2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
Latest Publications

TOTAL DOCUMENTS

110

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781479962594, 9781479962617

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Automatic layout optimization of DMOS transistors for lower peak temperatures and increased energy capability

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) ◽

10.1109/ispsd.2015.7123421 ◽

2015 ◽

Cited By ~ 2

Author(s):

Timo Zawischka ◽

Martin Pfost

Keyword(s):

Layout Optimization ◽

Automatic Layout

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The optimised design and characterization of 1200 V / 2.0 mΩ cm2 4H-SiC V-groove trench MOSFETs

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) ◽

10.1109/ispsd.2015.7123395 ◽

2015 ◽

Cited By ~ 4

Author(s):

Kosuke Uchida ◽

Yu Saitoh ◽

Toru Hiyoshi ◽

Takeyoshi Masuda ◽

Keiji Wada ◽

...

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Fully-isolated NLDMOS behavior investigation during reverse recovery of parasitic diodes

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) ◽

10.1109/ispsd.2015.7123410 ◽

2015 ◽

Author(s):

Nan-Ying Yang ◽

Ming-Cheng Lin ◽

Haw-Yun Wu ◽

C. B. Wu ◽

L. Chu ◽

...

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SiC reversely switched dynistor (RSD) for pulse power application

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) ◽

10.1109/ispsd.2015.7123447 ◽

2015 ◽

Cited By ~ 5

Author(s):

Lin Liang ◽

Alex Q. Huang ◽

Cheng Liu ◽

Wenguang Chang

Keyword(s):

Pulse Power ◽

Power Application

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Ultra low inductance power module for fast switching SiC power devices

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) ◽

10.1109/ispsd.2015.7123452 ◽

2015 ◽

Cited By ~ 13

Author(s):

Kazuto Takao ◽

Shinya Kyogoku

Keyword(s):

Power Devices ◽

Power Module ◽

Fast Switching

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High voltage thick SOI-LIGBT with high current density and latch-up immunity

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) ◽

10.1109/ispsd.2015.7123416 ◽

2015 ◽

Cited By ~ 17

Author(s):

Jing Zhu ◽

Weifeng Sun ◽

Long Zhang ◽

Yicheng Du ◽

Hui Yu ◽

...

Keyword(s):

High Voltage ◽

Current Density ◽

High Current Density ◽

High Current ◽

Latch Up

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Lifetime analysis of power modules with new packaging technologies

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) ◽

10.1109/ispsd.2015.7123454 ◽

2015 ◽

Cited By ~ 8

Author(s):

N. Heuck ◽

R. Bayerer ◽

S. Krasel ◽

F. Otto ◽

R. Speckels ◽

...

Keyword(s):

Power Modules ◽

Lifetime Analysis

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Modeling spatial and energy oxide trap distribution responsible for NBTI in p-channel power U-MOSFETs

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) ◽

10.1109/ispsd.2015.7123412 ◽

2015 ◽

Cited By ~ 2

Author(s):

Andrea N. Tallarico ◽

Enrico Sangiorgi ◽

Claudio Fiegna ◽

Paolo Magnone ◽

Giacomo Barletta ◽

...

Keyword(s):

Channel Power ◽

Oxide Trap

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Optimization of a high-voltage MOSFET in ultra-thin 14nm FDSOI technology

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) ◽

10.1109/ispsd.2015.7123392 ◽

2015 ◽

Cited By ~ 3

Author(s):

A. Litty ◽

S. Ortolland ◽

D. Golanski ◽

S. Cristoloveanu

Keyword(s):

High Voltage

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95% DC-DC conversion efficiency by novel trench power MOSFET with dual channel structure to cut body diode losses

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) ◽

10.1109/ispsd.2015.7123390 ◽

2015 ◽

Cited By ~ 2

Author(s):

O. Haberlen ◽

M. Polzl ◽

J. Schoiswohl ◽

M. Rosch ◽

S. Leomant ◽

...

Keyword(s):

Conversion Efficiency ◽

Channel Structure ◽

Power Mosfet ◽

Dual Channel

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2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Automatic layout optimization of DMOS transistors for lower peak temperatures and increased energy capability

The optimised design and characterization of 1200 V / 2.0 mΩ cm2 4H-SiC V-groove trench MOSFETs

Fully-isolated NLDMOS behavior investigation during reverse recovery of parasitic diodes

SiC reversely switched dynistor (RSD) for pulse power application

Ultra low inductance power module for fast switching SiC power devices

High voltage thick SOI-LIGBT with high current density and latch-up immunity

Lifetime analysis of power modules with new packaging technologies

Modeling spatial and energy oxide trap distribution responsible for NBTI in p-channel power U-MOSFETs

Optimization of a high-voltage MOSFET in ultra-thin 14nm FDSOI technology

95% DC-DC conversion efficiency by novel trench power MOSFET with dual channel structure to cut body diode losses

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
Latest Publications