scholarly journals Surface Finishing Technology and Semiconductor Fabrication Process. Influence of Silicon Substrate Surface Condition on Gate Oxide Reliability.

1998 ◽  
Vol 49 (3) ◽  
pp. 248-252
Author(s):  
Yoshio OZAWA ◽  
Masato FUKUMOTO ◽  
Yasumasa SUIZU
Keyword(s):  
Silicon Substrate ◽  
Substrate Surface ◽  
Surface Condition ◽  
Gate Oxide ◽  
Fabrication Process ◽  
Surface Finishing ◽  
Oxide Reliability ◽  
Semiconductor Fabrication ◽  
Silicon Substrate Surface

Influence of Hf and H2O2 on Morphology of Silicon Formed by Ag Assisted Chemical Etching

2014 ◽  
Vol 953-954 ◽  
pp. 1045-1048
Author(s):  
Guo Feng Ma ◽  
Heng Ye ◽  
Hong Lin Zhang ◽  
Chun Lin He ◽  
Li Na Sun
Keyword(s):  
Silicon Substrate ◽  
Room Temperature ◽  
Electroless Deposition ◽  
Metal Salt ◽  
Substrate Surface ◽  
Volume Ratio ◽  
Type Silicon ◽  
P Type ◽  
Silicon Substrate Surface ◽  
Si Wafer

The Ag-assisted electroless etching of p-type silicon substrate in HF/H2O2solution at room temperature was investigated. In this work, the effects of HF, H2O2and their volume ratio on morphology and growth of p-type silicon substrate surface by using metal assisted etching were investigated in order to produce a highly efficient antireflecting structure. The Ag metal particles were deposited onto Si wafer by electroless deposition from a metal salt solution including HF. The experimental results show that the growth rate and morphology of the pores formed on the Ag metalized Si surfaces are strongly dependent on the volume ratio of HF and H2O2.

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