activation annealing Latest Research Papers

Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2020.105491 ◽

2021 ◽

Vol 122 ◽

pp. 105491

Author(s):

Maciej A. Kozubal ◽

Pągowska Karolina ◽

Taube Andrzej ◽

Kruszka Renata ◽

Sankowska Iwona ◽

...

Keyword(s):

Ohmic Contact ◽

Annealing Temperature ◽

Contact Formation ◽

Activation Annealing ◽

Ohmic Contact Formation ◽

Implantation Fluence

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Enhancing the Room Temperature Al Implantation Dose by Double Implantation and Activation Annealing

2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) ◽

10.1109/sslchinaifws51786.2020.9308692 ◽

2020 ◽

Author(s):

Jiaxu GAO ◽

Chuangang LI ◽

Xuan ZHANG ◽

Tao JU ◽

Liguo Zhang ◽

...

Keyword(s):

Room Temperature ◽

Implantation Dose ◽

Activation Annealing

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Bias stress instability of LTPS TFTs on flexible substrate with activation annealing temperature

Microelectronics Reliability ◽

10.1016/j.microrel.2020.113940 ◽

2020 ◽

Vol 113 ◽

pp. 113940

Author(s):

Soonkon Kim ◽

Hyojung Kim ◽

Kihwan Kim ◽

Pyungho Choi ◽

Byoungdeog Choi

Keyword(s):

Annealing Temperature ◽

Flexible Substrate ◽

Bias Stress ◽

Activation Annealing

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Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abac41 ◽

2020 ◽

Vol 59 (9) ◽

pp. 096502

Author(s):

Masamichi Akazawa ◽

Ryo Kamoshida

Keyword(s):

Fermi Level ◽

Simultaneous Occurrence ◽

Fermi Level Pinning ◽

Activation Annealing ◽

Surface Fermi Level ◽

Ion Implanted

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Improving mobility of silicon metal-oxide–semiconductor devices for quantum dots by high vacuum activation annealing

EPL (Europhysics Letters) ◽

10.1209/0295-5075/130/27001 ◽

2020 ◽

Vol 130 (2) ◽

pp. 27001

Author(s):

Ke Wang ◽

Hai-Ou Li ◽

Gang Luo ◽

Xin Zhang ◽

Fang-Ming Jing ◽

...

Keyword(s):

Quantum Dots ◽

Metal Oxide ◽

Semiconductor Devices ◽

High Vacuum ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Activation Annealing

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Flatband Voltage Tuning of HfSiON-Based Gate Stacks: Impact of High Temperature Activation Annealing and LaOx Capping Layers

ECS Transactions ◽

10.1149/1.3572320 ◽

2019 ◽

Vol 35 (4) ◽

pp. 805-813 ◽

Cited By ~ 2

Author(s):

Rachid Boujamaa ◽

Sylvain Baudot ◽

Eugénie Martinez ◽

Olivier Renault ◽

Blanka Detlefs ◽

...

Keyword(s):

High Temperature ◽

Gate Stacks ◽

Flatband Voltage ◽

Temperature Activation ◽

Activation Annealing ◽

Voltage Tuning

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Defects and electrical properties in Al-implanted 4H-SiC after activation annealing

Chinese Physics B ◽

10.1088/1674-1056/ab3cc2 ◽

2019 ◽

Vol 28 (10) ◽

pp. 106101

Author(s):

Yi-Dan Tang ◽

Xin-Yu Liu ◽

Zheng-Dong Zhou ◽

Yun Bai ◽

Cheng-Zhan Li

Keyword(s):

Electrical Properties ◽

Activation Annealing

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Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

physica status solidi (b) ◽

10.1002/pssb.201900367 ◽

2019 ◽

Vol 257 (2) ◽

pp. 1900367 ◽

Cited By ~ 2

Author(s):

Masamichi Akazawa ◽

Ryo Kamoshida ◽

Shunta Murai ◽

Tetsuo Narita ◽

Masato Omori ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dosage Increase ◽

Activation Annealing ◽

Ion Implanted

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Effects of Deep Level States Generated by Mg-Ion Implantation on Electrical Properties of GaN MOS Diodes before Activation Annealing

10.7567/ssdm.2019.ps-4-16 ◽

2019 ◽

Author(s):

R. Kamoshida ◽

S. Murai ◽

M. Akazawa

Keyword(s):

Electrical Properties ◽

Ion Implantation ◽

Deep Level ◽

Activation Annealing

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Investigation of Impact of Dosage on Electrical Properties of Mg-Ion-Implanted GaN before Activation Annealing Using MOS Structures

2019 Compound Semiconductor Week (CSW) ◽

10.1109/iciprm.2019.8819158 ◽

2019 ◽

Author(s):

Ryo Kamoshida ◽

Kei Uetake ◽

Shunta Murai ◽

Masamichi Akazawa

Keyword(s):

Electrical Properties ◽

Activation Annealing ◽

Mos Structures ◽

Ion Implanted

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activation annealing
Recently Published Documents

TOTAL DOCUMENTS

H-INDEX

Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies

Enhancing the Room Temperature Al Implantation Dose by Double Implantation and Activation Annealing

Bias stress instability of LTPS TFTs on flexible substrate with activation annealing temperature

Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing

Improving mobility of silicon metal-oxide–semiconductor devices for quantum dots by high vacuum activation annealing

Flatband Voltage Tuning of HfSiON-Based Gate Stacks: Impact of High Temperature Activation Annealing and LaOx Capping Layers

Defects and electrical properties in Al-implanted 4H-SiC after activation annealing

Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

Effects of Deep Level States Generated by Mg-Ion Implantation on Electrical Properties of GaN MOS Diodes before Activation Annealing

Investigation of Impact of Dosage on Electrical Properties of Mg-Ion-Implanted GaN before Activation Annealing Using MOS Structures

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activation annealingRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies

Enhancing the Room Temperature Al Implantation Dose by Double Implantation and Activation Annealing

Bias stress instability of LTPS TFTs on flexible substrate with activation annealing temperature

Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing

Improving mobility of silicon metal-oxide–semiconductor devices for quantum dots by high vacuum activation annealing

Flatband Voltage Tuning of HfSiON-Based Gate Stacks: Impact of High Temperature Activation Annealing and LaOx Capping Layers

Defects and electrical properties in Al-implanted 4H-SiC after activation annealing

Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

Effects of Deep Level States Generated by Mg-Ion Implantation on Electrical Properties of GaN MOS Diodes before Activation Annealing

Investigation of Impact of Dosage on Electrical Properties of Mg-Ion-Implanted GaN before Activation Annealing Using MOS Structures

activation annealing
Recently Published Documents