The Design and Evaluation of an Integrated Wire Bond-less Power Module using a Low Temperature Co-fired Ceramic Interposer

2016 ◽  
Vol 13 (4) ◽  
pp. 169-175
Author(s):  
Sayan Seal ◽  
Michael D. Glover ◽  
H. Alan Mantooth
Keyword(s):  
Low Temperature ◽  
High Performance ◽  
High Reliability ◽  
Feasibility Studies ◽  
Power Devices ◽  
Power Module ◽  
Fast Switching ◽  
Wire Bond ◽  
Power Modules ◽  
Bandgap Semiconductors

This article presents the plan and initial feasibility studies for an Integrated Wire Bond-less Power Module. Contemporary power modules are moving toward unprecedented levels of power density. The ball has been set rolling by a drastic reduction in the size of bare die power devices owing to the advent of wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride. SiC has capabilities of operating at much higher temperatures and faster switching speeds compared with its silicon counterparts, while being a fraction of their size. However, electronic packaging technology has not kept pace with these developments. High-performance packaging technologies do exist in isolation, but there has been limited success in integrating these disparate efforts into a single high-performance package of sufficient reliability. This article lays the foundation for an electronic package designed to completely leverage the benefits of SiC semiconductor technology, with a focus on high reliability and fast switching capability. The interconnections between the gate drive circuitry and the power devices were implemented using a low temperature cofired ceramic interposer.

The Design and Evaluation of an Integrated Wire-Bondless Power Module (IWPM) using Low Temperature Co-fired Ceramic Interposer

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000065-000072 ◽  
Author(s):  
Sayan Seal ◽  
Michael D. Glover ◽  
H. Alan Mantooth
Keyword(s):  
High Performance ◽  
High Reliability ◽  
Feasibility Studies ◽  
Wide Band ◽  
Power Devices ◽  
Power Module ◽  
Wide Band Gap ◽  
Fast Switching ◽  
Power Modules ◽  
Wide Band Gap Semiconductors

Abstract This paper presents the plan and initial feasibility studies for an Integrated Wire Bondless Power Module (IWPM). Contemporary power modules are moving toward unprecedented levels of power density. The ball has been set rolling by a drastic reduction in the size of bare die power devices themselves owing to the advent of wide band gap semiconductors like silicon carbide (SiC) and gallium nitride (GaN). SiC has capabilities of operating at much higher temperatures and faster switching speeds as compared with its silicon counterparts, while being a fraction of their size. However, electronic packaging technology has not kept pace with these developments. High performance packaging technologies do exist in isolation, but there has been limited success in integrating these disparate efforts into a single high performance package of sufficient reliability. This paper lays the foundation for an electronic package which is designed to completely leverage the benefits of SiC semiconductor technology, with a focus on high reliability and fast switching capability.

A High Current (>1500A) Power Module for High Temperature, High Performance Applications Using SiC TMOS Power Switches

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000402-000406
Author(s):  
B. Passmore ◽  
J. Hornberger ◽  
B. McPherson ◽  
J. Bourne ◽  
R. Shaw ◽  
...  
Keyword(s):  
High Temperature ◽  
High Performance ◽  
Extreme Environment ◽  
Wide Bandgap ◽  
Power Module ◽  
Power Modules ◽  
Power Switches ◽  
Bandgap Semiconductors ◽  
Transition Times ◽  
Switch Position

A high temperature, high performance power module was developed for extreme environment systems and applications to exploit the advantages of wide bandgap semiconductors. These power modules are rated > 1200V, > 100A, > 250 °C, and are designed to house any SiC or GaN device. Characterization data of this power module housing trench MOSFETs is presented which demonstrates an on-state current of 1500 A for a full-bridge switch position. In addition, switching waveforms are presented that exhibit fast transition times.

Low Temperature, Fast Sintering of Micro-Scale Silver Paste for Die Attach for 300°C Applications

2015 ◽  
Vol 2015 (1) ◽  
pp. 000654-000660 ◽  
Author(s):  
Fang Yu ◽  
R. Wayne Johnson ◽  
Michael C. Hamilton
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
High Performance ◽  
High Reliability ◽  
Sintering Process ◽  
Power Devices ◽  
C Storage ◽  
Die Attach ◽  
Increasing Demand ◽  
High Lead

With an increasing demand for SiC and GaN high power devices that operate at high temperature, traditional solder materials are reaching their limitations in performance. In addition, there is a strong desire to eliminate high lead containing solders in Si power device packaging for use over conventional temperature range. Low temperature Ag sintering technology is a promising method for high performance lead-free die attachment. In a previous study, a pressureless sintering process and suitable metallization were demonstrated to provide high reliability die attach by using micro-size Ag sintering. The resulting die attach layer had approximately 30% porosity. In this work, a low temperature pressure-assisted fast sintering process was examined. The porosity was decreased from 30% to 15% with application of a low pressure (7.6MPa) during a one minute sintering process. The shear strength for a 3 mm × 3 mm die was 70 MPa and the 8 mm × 8 mm die could not be sheared off due to a 100 kg shear module force limit. Both the Ag and Au metallization (die and substrate) were studied. Furthermore, a new substrate metallization combination was found that allows the use of Au thick film metallized substrates. High temperature (300 °C) storage tests for up to 2000 hours aging were conducted and results are presented.

High Performance SiC IEMOSFET/SBD Module

2012 ◽  
Vol 717-720 ◽  
pp. 1053-1058 ◽  
Author(s):  
Shinsuke Harada ◽  
Yasuyuki Hoshi ◽  
Yuichi Harada ◽  
Takashi Tsuji ◽  
Akimasa Kinoshita ◽  
...  
Keyword(s):  
High Performance ◽  
High Reliability ◽  
Power Devices ◽  
Power Module ◽  
Low Loss ◽  
Channel Mobility ◽  
Voltage Drops ◽  
Activation Annealing ◽  
P Type ◽  
Channel Region

SiC power module with low loss and high reliability was developed by utilizing IEMOSFET and SBD. The IEMOSFET is the SiC MOSFET with high channel mobility in which the channel region is the p-type carbon-face epitaxial layer with low acceptor concentration. Elemental technologies for the high channel mobility and the high reliability of the gate oxide have been developed to realize the excellent characteristics by the IEMOSFET. The SBD was designed so as to minimize the forward voltage drops and the reverse leakage current. For the fabrication of these SiC power devices, the mass production technology such as gate oxidation, ion implantation and following activation annealing have been also developed.

Low-Temperature Joining Technique as Interconnection Technology for Power Electronics

2011 ◽  
Vol 324 ◽  
pp. 437-440
Author(s):  
Raed Amro
Keyword(s):  
Low Temperature ◽  
Power Electronics ◽  
Life Time ◽  
Junction Temperature ◽  
Limiting Factors ◽  
Power Devices ◽  
Packaging Technology ◽  
Power Cycling ◽  
Power Modules ◽  
Bond Wires

There is a demand for higher junction temperatures in power devices, but the existing packaging technology is limiting the power cycling capability if the junction temperature is increased. Limiting factors are solder interconnections and bond wires. With Replacing the chip-substrate soldering by low temperature joining technique, the power cycling capability of power modules can be increased widely. Replacing also the bond wires and using a double-sided low temperature joining technique, a further significant increase in the life-time of power devices is achieved.

Developments of SiC DioMOS (Diode Integrated SiC MOSFET)

2014 ◽  
Vol 1693 ◽  
Author(s):  
Makoto Kitabatake
Keyword(s):  
Reverse Current ◽  
Power Devices ◽  
Conduction Path ◽  
Large Power ◽  
Growth Technique ◽  
Fast Switching ◽  
Power Modules ◽  
Chip Size ◽  
Safety Operation ◽  
Mos Gate

ABSTRACTSiC power devices can handle large power and high frequency switching beyond the Si power devices. Typical full-SiC power modules are composed of both SiC-MOSFETs and SiC-SBDs to suppress the degradation of Ron of SiC-MOSFET during the bipolar reverse-current flow while there will be unfavorable consequences such as increased material cost, larger area, and larger wiring inductances. Panasonic has proposed the SiC-DioMOS which successfully integrates the unipolar reverse diode without any increase of chip size from the original DIMOS transistor. The SiC-DioMOS utilizes the highly-doped n-type epitaxial channel under the MOS gate for the FET channel and also for the reverse conduction path of the diode. Thickness and concentration of the highly-doped n-typed channel are carefully designed to achieve reasonable Vth of the MOSFET and Vf0 barrier constituting the diode current. The MOSFET and also the MOS-channel diode completely operate under unipolar mode. The SiC-DioMOS with BVds=1700V, Ron=20mΩ、Vth=4.5V, Vf0=0.8V is successively fabricated using the state-of-the-art epitaxial-growth technique. Fast switching of tr=58ns and tf=13ns is confirmed. The SiC-DioMOS meets practical standards for safety operation of high-power fast switching without SiC-SBD.

scholarly journals A Compact 5-nH One-Phase-Leg SiC Power Module for a 600V-60A-40W/cc Inverter

2012 ◽  
Vol 717-720 ◽  
pp. 1233-1236 ◽  
Author(s):  
Kohei Matsui ◽  
Yusuke Zushi ◽  
Yoshinori Murakami ◽  
Satoshi Tanimoto ◽  
Shinji Sato
Keyword(s):  
Output Power ◽  
Small Volume ◽  
Junction Temperature ◽  
High Output Power ◽  
Power Devices ◽  
Power Module ◽  
Dc Voltage ◽  
Power Modules ◽  
High Power Output ◽  
High Output

We have developed a small-volume, high-power-output inverter with a high output power density using SiC power devices. To fully utilize the advantages of SiC power devices, it is necessary to reduce the inductance of the power module. This is done by using a double-layer ceramic substrate, attaining a low inductance of 5 nH. A double pulse test was carried out up to 60 A under a DC voltage of 600 V. The low inductance greatly reduced the surge voltage and the oscillation at the switching transient. The SiC inverter with a volume of 250 cc was assembled using three of the power modules. The cooling performance of the inverter was evaluated at a loss equivalent to an output power of 10 kW, and it was found that the inverter can output 10 kW at a junction temperature (Tj) of about 200°C.

scholarly journals Dual Active Bridge (DAB) DC-DC converter for multilevel propulsion converters for electrical multiple units (EMU)

2018 ◽  
Vol 180 ◽  
pp. 04002
Author(s):  
Marek Adamowicz ◽  
Zbigniew Krzemiński ◽  
Paweł Stec
Keyword(s):  
Input Voltage ◽  
Regenerative Braking ◽  
Power Electronic ◽  
Power Devices ◽  
Medium Frequency ◽  
Pwm Inverter ◽  
Fast Switching ◽  
Dual Active Bridge ◽  
Power Modules ◽  
Multiple Units

Semiconductor power devices made from silicon carbide (SiC) reached a level of technology enabling their widespread use in power converters. Two different approaches to implementation of modern traction converters in electric multiple units (EMU) have been presented in recent years: (i) 3.3-kV SiC MOSFET-based three-level PWM inverter with regenerative braking and (ii) 6.5-kV IGBT-based fourquadrant power electronic traction transformer (PETT). The former has successfully reached optimized dimensions and efficiency but still requires a bulky line frequency transformer for multisystem applications. The latter characterizes inherent galvanic isolation from AC traction, which is realized by cascaded system of power electronic cells containing medium frequency transformers (MFT). The downsizing of the 6.5-kV IGBT-based cells is, however, problematic. The present paper proposes a different approach, that involves the use of a fast switching 1.2-kV SiC MOSFETS. The SiC-based PETT proposed in the paper is dedicated first for the DC traction. For multi-system application the input voltage of the proposed PETT can be adjusted using weight-optimized adjusting autotransformer. Thanks to utilization of fast-switching SiCbased power modules the weight and size of the power electronic cells can be optimized in a convenient way.

scholarly journals Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics

Energies ◽  
2020 ◽  
Vol 13 (15) ◽  
pp. 3802 ◽  
Author(s):  
Maosheng Zhang ◽  
Na Ren ◽  
Qing Guo ◽  
Kuang Sheng
Keyword(s):  
High Power ◽  
Power Module ◽  
Insulated Gate Bipolar Transistor ◽  
Switching Performance ◽  
Fast Switching ◽  
Turn On ◽  
Power Modules ◽  
Voltage Plateau ◽  
Source Voltage ◽  
Bus Voltage

The SiC (silicon carbide) high-power module has great potential to replace the IGBT (insulated gate bipolar transistor) power module in high-frequency and high-power applications, due to the superior properties of fast switching and low power loss, however, when the SiC high-power module operates under inappropriate conditions, the advantages of the SiC high-power module will be probably eliminated. In this paper, four kinds of SiC high-power modules are fabricated to investigate fast switching performance. The variations in characteristics of drain-source voltage at turn-on transient under the combined conditions of multiple factors are studied. A characteristic of voltage plateau is observed from the drain-source voltage waveform at turn-on transient in the experiments, and the characteristic is reproduced by simulation. The mechanism behind the voltage plateau is studied, and it is revealed that the characteristic of drain-source voltage plateau is a reflection of the miller plateau effect of gate-source voltage on drain-source voltage under the combined conditions of fast turn-on speed and low DC bus voltage, while the different values of drain-source voltage plateau are attributed to the discrepancy of structure between upper-side and lower-side in the corresponding partial path of the drain circuit loop inside the module, with the standard 62 mm package outline.

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