scholarly journals Structural, optical and electrical properties of reactively sputtered CrxNy films: Nitrogen influence on the phase formation

2017 ◽  
Vol 11 (1) ◽  
pp. 45-51 ◽  
Author(s):  
Mirjana Novakovic ◽  
Maja Popovic ◽  
Zlatko Rakocevic ◽  
Natasa Bibic
Keyword(s):  
Partial Pressure ◽  
Phase Formation ◽  
Rutherford Backscattering Spectrometry ◽  
Deposition Process ◽  
Columnar Structure ◽  
Nitrogen Partial Pressure ◽  
Tem Analysis ◽  
Dense Microstructure ◽  
Transmission Electron ◽  
Partial Pressures

The properties of various CrxNy films grown by direct current (DC) reactive sputtering process with different values of nitrogen partial pressures (0, 2?10-4, 3.5?10-4 and 5?10-4 mbar) were studied. The structural analysis of the samples was performed by using X-ray diffraction and transmission electron microscopy (TEM), while an elemental analysis was realized by means of Rutherford backscattering spectrometry. By varying nitrogen partial pressure the pure Cr layer, mixture of Cr, Cr2N and CrN phases, or single-phase CrN was produced. TEM analysis showed that at pN2 = 2?10-4 mbar the layer has dense microstructure. On the other hand, the layer deposited at the highest nitrogen partial pressure exhibits pronounced columnar structure. The optical properties of CrxNy films were evaluated from spectroscopic ellipsometry data by the Drude or combined Drude and Tauc-Lorentz model. It was found that both refractive index and extinction coefficient are strongly dependent on the dominant phase formation (Cr, Cr2N, CrN) during the deposition process. Finally, the electrical studies indicated the metallic character of Cr2N phase and semiconducting behaviour of CrN.

scholarly journals Ion-beam irradiation effects on reactively sputtered CrN layers

2011 ◽  
Vol 5 (1) ◽  
pp. 25-29 ◽  
Author(s):  
Mirjana Novakovic ◽  
Maja Popovic ◽  
Natasa Bibic
Keyword(s):  
Partial Pressure ◽  
Structural Changes ◽  
Ion Beam ◽  
Xrd Analysis ◽  
Nitrogen Partial Pressure ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Partial Pressures ◽  
Mean Grain Size ◽  
Argon Ions

This paper presents a study of micro-structural changes induced in CrN layers by irradiation with 120 keV argon ions. The layers were deposited on (100) Si wafers, at different nitrogen partial pressures (2?10-4, 3.5?10-4 and 5?10-4 mbar), to a total thickness of 260-280 nm. During deposition the substrates were held at 150?C. After deposition the samples were irradiated with argon ions to the fluencies of 1?1015 and 1?1016 ions/cm2, under the vacuum of 7?10-6 mbar. Characterization of the samples structure and morphology were performed by X-ray diffraction (XRD) analysis and cross-sectional transmission electron microscopy (XTEM), and the concentration profiles were determined by Rutheford backscattering (RBS) spectrometry. It was found that the layer composition strongly depends on the nitrogen partial pressure during deposition. A pure stoichiometric CrN phase was achieved for the highest nitrogen partial pressure (5?10-4 mbar). Argon ions irradiation induces micro-structural changes in the CrN layers such as variation of the lattice constants, micro-strain and mean grain size.

Study on Correlate Qualitatively the Deposition Conditions with the Morphology of the Nanocomposite Films

2012 ◽  
Vol 562-564 ◽  
pp. 290-293
Author(s):  
Yong Jun Jiang
Keyword(s):  
Cross Section ◽  
Deposition Rate ◽  
Deposition Process ◽  
Nanocomposite Films ◽  
Nitrogen Partial Pressure ◽  
Target Temperature ◽  
Transmission Electron ◽  
Si Content ◽  
Sinx Layer ◽  
Deposition Conditions

In the Nb–Si–N films, Si content (CSi) was varied in each series by changing the power applied on the Si target, whereas the power on the Nb target was kept constant. The microstructure of the coatings was examined by XRD and in cross-section by transmission electron microscopy (TEM). Depending on TS and pN2, the deposition rate showed significant variations from 0.04 to 0.18 nm/s. The correlation between film morphology (preferential orientation of crystallites, grain size, column dimensions, thickness of the SiNx layer covering NbN crystallites) and the deposition conditions (power applied on Si target, temperature, nitrogen partial pressure and deposition rate) provides useful information for optimizing the deposition process.

OPTICAL AND ELECTRICAL PROPERTIES OF VANADIUM NITRIDE THIN FILMS

1999 ◽  
Vol 13 (07) ◽  
pp. 833-839 ◽  
Author(s):  
M. GHANASHYAM KRISHNA ◽  
A. K. BHATTACHARYA
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Total Pressure ◽  
Optical Constants ◽  
Vanadium Nitride ◽  
Nitrogen Partial Pressure ◽  
Dc Magnetron Sputtering ◽  
Partial Pressures ◽  
Similar Dependence ◽  
Quartz Substrates

Vanadium nitride thin films have been deposited on to quartz substrates by dc magnetron sputtering at two different total pressures and a series of nitrogen partial pressures. The spectral transmittance of these films, in the region 350 to 1500 nm, is strongly dependent on the nitrogen partial pressure during sputtering and relatively insensitive to total pressure. The films became more transparent as the nitrogen partial pressure was decreased at a constant total pressure. The optical constants, refractive index and extinction coefficient, exhibited a similar dependence on the nitrogen partial pressure. The sheet resistivity of the films decreased with increasing nitrogen partial pressure. The values of resistivity indicate that the films are semiconducting rather than metalic.

Changes in Structural, Morphological, and Corrosion Properties of CrN Thin Film Effected by Varying N2 Pressure in the Sputtering Process

2015 ◽  
Vol 659 ◽  
pp. 555-559 ◽  
Author(s):  
Wichuda Wongtanasarasin ◽  
Rachsak Sakdanuphab ◽  
Kajpanya Suwansukho ◽  
Aparporn Sakulkalavek
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Partial Pressure ◽  
Nitrogen Pressure ◽  
Lattice Parameter ◽  
Corrosion Property ◽  
Face Centered Cubic ◽  
Nitrogen Partial Pressure ◽  
Corrosion Properties ◽  
Partial Pressures

In this study, we investigate a facet of the fabrication process of chromium nitride (CrN) film intended as a protective coating for pineapple blades. CrN thin films were deposited on unpolished stainless steel substrates (AISI304) by DC reactive magnetron sputtering in Ar+N2 gases. In principle, the proportion of nitrogen partial pressure to the total pressure in the sputtering process should have considerable effects on the CrN film’s chemical composition, its crystal structure, its hardness, and its corrosion resistance. We tested this supposition out by using several different nitrogen partial pressures in the sputtering process and observed the films deposited. The coatings were deposited at five different nitrogen partial pressures of 4.0x10-4 mbar, 8.0x10-4 mbar, 1.2x10-3 mbar, 1.6x10-3 mbar, and 2.0x10-3. The deposition times were controlled to achieve 5-µm thick films in each deposition. The films were analyzed by several analytical methods, such as X-ray diffraction (XRD), scanning electron microscope, micro-hardness and potentiostat in pineapple juice. The XRD spectra of the films showed face-centered cubic structure with (200) preferred orientation, positively identifying them as Cr2N and CrN thin films. The calculated d-spacing and lattice parameter of the CrN films increased with increasing nitrogen partial pressure; the ranges were 0.283–0.287 nm and 0.491-0.497 nm, respectively. The cross-section morphology of the CrN films reveals the columnar grain growth with a high density. The crystal structure and the grain texture correspond with the hardness property. The films corrosion potential, an indicator of their corrosion property, was varied from -0.14 to -0.05 volts with varying nitrogen pressure. The most corrosion resistant and the good hardness were the film fabricated at the nitrogen partial pressure of 1.2x10-3 mbar.

The Effect of Plasma Gas Composition on the Nanostructures and Optical Properties of TiO2 Films Prepared by Helicon-PECVD

NANO ◽  
2018 ◽  
Vol 13 (10) ◽  
pp. 1850124
Author(s):  
D. Li ◽  
S. Dai ◽  
A. Goullet ◽  
A. Granier
Keyword(s):  
Optical Properties ◽  
Partial Pressure ◽  
Flow Rate ◽  
Flux Ratio ◽  
Rutile Phase ◽  
Columnar Structure ◽  
Titanium Tetraisopropoxide ◽  
Self Bias ◽  
Partial Pressures ◽  
Effect Of Plasma Gas

TiO2 films were deposited from oxygen/titanium tetraisopropoxide (TTIP) plasmas at low temperature by Helicon-PECVD at floating potential ([Formula: see text] or substrate self-bias of [Formula: see text]50[Formula: see text]V. The influence of titanium precursor partial pressure on the morphology, nanostructure and optical properties was investigated. Low titanium partial pressure ([TTIP] [Formula: see text] 0.013[Formula: see text]Pa) was applied by controlling the TTIP flow rate which is introduced by its own vapor pressure, whereas higher titanium partial pressure was formed through increasing the flow rate by using a carrier gas (CG). Then the precursor partial pressures [TTIP[Formula: see text]CG] [Formula: see text][Formula: see text]Pa and 0.093[Formula: see text]Pa were obtained. At [Formula: see text], all the films exhibit a columnar structure, but the degree of inhomogeneity is decreased with the precursor partial pressure. Phase transformation from anatase ([TTIP] [Formula: see text] 0.013[Formula: see text]Pa) to amorphous ([TTIP[Formula: see text]CG] [Formula: see text][Formula: see text]Pa) has been evidenced since the O[Formula: see text] ion to neutral flux ratio in the plasma was decreased and more carbon contained in the film. However, in the case of [Formula: see text]50[Formula: see text]V, the related growth rate for different precursor partial pressures is slightly ([Formula: see text] 15%) decreased. The columnar morphology at [TTIP] [Formula: see text] 0.013[Formula: see text]Pa has been changed into a granular structure, but still homogeneous columns are observed for [TTIP[Formula: see text]CG] [Formula: see text][Formula: see text]Pa and 0.093[Formula: see text]Pa. Rutile phase has been generated at [TTIP] [Formula: see text][Formula: see text]Pa. Ellipsometry measurements were performed on the films deposited at [Formula: see text]50[Formula: see text]V; results show that the precursor addition from low to high levels leads to a decrease in refractive index.

Improvements in the synaptic operations of ferroelectric field-effect transistors using Hf0.5Zr0.5O2 thin films controlled by oxygen partial pressures during the sputtering deposition process

2020 ◽  
Vol 8 (21) ◽  
pp. 7120-7131 ◽  
Author(s):  
Dae-Hong Min ◽  
Tae-Hyun Ryu ◽  
So-Jung Yoon ◽  
Seung-Eon Moon ◽  
Sung-Min Yoon
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Deposition Process ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Sputtering Deposition ◽  
Partial Pressures

Synaptic operations of metal–ferroelectric–metal–insulator–semiconductor (MFMIS) field-effect transistors using HfxZr1−xO2 thin films were successfully demonstrated and optimized by controlling oxygen partial pressure during sputtering deposition.

Structure and Morphology of Reactively Sputtered In0.9Sn0.1Ox Layers

2002 ◽  
Vol 721 ◽  
Author(s):  
R. Mientus ◽  
I. Sieber ◽  
K. Ellmer
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Columnar Structure ◽  
Cross Sectional ◽  
Structure And Morphology ◽  
Partial Pressures ◽  
Resistivity Minimum ◽  
Amorphous Metal Oxide ◽  
Low X ◽  
20 Nm

AbstractIn this work, the influence of the discharge parameter oxygen partial pressure during reactive magnetron sputtering on the structure and morphology of In0.9Sn0.1Ox films is investigated. The oxygen partial pressure was varied in order to deposit In0.9Sn0.1Ox films with 0 ≤ x ≤ 1.76. The composition x was measured by Rutherford backscattering (RBS). For low x values, these films are metallic and opaque, while at x ≈ 1.5 the layers exhibit good properties as transparent and conducting electrodes. Further increase in x leads to transparent insulating films. The morphology of the films, investigated by SEM, shows significant variations with the composition x. While the metallic films consist of coarse globular grains, made up of polycrystalline indium-tin, a small addition of oxygen leads to nearly amorphous metal-oxide mixtures with smooth surfaces. Around x ≈ 1.5 the films are polycrystalline with the cubic In2O3 bixbyite structure and show a resistivity minimum. The cross sectional morphology of these films exhibits a columnar structure of broad bundles (≈250 nm), composed of narrow needle-like crystallites of about 20 nm diameter. At very high oxygen partial pressures, the grain size decreases while the strain and the resistivity increase significantly.

Correlation among Si, Ge, and B deposition rates in low-pressure CVD with SiH4−GeH4−B2H6-He mixtures

1991 ◽  
Vol 6 (1) ◽  
pp. 92-96 ◽  
Author(s):  
Katsumi Murase
Keyword(s):  
Partial Pressure ◽  
Deposition Rate ◽  
Mass Density ◽  
Deposition Process ◽  
Time Interval ◽  
Deposition Rates ◽  
Partial Pressures ◽  
Unit Time Interval ◽  
Amorphous Si ◽  
The Relationship

The deposition process at 500 °C with SiH4–GeH4–B2H6–He mixtures, which yields the amorphous Si–Ge–B alloy, was studied. Although in crystalline Si and Ge the maximum B content is limited to the solid solubility, any amount of B can uniformly be contained in amorphous Si–Ge–B. Thus, films with a B content up to 64 at.% have been prepared. The deposition rate of atoms, defined as the number of atoms deposited in a unit time interval, is obtained for each element by analyzing the growth rate together with the composition and the mass density of the film. When the SiH4 and the B2H6 partial pressures are constant, the Si and the B deposition rates are almost independent of the GeH4 partial pressure. In contrast, the Si deposition rate increases remarkably as the B2H6 partial pressure increases, even when the SiH4 partial pressure is maintained constant. A simple model is proposed for explaining the relationship between the Si and the B deposition rates.

Deposition of Microcrystalline Si,Ge (µc-Si,Ge) Alloys by Reactive Magnetron Sputtering

1994 ◽  
Vol 358 ◽  
Author(s):  
S.M. Cho ◽  
D. Wolfe ◽  
S.S. He ◽  
K. Christensen ◽  
D.M. Maher ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Partial Pressure ◽  
Microstructural Characterization ◽  
High Energy ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Film Properties ◽  
Transmission Electron ◽  
Partial Pressures

ABSTRACTSixGei1−x:H alloys which span the transition from amorphous to microcrystalline structures have been prepared by reactive magnetron sputtering (RMS) from pure crystalline Si and Ge targets in different partial pressures of hydrogen, using argon as the sputtering gas. Film properties were studied as a function of H2 flow and partial pressure. X-ray diffraction (XRD), Raman scattering, Fourier transform infrared spectroscopy (FTIR), reflection high-energy electron diffraction (RHEED), and high resolution transmission electron microscopy (HRTEM) have been used for microstructural characterization. Films prepared by RMS at a partial pressure of hydrogen (PH2) < ∼ 4 mTorr were amorphous, while those prepared with PH2 > ∼ 6 mTorr were microcrystalline.

A Mechanical Study of W and W2N Single Layers, and W2N/W Multilayers

2003 ◽  
Vol 778 ◽  
Author(s):  
L. Maillé ◽  
C. Sant ◽  
P. Aubert ◽  
P. Garnier
Keyword(s):  
Mechanical Properties ◽  
Partial Pressure ◽  
N Deposition ◽  
Nitrogen Partial Pressure ◽  
Layer Spacing ◽  
Partial Pressures ◽  
Mechanical Study

AbstractThe microstructure of W, W2N single layers and W2N/W multilayers are related to their mechanical properties. We study the hardness of multilayers as function of the period thickness. Two partial pressures of nitride (PN2 = 10 % and 50 %) for W2N deposition are investigated. For the single layers, the hardness value increases with the nitrogen partial pressure. The hardness of W2N/W multilayers using PN2 = 50% for W2N deposition increases when the layer spacing decreased. A hardness value of 19.5 GPa is reached for a multilayer with PN2 = 50% and, close to 20 GPa with PN2 = 10% for all the period studied.

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