A High Current (>1500A) Power Module for High Temperature, High Performance Applications Using SiC TMOS Power Switches

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000402-000406
Author(s):  
B. Passmore ◽  
J. Hornberger ◽  
B. McPherson ◽  
J. Bourne ◽  
R. Shaw ◽  
...  
Keyword(s):  
High Temperature ◽  
High Performance ◽  
Extreme Environment ◽  
Wide Bandgap ◽  
Power Module ◽  
Power Modules ◽  
Power Switches ◽  
Bandgap Semiconductors ◽  
Transition Times ◽  
Switch Position

A high temperature, high performance power module was developed for extreme environment systems and applications to exploit the advantages of wide bandgap semiconductors. These power modules are rated > 1200V, > 100A, > 250 °C, and are designed to house any SiC or GaN device. Characterization data of this power module housing trench MOSFETs is presented which demonstrates an on-state current of 1500 A for a full-bridge switch position. In addition, switching waveforms are presented that exhibit fast transition times.

High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000297-000304 ◽  
Author(s):  
B. Reese ◽  
B. McPherson ◽  
R. Shaw ◽  
J. Hornberger ◽  
R. Schupbach ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Performance ◽  
Single Phase ◽  
University Of Arkansas ◽  
Power Module ◽  
Power Modules ◽  
Gate Driver ◽  
Switch Position ◽  
The University

Arkansas Power Electronics International, Inc., in collaboration with the University of Arkansas and Rohm, Ltd., have developed a high-temperature, high-performance Silicon-Carbide (SiC) based power module with integrated gate driver. This paper presents a description of the single phase half-bridge module containing eight Rohm 30 A SiC DMOSFETs in parallel per switch position. The electrical and thermal performance of the system under power is also presented.

Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes

2018 ◽  
Vol 924 ◽  
pp. 302-305
Author(s):  
Muhammad Haroon Rashid ◽  
Ants Koel ◽  
Toomas Rang
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Frequency ◽  
High Performance ◽  
Light Emitting Diode ◽  
Wide Bandgap ◽  
Photovoltaic Device ◽  
Light Emitting ◽  
Current Voltage ◽  
Bandgap Semiconductors

In the last decade, silicon carbide (SiC) has gained a remarkable position among wide bandgap semiconductors due to its high temperature, high frequency, and high power electronics applications. SiC heterostructures, based on the most prominent polytypes like 3C-SiC, 4H-SiC and 6H-SiC, exhibit distinctive electrical and physical properties that make them promising candidates for high performance optoelectronic applications. The results of simulations of nn-junction 3C-4H/SiC and 6H-4H/SiC heterostructures, at the nanoscale and microscale, are presented in this paper. Nanoscale devices are simulated with QuantumWise Atomistix Toolkit (ATK) software, and microscale devices are simulated with Silvaco TCAD software. Current-voltage (IV) characteristics of nanoscale and microscale simulated devices are compared and discussed. The effects of non-ideal bonding at the heterojunction interface due to lattice misplacements (axial displacement of bonded wafers) are studied using the ATK simulator. These simulations lay the groundwork for the experiments, which are targeted to produce either a photovoltaic device or a light-emitting diode (working in the ultraviolet or terahertz spectra), by direct bonding of SiC polytypes.

A High Performance Power Module with >10kV capability to Characterize and Test In Situ SiC Devices at >200°C Ambient

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000149-000158
Author(s):  
Xin Zhao ◽  
Haotao Ke ◽  
Yifan Jiang ◽  
Adam Morgan ◽  
Yang Xu ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Performance ◽  
Power Module ◽  
Module Design ◽  
Power Modules ◽  
Operational Temperature ◽  
Full Power ◽  
Temperature Applications

Abstract This paper presents design, fabrication and characterization details of a 10kV power module package for >200°C ambient temperature applications. Electrical simulations were performed to confirm the module design, and that the electric field distribution throughout the module did not exceed dielectric capabilities of components and materials. A suitable copper etching process was demonstrated for DBC layout, and a high melting point Sn/Pb/Ag solder reflow process was developed for device and component attachment. To monitor the operational temperature of the module, a thermistor was integrated onto the substrate. A new silicone gel, having a working temperature up to 210°C, was evaluated and selected for encapsulation and, of great importance, for passivation of high voltage (10kV) SiC dies. An additive manufacturing ‘Design Process’ was developed and applied to printing the housings, molds, and test fixtures. Also, cleaning processes were evaluated for every step in the fabrication process. To verify performance of the modules, mechanical dies were mounted on the substrates, and a high temperature testing setup built to characterize the modules at high temperature. Measurements indicated that the module can operate up to 12kV within 25°C to 225°C, with less than 0.1 μA leakage current. The packaging was used for full-power characterization of developmental 10kV SiC diodes, and proved that the power module packaging satisfied all requirements for high voltage and high temperature applications. This work successfully validated the processes for creating high voltage (>10 kV) and high temperature (>200°C) power modules.

High Temperature Silicon Carbide Power Modules for High Performance Systems

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000159-000166 ◽  
Author(s):  
J. Hornberger ◽  
B. McPherson ◽  
J. Bourne ◽  
R. Shaw ◽  
E. Cilio ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Speed ◽  
High Performance ◽  
High Reliability ◽  
Extreme Environment ◽  
High Energy ◽  
Energy Applications ◽  
Power Modules ◽  
Reliability Systems

The demands of modern high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of silicon carbide (SiC) are well known, including high temperature operation, high voltage blocking capability, high speed switching, and high energy efficiency. In this discussion, APEI, Inc. presents two newly developed high performance SiC power modules for extreme environment systems and applications. These power modules are rated to 1200V, are operational at currents greater than 100A, can perform at temperatures in excess of 250 °C, and are designed to house various SiC devices, including MOSFETs, JFETs, or BJTs. One newly developed module is designed for high performance, ultra-high reliability systems such as aircraft and spacecraft, and features a hermetically sealed package with a ring seal technology capable of sustaining temperatures in excess of 400°C. The second module is designed for high performance commercial and industrial systems such as hybrid electric vehicles or renewable energy applications, implements a novel ultra-low parasitic packaging approach that enables high switching frequencies in excess of 100 kHz, and weighs in at just over 130 grams (offering ~5× mass reduction and ~3× size reduction in comparison with industry standard power brick packaging technology). It is configurable as either a half or full bridge converter. In this discussion, APEI, Inc. introduces these products and presents practical testing of each.

The Design and Evaluation of an Integrated Wire Bond-less Power Module using a Low Temperature Co-fired Ceramic Interposer

2016 ◽  
Vol 13 (4) ◽  
pp. 169-175
Author(s):  
Sayan Seal ◽  
Michael D. Glover ◽  
H. Alan Mantooth
Keyword(s):  
Low Temperature ◽  
High Performance ◽  
High Reliability ◽  
Feasibility Studies ◽  
Power Devices ◽  
Power Module ◽  
Fast Switching ◽  
Wire Bond ◽  
Power Modules ◽  
Bandgap Semiconductors

This article presents the plan and initial feasibility studies for an Integrated Wire Bond-less Power Module. Contemporary power modules are moving toward unprecedented levels of power density. The ball has been set rolling by a drastic reduction in the size of bare die power devices owing to the advent of wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride. SiC has capabilities of operating at much higher temperatures and faster switching speeds compared with its silicon counterparts, while being a fraction of their size. However, electronic packaging technology has not kept pace with these developments. High-performance packaging technologies do exist in isolation, but there has been limited success in integrating these disparate efforts into a single high-performance package of sufficient reliability. This article lays the foundation for an electronic package designed to completely leverage the benefits of SiC semiconductor technology, with a focus on high reliability and fast switching capability. The interconnections between the gate drive circuitry and the power devices were implemented using a low temperature cofired ceramic interposer.

Comparative Study on Power Module Architectures for Modularity and Scalability

2020 ◽  
Vol 142 (4) ◽  
Author(s):  
Mei-Chien Lu
Keyword(s):  
Power Electronics ◽  
Hybrid Electric Vehicle ◽  
Wide Bandgap ◽  
Department Of Energy ◽  
Power Module ◽  
Current Trends ◽  
Power Modules ◽  
Bandgap Semiconductors ◽  
Sustainability Challenges

Abstract Silicon carbide (SiC) wide bandgap power electronics are being applied in hybrid electric vehicle (HEV) and electrical vehicles (EV). The Department of Energy (DOE) has set target performance goals for 2025 to promote EV and HEV as a means of carbon emission reduction and long-term sustainability. Challenges include higher expectations on power density, performance, efficiency, thermal management, compactness, cost, and reliability. This study will benchmark state of the art silicon and SiC technologies. Power modules used in commercial traction inverters are analyzed for their within-package first-level interconnect methods, module architecture, and integration with cooling structure. A few power module package architectures from both industry-adopted standards and proposed patented technologies are compared in modularity and scalability for integration into inverters. The current trends of power module architectures and their integration into inverter are also discussed. The development of an eco-system to support the wide bandgap semiconductors-based power electronics is highlighted as an ongoing challenge.

High Temperature Silicon Carbide Power Modules for High Performance Systems

2012 ◽  
Vol 717-720 ◽  
pp. 1219-1224 ◽  
Author(s):  
Alexander B. Lostetter ◽  
J. Hornberger ◽  
B. McPherson ◽  
J. Bourne ◽  
R. Shaw ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Speed ◽  
High Performance ◽  
Extreme Environment ◽  
High Energy ◽  
Power Modules ◽  
High Performance Systems ◽  
Silicon Based ◽  
High Speed Switching

The demands of modern high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of silicon carbide (SiC) are well known, including high temperature operation, high voltage blocking capability, high speed switching, and high energy efficiency. In this discussion, APEI, Inc. presents two newly developed high performance SiC power modules for extreme environment systems and applications. These power modules are rated to 1200V, are operational at currents greater than 100A, can perform at temperatures in excess of 250 °C, and are designed to house various SiC devices, including MOSFETs, JFETs, or BJTs.

Advanced Materials for High Temperature, High Performance, Wide Bandgap Power Modules

2015 ◽  
Vol 45 (1) ◽  
pp. 245-254 ◽  
Author(s):  
Chad B. O’Neal ◽  
Brad McGee ◽  
Brice McPherson ◽  
Jennifer Stabach ◽  
Richard Lollar ◽  
...  
Keyword(s):  
High Temperature ◽  
High Performance ◽  
Wide Bandgap ◽  
Advanced Materials ◽  
Power Modules

A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode

2015 ◽  
Vol 2015 (1) ◽  
pp. 000359-000364 ◽  
Author(s):  
Adam Morgan ◽  
Ankan De ◽  
Haotao Ke ◽  
Xin Zhao ◽  
Kasunaidu Vechalapu ◽  
...  
Keyword(s):  
High Voltage ◽  
Thermal Stresses ◽  
Wide Bandgap ◽  
Power Module ◽  
Cost Performance ◽  
Power Semiconductor ◽  
Current Switch ◽  
Power Modules ◽  
Voltage Stress ◽  
3D Printed

The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencies within the kHz range. The improved voltage blocking capability reduces the number of series connected devices within the circuit, but challenges power module designers to create packages capable of managing the electrical, mechanical, and thermal stresses produced during operation. The non-sinusoidal nature of this stress punctuated with extremely fast changes in voltage and current, with respect to time, leads to non-ideal electrical and thermal performance. An optimized power semiconductor series current switch is fabricated using an IGBT (6500V/25A die) and SiC JBS Diode (6000V/10A), packaged into a 3D printed housing, to create a composite series current switch package (CSCSP). The final chosen device configuration was simulated and verified in an ANSYS software package. Also, the thermal behavior of such a composite package was simulated and verified using COMSOL. The simulated results were then compared with empirically obtained data, in order to ensure that the thermal ratings of the power devices were not exceeded; directly affecting the maximum attainable frequency of operation for the CSCSP. Both power semiconductor series current switch designs are tested and characterized under hard switching conditions. Special attention is given to ensure the voltage stress across the devices is significantly reduced.

Characterization of Silicone Gel for High Temperature Encapsulation in High Voltage WBG Power Modules

2017 ◽  
Vol 2017 (1) ◽  
pp. 000312-000317
Author(s):  
Adam Morgan ◽  
Xin Zhao ◽  
Jason Rouse ◽  
Douglas Hopkins
Keyword(s):  
High Temperature ◽  
Thermal Aging ◽  
Dielectric Strength ◽  
Material Structure ◽  
Power Module ◽  
Leakage Currents ◽  
Test Vehicle ◽  
Silicone Gel ◽  
Power Modules ◽  
Silicone Gels

Abstract One of the most important advantages of wide-bandgap (WBG) devices is high operating temperature (>200°C). Power modules have been recognized as an enabling technology for many industries, such as automotive, deep-well drilling, and on-engine aircraft controls. These applications are all required to operate under some form of extreme environmental conditions. Silicone gels are the most popular solution for the encapsulation of power modules due to mechanical stress relief enabled by a low Young's modulus, electrical isolation achieved due to high dielectric strength, and a dense material structure that protects encapsulated devices against moisture, chemicals, contaminants, etc. Currently, investigations are focused on development of silicone gels with long-term high-temperature operational capability. The target is to elevate the temperature beyond 200°C to bolster adoption of power modules in the aforementioned applications. WACKER has developed silicone gels with ultra-high purity levels of < 2ppm of total residual ions combined with > 200°C thermal stability. In this work, leakage currents through a group of WACKER Chemie encapsulant silicone gels (A, B, C) are measured and compared for an array of test modules after exposure to a 12kV voltage sweep at room temperature up to 275°C, and thermal aging at 150°C for up to more than 700 hours. High temperature encapsulants capable of producing leakage currents less than 1μA, are deemed acceptable at the given applied blocking voltage and thermal aging soak temperature. To fully characterize the high temperature encapsulants, silicone gel A, B, and C, an entire high temperature module is used as a common test vehicle. The power module test vehicle includes: 12mil/40mil/12mil Direct Bonded Copper (DBC) substrates, gel under test (GUT), power and Kelvin connected measurement terminals, thermistor thermal sensor to sense real-time temperature, and 12mil Al bonding wires to manage localized high E-Fields around wires. It was ultimately observed that silicone gels B and C were capable of maintaining low leakage current capabilities under 12kV and 275°C conditions, and thus present themselves as strong candidates for high-temperature WBG device power modules and packaging.

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