword(s):  
Partial Pressure ◽  
Nitrogen Partial Pressure ◽  
Arc Ion Plating ◽  
Ion Plating

scholarly journals Reactive sputtering deposition of SiO2 thin films

2008 ◽  
Vol 73 (1) ◽  
pp. 121-126
Author(s):  
Ivan Radovic ◽  
Yves Serruys ◽  
Yves Limoge ◽  
Natasa Bibic
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Reactive Sputtering ◽  
Beam Current ◽  
Sputtering Deposition ◽  
Gas Cylinder ◽  
High Purity Silicon

SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5?10-6-2?10-4 mbar) and of the ion beam current on the target (1.67-6.85 mA). The argon partial pressure during operation of the ion gun was 1?10-3 mbar. The substrate temperature was held at 550?C and the films were deposited to a thickness of 12.5-150 nm, at a rate from 0.0018-0.035 nm s-1. Structural characterization of the deposited thin films was performed by Rutherford backscattering spectrometry (RBS analysis). Reactive sputtering was proved to be efficient for the deposition of silica at 550?C, an oxygen partial pressure of 2?10-4 mbar (ion beam current on the target of 5 mA) or, at a lower deposition rate, ion beam current of 1.67 mA and an oxygen partial pressure of 6?10-5 mbar. One aspect of these investigations was to study the consumption of oxygen from the gas cylinder, which was found to be lower for higher deposition rates.

Influences of nitrogen partial pressure on the optical properties of copper nitride films

RSC Advances ◽  
2016 ◽  
Vol 6 (47) ◽  
pp. 40895-40899 ◽  
Author(s):  
Jianrong Xiao ◽  
Meng Qi ◽  
Yong Cheng ◽  
Aihua Jiang ◽  
Yaping Zeng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Partial Pressure ◽  
Radio Frequency Magnetron ◽  
Nitrogen Partial Pressure ◽  
Radio Frequency Magnetron Sputtering ◽  
Copper Nitride

Cu3N films were prepared by radio frequency magnetron sputtering techniques and the optical properties of the films were investigated.

scholarly journals Ion-beam irradiation effects on reactively sputtered CrN layers

2011 ◽  
Vol 5 (1) ◽  
pp. 25-29 ◽  
Author(s):  
Mirjana Novakovic ◽  
Maja Popovic ◽  
Natasa Bibic
Keyword(s):  
Partial Pressure ◽  
Structural Changes ◽  
Ion Beam ◽  
Xrd Analysis ◽  
Nitrogen Partial Pressure ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Partial Pressures ◽  
Mean Grain Size ◽  
Argon Ions

This paper presents a study of micro-structural changes induced in CrN layers by irradiation with 120 keV argon ions. The layers were deposited on (100) Si wafers, at different nitrogen partial pressures (2?10-4, 3.5?10-4 and 5?10-4 mbar), to a total thickness of 260-280 nm. During deposition the substrates were held at 150?C. After deposition the samples were irradiated with argon ions to the fluencies of 1?1015 and 1?1016 ions/cm2, under the vacuum of 7?10-6 mbar. Characterization of the samples structure and morphology were performed by X-ray diffraction (XRD) analysis and cross-sectional transmission electron microscopy (XTEM), and the concentration profiles were determined by Rutheford backscattering (RBS) spectrometry. It was found that the layer composition strongly depends on the nitrogen partial pressure during deposition. A pure stoichiometric CrN phase was achieved for the highest nitrogen partial pressure (5?10-4 mbar). Argon ions irradiation induces micro-structural changes in the CrN layers such as variation of the lattice constants, micro-strain and mean grain size.

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