Structural Characterization of Rat Galectin-5, an N-Tailed Monomeric Proto-Type-like Galectin

Galectins are multi-purpose effectors acting via interactions with distinct counterreceptors based on protein-glycan/protein recognition. These processes are emerging to involve several regions on the protein so that the availability of a detailed structural characterization of a full-length galectin is essential. We report here the first crystallographic information on the N-terminal extension of the carbohydrate recognition domain of rat galectin-5, which is precisely described as an N-tailed proto-type-like galectin. In the ligand-free protein, the three amino-acid stretch from Ser2 to Ser5 is revealed to form an extra β-strand (F0), and the residues from Thr6 to Asn12 are part of a loop protruding from strands S1 and F0. In the ligand-bound structure, amino acids Ser2–Tyr10 switch position and are aligned to the edge of the β-sandwich. Interestingly, the signal profile in our glycan array screening shows the sugar-binding site to preferentially accommodate the histo-blood-group B (type 2) tetrasaccharide and N-acetyllactosamine-based di- and oligomers. The crystal structures revealed the characteristically preformed structural organization around the central Trp77 of the CRD with involvement of the sequence signature’s amino acids in binding. Ligand binding was also characterized calorimetrically. The presented data shows that the N-terminal extension can adopt an ordered structure and shapes the hypothesis that a ligand-induced shift in the equilibrium between flexible and ordered conformers potentially acts as a molecular switch, enabling new contacts in this region.

Pemanfaatan Realtime Database di Platform Firebase Pada Aplikasi E-Tourism Kabupaten Nabire

Tourism objects in the district of Nabire relatively not developed much and has not been handled optimally due to lack of promotion. E-Tourism which is an electronic application for the tourism sector that can facilitate the user to visit a tourist site at a location. The currently available apps can not make real-time data changes regarding the position of the app's user coordinates to find out where to find the sights. This study aims to provide information to application users about the position of the location of the tour and the position of users who can change in real-time using firebase. This research uses experimental method, that is pinned firebase platform on E-Tourism so that application can utilize various real-time database feature in firebase. The system is tested by moving the user's position of the app to see changes in position data in real-time and will be shown on the application map. The next test by showing the location of tourism as well as the path traveled by the user to reach the sights. The results of this study show the position of the user that can change in real-time when the user to switch position without having to refresh the data manually (refresh). Applications can also display a list of tourist sites and the path taken to get to the tourist sites located in Nabire district.

A High Current (>1500A) Power Module for High Temperature, High Performance Applications Using SiC TMOS Power Switches

A high temperature, high performance power module was developed for extreme environment systems and applications to exploit the advantages of wide bandgap semiconductors. These power modules are rated > 1200V, > 100A, > 250 °C, and are designed to house any SiC or GaN device. Characterization data of this power module housing trench MOSFETs is presented which demonstrates an on-state current of 1500 A for a full-bridge switch position. In addition, switching waveforms are presented that exhibit fast transition times.

High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards

Arkansas Power Electronics International, Inc., in collaboration with the University of Arkansas and Rohm, Ltd., have developed a high-temperature, high-performance Silicon-Carbide (SiC) based power module with integrated gate driver. This paper presents a description of the single phase half-bridge module containing eight Rohm 30 A SiC DMOSFETs in parallel per switch position. The electrical and thermal performance of the system under power is also presented.