scholarly journals Reactive sputtering deposition of SiO2 thin films

2008 ◽  
Vol 73 (1) ◽  
pp. 121-126
Author(s):  
Ivan Radovic ◽  
Yves Serruys ◽  
Yves Limoge ◽  
Natasa Bibic
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Reactive Sputtering ◽  
Beam Current ◽  
Sputtering Deposition ◽  
Gas Cylinder ◽  
High Purity Silicon

SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5?10-6-2?10-4 mbar) and of the ion beam current on the target (1.67-6.85 mA). The argon partial pressure during operation of the ion gun was 1?10-3 mbar. The substrate temperature was held at 550?C and the films were deposited to a thickness of 12.5-150 nm, at a rate from 0.0018-0.035 nm s-1. Structural characterization of the deposited thin films was performed by Rutherford backscattering spectrometry (RBS analysis). Reactive sputtering was proved to be efficient for the deposition of silica at 550?C, an oxygen partial pressure of 2?10-4 mbar (ion beam current on the target of 5 mA) or, at a lower deposition rate, ion beam current of 1.67 mA and an oxygen partial pressure of 6?10-5 mbar. One aspect of these investigations was to study the consumption of oxygen from the gas cylinder, which was found to be lower for higher deposition rates.

Behavior of dual ion beam sputtered MgZnO thin films for different oxygen partial pressure

2013 ◽  
Vol 25 (2) ◽  
pp. 772-777 ◽  
Author(s):  
Saurabh Kumar Pandey ◽  
Sushil Kumar Pandey ◽  
Vishnu Awasthi ◽  
Ashish Kumar ◽  
M. Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam

Effect of oxygen partial pressure on the structural and optical properties of ion beam sputtered TiO2 thin films

2016 ◽  
Vol 619 ◽  
pp. 86-90 ◽  
Author(s):  
Firdous A. Tantray ◽  
Arpana Agrawal ◽  
Mukul Gupta ◽  
Joseph T. Andrews ◽  
Pratima Sen
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam ◽  
Structural And Optical Properties ◽  
Tio2 Thin Films ◽  
Effect Of Oxygen

Effect of Oxygen Partial Pressure on the Morphological Properties and the Photocatalytic Activities of Titania Thin Films on Unheated Substrates by Sputtering Deposition Method

2013 ◽  
Vol 770 ◽  
pp. 18-21 ◽  
Author(s):  
P. Pungboon Pansila ◽  
Nirun Witit-Anun ◽  
Surasing Chaiyakun
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Anatase Phase ◽  
Rutile Phase ◽  
Morphological Properties ◽  
Low Oxygen ◽  
Working Pressure ◽  
Sputtering Deposition ◽  
Photocatalytic Activities

Titania (TiO2) thin films have been deposited using d.c. reactive unbalance magnetron sputtering on unheated substrate by various different oxygen partial pressures while working pressure and sputtering power were kept constant. A pure metallic titanium disk was used for sputtering target in atmospheric of the mixture gases between argon and oxygen. The X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for characterization of characteristics structure and surface morphologies of the films, respectively. The optical transmission of the films were measured by spectrophotometer. The photocatalytic activities of the films were investigated from measurement of methylene blue degradation by using absorbance value after UV irradiation for 6 hr. The results show that the crystalline structures of the films showed the presence of single-anatase phase and mixed-anatase/rutile phase of TiO2 thin films. The surface morphology and photocatalytic activities of the films depend on oxygen partial pressure that grains size, surface roughness and thickness of the films were deceased when increasing oxygen partial pressure due to poisoning phenomenon and the high reactive gases. In addition, it was found that all TiO2 thin films were deposited by different oxygen partial pressure exhibit a good transparentness. Moreover, it was found that the TiO2 thin films deposited by used low oxygen partial pressure and single-anatase phase exhibited the best photocatalytic activity.

Electrical Properties and Microstructures of Ultraviolet Transparent Ga2O3 Thin Films

2007 ◽  
Vol 561-565 ◽  
pp. 1233-1236
Author(s):  
Yasuhiro Shigetoshi ◽  
Susumu Tsukimoto ◽  
Hidehisa Takeda ◽  
Kazuhiro Ito ◽  
Masanori Murakami
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Optical Properties ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Partial Pressure Of Oxygen ◽  
Electrical And Optical Properties ◽  
Sputtering Deposition

The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films fabricated on Al2O3(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500 °C during deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3). The transmittance of the Ga2O3 films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga2O3 films would be required.

Analysis of SiO2 Thin Film Deposited by Reactive Sputtering

2006 ◽  
Vol 518 ◽  
pp. 149-154
Author(s):  
I. Radović ◽  
Yves Serruys ◽  
Yves Limoge ◽  
Olivier Jaoul ◽  
N.Ž Romčević ◽  
...  
Keyword(s):  
Partial Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Electrical Current ◽  
Reactive Sputtering ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Silicon Target ◽  
High Purity Silicon

SiO2 layers were deposited by reactive d.c ion sputtering (using 1keV Ar+ ion gun) from a high purity silicon target in an oxygen ambient. The base pressure in the deposition chamber was 4.7·10-9mbar, and the substrate temperature was held at 550 °C. The argon partial pressure during ion gun operation was 1·10-3mbar. Structural characterization of the films was performed by Rutherford backscattering spectrometry (RBS analysis), electron microprobe analysis, X-ray diffraction (XRD analysis) and Raman spectroscopy. Reactive sputtering proved to be efficient for the deposition of silica at an oxygen partial pressure of 2·10-4mbar and an electrical current on the target of 5.5mA.

Ion Beam Assisted Deposition of TiN Thin Films on Si Substrate

2006 ◽  
Vol 518 ◽  
pp. 155-160
Author(s):  
V. Milinović ◽  
M. Milosavljević ◽  
M. Popović ◽  
M. Novaković ◽  
D. Peruško ◽  
...  
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Incident Angle ◽  
Ion Beam ◽  
Preferred Orientation ◽  
Thin Layers ◽  
Phase Identification ◽  
Ion Energy ◽  
Tin Thin Films

In this paper we present a study of the formation of TiN thin films during the IBAD process. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incident angle, Ti evaporation rates and partial pressure of N2 on preferred orientation and resistivity of TiN layers. TiN thin films were grown by evaporation of Ti in the presence of N2 and simultaneously bombarded with Ar+ ions. Base pressure in the IBAD chamber was 1⋅10-6 mbar. The partial pressure of Ar during deposition was (3.1 – 6.6)⋅10-6 mbar and partial pressure of N2 was 6.0⋅10-6 - 1.1⋅10-5 mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to a thickness of 85 – 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy was varied from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30o. All samples were analyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profiles of titanium, nitrogen and silicon were determined with 900 keV He++ ion beam. The RBS spectra were analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD) for phase identification. The resistivity of samples was measured with four-point probe method. The results clearly show that TiN thin layer grows with (111) and (200) preferred orientation, depending on the IBAD deposition parameters. Consequently, the formation of TiN thin layers with wellcontrolled crystalline orientation occurs. Also, it was found that the variations in TiN film resistivity could be mainly attributed to the ion beam induced damage during the IBAD process.

The Characterization of CIGS Thin Films Prepared by Ion Beam Sputtering Deposition from a Quaternary Target

2013 ◽  
Vol 734-737 ◽  
pp. 2545-2548
Author(s):  
Chao Ming Chen ◽  
Ping Fan ◽  
Guang Xing Liang ◽  
Zhuang Hao Zheng ◽  
Dong Ping Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Hall Effect Measurement ◽  
Beam Current ◽  
Chalcopyrite Structure ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
X Ray ◽  
Beam Sputtering ◽  
Beam Currents

This study reports the successful preparation of Cu (In, Ga)Se2(CIGS) thin film solar cells by ion beam sputtering with a chalcopyrite CIGS quaternary target. The films were fabricated with different beam currents. The thin films were characterized with X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and hall effect-measurement system to study the microstructures, composition, surface morphology and electrical properties, respectively. Experimental results show that both the films are chalcopyrite structure, the Ga/(In+Ga) ratio, Cu/(In+Ga) ratio and Se/(Cu+In+Ga) ratio are decrease with the beam currents increase, the surfaces morphology of the films are dense, and the resistivity of the film deposited with the beam current of 40mA is 0.56Ωcm, with a carrier concentration of 4.11Χ1018cm-3and mobility of 2.73cm2V-1s-1. The resulting film exhibited p-type conductivity.

Effect of oxygen partial pressure on the tuning of copper oxide thin films by reactive sputtering for solar light driven photocatalysis

Solar Energy ◽  
2019 ◽  
Vol 187 ◽  
pp. 368-378 ◽  
Author(s):  
S. Sai Guru Srinivasan ◽  
B. Govardhanan ◽  
P. Aabel ◽  
M. Ashok ◽  
M.C. Santhosh Kumar
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Copper Oxide ◽  
Partial Pressure ◽  
Reactive Sputtering ◽  
Solar Light ◽  
Oxide Thin Films ◽  
Effect Of Oxygen
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