scholarly journals Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics

Energies ◽  
2020 ◽  
Vol 13 (15) ◽  
pp. 3802 ◽  
Author(s):  
Maosheng Zhang ◽  
Na Ren ◽  
Qing Guo ◽  
Kuang Sheng
Keyword(s):  
High Power ◽  
Power Module ◽  
Insulated Gate Bipolar Transistor ◽  
Switching Performance ◽  
Fast Switching ◽  
Turn On ◽  
Power Modules ◽  
Voltage Plateau ◽  
Source Voltage ◽  
Bus Voltage

The SiC (silicon carbide) high-power module has great potential to replace the IGBT (insulated gate bipolar transistor) power module in high-frequency and high-power applications, due to the superior properties of fast switching and low power loss, however, when the SiC high-power module operates under inappropriate conditions, the advantages of the SiC high-power module will be probably eliminated. In this paper, four kinds of SiC high-power modules are fabricated to investigate fast switching performance. The variations in characteristics of drain-source voltage at turn-on transient under the combined conditions of multiple factors are studied. A characteristic of voltage plateau is observed from the drain-source voltage waveform at turn-on transient in the experiments, and the characteristic is reproduced by simulation. The mechanism behind the voltage plateau is studied, and it is revealed that the characteristic of drain-source voltage plateau is a reflection of the miller plateau effect of gate-source voltage on drain-source voltage under the combined conditions of fast turn-on speed and low DC bus voltage, while the different values of drain-source voltage plateau are attributed to the discrepancy of structure between upper-side and lower-side in the corresponding partial path of the drain circuit loop inside the module, with the standard 62 mm package outline.

Switching SiC Devices Faster and More Efficient Using a DBC Mounted Terminal Decoupling Si-RC Element

2017 ◽  
Vol 897 ◽  
pp. 689-692
Author(s):  
Stefan Matlok ◽  
Tobias Erlbacher ◽  
Florian Krach ◽  
Bernd Eckardt
Keyword(s):  
Development Effort ◽  
Power Losses ◽  
Power Module ◽  
Large Power ◽  
Chip Area ◽  
Switching Performance ◽  
Fast Switching ◽  
Power Modules ◽  
Power Switches ◽  
Recent Developments

Large power modules include several parallel mounted chips per switch to raise active area and current. By the electro-mechanical connection interface, the resulting large parasitic inductance is a huge problem especially for very fast switching SiC devices. This challenge is handled by many approaches, but these recent developments require additional development effort along all aspects of the power module, e.g. smart DBC layout, low inductive top side metallization, special terminal designs or additional pins. In this paper we demonstrate an approach to enable excellent switching performance with con-ventional power module technologies: By using a recently developed monolithic silicon RC (Si-RC) element to decouple the bus bar, this problem can be solved in a very efficient way. The Si-RC element is assembled directly adjacent to the power switches on the DBC. This allows a significant reduction of the SiC chip area by minimizing the power losses caused by the switching transients from the parasitic DC-link and module inductances.

Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module

2021 ◽  
Author(s):  
Hayden Carlton ◽  
John Harris ◽  
Alexis Krone ◽  
David Huitink ◽  
Md Maksudul Hossain ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Heat Removal ◽  
Electrical Characterization ◽  
Thermal Characterization ◽  
Design Strategies ◽  
Power Module ◽  
Parasitic Inductance ◽  
Switching Performance ◽  
Power Modules ◽  
Primary Means

Abstract The need for high power density electrical converters/inverters dominates the power electronics realm, and wide bandgap semiconducting materials, such as gallium nitride (GaN), provide the enhanced material properties necessary to drive at higher switching speeds than traditional silicon. However, lateral GaN devices introduce packaging difficulties, especially when attempting a double-sided cooled solution. Herein, we describe optimization efforts for a 650V/30A, GaN half-bridge power module with an integrated gate driver and double-sided cooling capability. Two direct bonded copper (DBC) substrates provided the primary means of heat removal from the module. In addition to the novel topology, the team performed electrical/thermal co-design to increase the multi-functionality of module. Since a central PCB comprised the main power loop, the size and geometry of the vias and copper traces was analyzed to determine optimal functionality in terms of parasitic inductance and thermal spreading. Thermally, thicker copper layers and additional vias introduced into the PCB also helped reduce hot spots within the module. Upon fabrication of the module, it underwent electrical characterization to determine switching performance, as well as thermal characterization to experimentally measure the total module’s thermal resistance. The team successfully operated the module at 400 V, 30 A with a power loop parasitic inductance of 0.89 nH; experimental thermal measurements also indicated the module thermal resistance to be 0.43 C/W. The overall utility of the design improved commensurately by introducing simple, yet effective electrical/thermal co-design strategies, which can be applied to future power modules.

scholarly journals Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules

2019 ◽  
Author(s):  
Erick Gutierrez ◽  
Kevin Lin ◽  
Douglas DeVoto ◽  
Patrick McCluskey
Keyword(s):  
Thermal Cycling ◽  
Failure Modes ◽  
Rapid Determination ◽  
Degradation Process ◽  
In Situ Monitoring ◽  
Power Module ◽  
Insulated Gate Bipolar Transistor ◽  
Die Attach ◽  
Power Modules

Abstract Insulated gate bipolar transistor (IGBT) power modules are devices commonly used for high-power applications. Operation and environmental stresses can cause these power modules to progressively degrade over time, potentially leading to catastrophic failure of the device. This degradation process may cause some early performance symptoms related to the state of health of the power module, making it possible to detect reliability degradation of the IGBT module. Testing can be used to accelerate this process, permitting a rapid determination of whether specific declines in device reliability can be characterized. In this study, thermal cycling was conducted on multiple power modules simultaneously in order to assess the effect of thermal cycling on the degradation of the power module. In-situ monitoring of temperature was performed from inside each power module using high temperature thermocouples. Device imaging and characterization were performed along with temperature data analysis, to assess failure modes and mechanisms within the power modules. While the experiment aimed to assess the potential damage effects of thermal cycling on the die attach, results indicated that wire bond degradation was the life-limiting failure mechanism.

A High Precision IGBT Macro-Model for Switching Simulations

2016 ◽  
Vol 698 ◽  
pp. 109-117
Author(s):  
Masaki Kazumi ◽  
Hitoshi Aoki ◽  
Yukiko Arai ◽  
Shunichiro Todoroki ◽  
Takuya Totsuka ◽  
...  
Keyword(s):  
High Power ◽  
Source Code ◽  
Small Signal ◽  
Electrical Circuits ◽  
Macro Model ◽  
Insulated Gate Bipolar Transistor ◽  
Turn On ◽  
Spice Model ◽  
Test Circuit ◽  
Off Time

In this research, a novel SPICE model of an Insulated-Gate-Bipolar-Transistor (IGBT), which is often used to handle high power signals in automotive electrical circuits, has been developed. The model consists of basic SPICE elements. Thus, it can be used in any SPICE-compatible simulators without any source code modification. This paper presents the results of DC, small signal AC, and transient characteristics considering the temperature dependence by using the proposed IGBT macro-model for SPICE. In addition, turn-on and -off time verifications are presented by using a switching test circuit provided by an IGBT manufacturer.

Comparative Evaluation and Analysis of Gate Driver Impacts on a SiC MOSFET-Gate Driver Integrated Power Module

2017 ◽  
Vol 2017 (1) ◽  
pp. 000247-000251
Author(s):  
Liqi Zhang ◽  
Suxuan Guo ◽  
Pengkun Liu ◽  
Alex Q. Huang
Keyword(s):  
Comparative Evaluation ◽  
Switching Frequency ◽  
Common Source ◽  
Power Module ◽  
Switching Speed ◽  
Switching Performance ◽  
Switching Losses ◽  
Power Modules ◽  
Gate Driver ◽  
The Common

Abstract SiC MOSFET-gate driver integrated power module is proposed to provide ultra-low stray inductance compared to traditional TO-247 or TO-220 packages. Kelvin connection eliminates the common source stray inductance and zero external gate resistor enables faster switching. This module can be operated at MHz switching frequency for high power applications with lower switching losses than discrete packages. Two different gate drivers and two different SiC MOSFETs are grouped and integrated into three integrated power modules. Comparative evaluation and analysis of gate driver impacts on switching speed of SiC MOSFET is shown in detail. The paper provides an insight of the gate driver impacts on the device switching performance in an integrated power module.

Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET

2008 ◽  
Vol 600-603 ◽  
pp. 1067-1070 ◽  
Author(s):  
Rajesh Kumar Malhan ◽  
S.J. Rashid ◽  
Mitsuhiro Kataoka ◽  
Yuuichi Takeuchi ◽  
Naohiro Sugiyama ◽  
...  
Keyword(s):  
Switching Performance ◽  
Fast Switching ◽  
Turn On ◽  
Switching Losses ◽  
Dual Gate ◽  
Layer Resistance ◽  
Heavily Doped ◽  
Effect Transistor ◽  
P Type ◽  
State Resistance

Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5 – 1.8kV was realized at VGS = −5V for normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt. Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong influence of channel doping conditions on the turn-on switching performance. The fast switching normally-off JFET devices require heavily doped narrow JFET channel design.

Next Generation High Power Electronic Modules Based on Embedded Power Semiconductors

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 000694-000719 ◽  
Author(s):  
Lars Böttcher ◽  
S. Karaszkiewicz ◽  
D. Manessis ◽  
Eckart Hoene ◽  
A. Ostmann
Keyword(s):  
High Power ◽  
Cost Effective ◽  
Switching Frequency ◽  
Research Projects ◽  
Power Module ◽  
Large Power ◽  
Power Semiconductors ◽  
Power Modules ◽  
3D Assembly ◽  
Bond Wires

The spectrum of conventional power electronics packaging reaches from SMD packages for power chips to large power modules. In most of these packages the power semiconductors are connected by bond wires, resulting in large resistances and parasitic inductances. Power chip packages have to carry semiconductors with increasing current densities. Conventional wire bonds are limiting their performance. Today's power modules are based on DCB (Direct Copper bonded) ceramic substrates. IGBT switches are mounted onto the ceramic and their top side contacts are connected by thick Al wires. This allows one wiring layer only and makes an integration of driver chips very difficult. Additionally bond wires result in a high stray inductance which limits the switching frequency. Especially for the use of ultra-fast switching semiconductors, like SiC and GaN, it is very difficult to realize low inductive packages. The embedding of chips offers a solution for many of the problems in power chip packages and power modules. While chip embedding was an academic exercise a decade ago, it is now an industrial solution. A huge advantage of packaging using PCB technology is the cost-effective processing on large panel. Furthermore embedded packages and modules allow either double-side cooling or 3D assembly of components like capacitors, gate drivers or controllers. The advanced results of research projects will be discussed in the paper. An ultra-low inductance power module with SiC switches at 20 A / 600 V has been realized and characterized. The DC link inductance of the module was 0,8 nH only. These results sparked a huge interest in currently starting follow up projects creating package for fast switches. In a further project power modules for automotive power inverters for motor control are under development. As a project demonstrator, a 10 kW module with IGBTs and diodes at 400 V / 500 A, was manufactured. This demonstrator is based on high power PCB technology and was fully characterized; the results will be presented in detail. Recently started research projects will face the challenges of MW solar inverters at 1000 A and 1000 V, using SiC semiconductors as switches. First concepts will be presented as an outlook.

The Design and Evaluation of an Integrated Wire-Bondless Power Module (IWPM) using Low Temperature Co-fired Ceramic Interposer

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000065-000072 ◽  
Author(s):  
Sayan Seal ◽  
Michael D. Glover ◽  
H. Alan Mantooth
Keyword(s):  
High Performance ◽  
High Reliability ◽  
Feasibility Studies ◽  
Wide Band ◽  
Power Devices ◽  
Power Module ◽  
Wide Band Gap ◽  
Fast Switching ◽  
Power Modules ◽  
Wide Band Gap Semiconductors

Abstract This paper presents the plan and initial feasibility studies for an Integrated Wire Bondless Power Module (IWPM). Contemporary power modules are moving toward unprecedented levels of power density. The ball has been set rolling by a drastic reduction in the size of bare die power devices themselves owing to the advent of wide band gap semiconductors like silicon carbide (SiC) and gallium nitride (GaN). SiC has capabilities of operating at much higher temperatures and faster switching speeds as compared with its silicon counterparts, while being a fraction of their size. However, electronic packaging technology has not kept pace with these developments. High performance packaging technologies do exist in isolation, but there has been limited success in integrating these disparate efforts into a single high performance package of sufficient reliability. This paper lays the foundation for an electronic package which is designed to completely leverage the benefits of SiC semiconductor technology, with a focus on high reliability and fast switching capability.

The Design and Evaluation of an Integrated Wire Bond-less Power Module using a Low Temperature Co-fired Ceramic Interposer

2016 ◽  
Vol 13 (4) ◽  
pp. 169-175
Author(s):  
Sayan Seal ◽  
Michael D. Glover ◽  
H. Alan Mantooth
Keyword(s):  
Low Temperature ◽  
High Performance ◽  
High Reliability ◽  
Feasibility Studies ◽  
Power Devices ◽  
Power Module ◽  
Fast Switching ◽  
Wire Bond ◽  
Power Modules ◽  
Bandgap Semiconductors

This article presents the plan and initial feasibility studies for an Integrated Wire Bond-less Power Module. Contemporary power modules are moving toward unprecedented levels of power density. The ball has been set rolling by a drastic reduction in the size of bare die power devices owing to the advent of wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride. SiC has capabilities of operating at much higher temperatures and faster switching speeds compared with its silicon counterparts, while being a fraction of their size. However, electronic packaging technology has not kept pace with these developments. High-performance packaging technologies do exist in isolation, but there has been limited success in integrating these disparate efforts into a single high-performance package of sufficient reliability. This article lays the foundation for an electronic package designed to completely leverage the benefits of SiC semiconductor technology, with a focus on high reliability and fast switching capability. The interconnections between the gate drive circuitry and the power devices were implemented using a low temperature cofired ceramic interposer.

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