scholarly journals Surface Finishing Technology and Semiconductor Fabrication Process. Drying Technology for Silicon Wafer in Semiconductor Manufacturing.

1998 ◽  
Vol 49 (3) ◽  
pp. 253-259
Author(s):  
Cozy BAN ◽  
Kazunao SATO
Keyword(s):  
Silicon Wafer ◽  
Semiconductor Manufacturing ◽  
Fabrication Process ◽  
Surface Finishing ◽  
Semiconductor Fabrication ◽  
Drying Technology

Fabrication of Ultra Thick Ferromagnetic Structures in Silicon

2004 ◽  
Author(s):  
Debbie G. Jones ◽  
Albert P. Pisano
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Saturation Magnetization ◽  
Silicon Wafer ◽  
Fabrication Process ◽  
Sem Images ◽  
Deep Reactive Ion Etching ◽  
Scanning Electron

A novel fabrication process is presented to create ultra thick ferromagnetic structures in silicon. The structures are fabricated by electroforming NiFe into silicon templates patterned with deep reactive ion etching (DRIE). Thin films are deposited into photoresist molds for characterization of an electroplating cell. Results show that electroplated films with a saturation magnetization above 1.6 tesla and compositions of approximately 50/50 NiFe can be obtained through agitation of the electrolyte. Scanning electron microscopy (SEM) images show that NiFe structures embedded in a 500 μm thick silicon wafer are realized and the roughening of the mold sidewalls during the DRIE aids in adhesion of the NiFe to the silicon.

Fabrication Process of Antimony Telluride and Bismuth Telluride Micro Thermoelectric Generator

2015 ◽  
Vol 9 (6) ◽  
pp. 612-618
Author(s):  
Mizue Mizoshiri ◽  
◽  
Masashi Mikami ◽  
Kimihiro Ozaki ◽  
Keyword(s):  
Bismuth Telluride ◽  
Thermoelectric Generator ◽  
Fabrication Process ◽  
Thermoelectric Generators ◽  
Antimony Telluride ◽  
Semiconductor Fabrication ◽  
Micro Thermoelectric Generator ◽  
Key Techniques

This paper describes the process of fabricating micro thermoelectric generators (μ-TEGs) based on antimony telluride (Sb-Te) and bismuth telluride (Bi-Te). These materials have excellent thermoelectric (TE) conversion properties. The deposition and patterning processes for thermoelectric films are key techniques in the fabrication of μ-TEGs. However, it is difficult to form TE micropatterns using conventional semiconductor technologies because Sb-Te and Bi-Te are brittle and difficult to etch. Therefore, a semiconductor fabrication process is developed for TE film patterning. Here, various processes for depositing Sb-Te and Bi-Te TE films are described. Then, the combinations of the deposition and patterning techniques are reviewed. Finally, the generation properties of the μ-TEGs are summarized.

Assessment of fire protection performance of water mist applied in exhaust ducts for semiconductor fabrication process

2005 ◽  
Vol 29 (5) ◽  
pp. 295-302 ◽  
Author(s):  
Yi-Liang Shu ◽  
Wei-Jin Jeng ◽  
Chen-Wei Chiu ◽  
Chiun-Hsun Chen
Keyword(s):  
Fire Protection ◽  
Water Mist ◽  
Fabrication Process ◽  
Semiconductor Fabrication

scholarly journals A Compact Dual-Mode Bandpass Filter with High Out-of-Band Suppression Using a Stub-Loaded Resonator Based on the GaAs IPD Process

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 712 ◽  
Author(s):  
Wei Zhang ◽  
Zhao Yao ◽  
Jie Zhang ◽  
Eun Seong Kim ◽  
Nam Young Kim
Keyword(s):  
Insertion Loss ◽  
High Performance ◽  
Return Loss ◽  
Bandpass Filter ◽  
Open Loop ◽  
Fabrication Process ◽  
Dual Mode ◽  
Transmission Zeros ◽  
Semiconductor Fabrication ◽  
Device Size

In this letter, a compact dual-mode bandpass filter (BPF) with an ultra-wide stopband that employs two folded open-loop resonators (FOLRs) and stub-loaded resonators (SLRs) is proposed. The dual-mode resonators are optimized by loading two SLRs onto the folded open-loop resonators, and this process is analyzed using the dual-mode theory. To miniaturize the device size and increase chip performance, the proposed BPF is fabricated by a III–V compound semiconductor-fabrication process using a high-performance GaAs substrate based on the integration passivation device (IPD) fabrication process. A compact dual-mode BPF with low insertion loss and high return loss is designed and fabricated. Two extra transmission zeros (TZs) located in the high-frequency range increase the wide stopband, and the two TZs near the passband result in a higher selectivity. A resonant frequency centered at 7.45 GHz with an insertion loss of −1.21 dB and a measured return loss of higher than −23.53 dB and 3 dB fractional bandwidths of 5.8% are achieved. The stopband can be suppressed up to 20 GHz owing to the two tunable TZs resulting in higher selectivity and wideband rejection. The size of the filter was drastically optimized using a simplified architecture of two FOLRs and SLRs.

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