SIP with TSV for Class 1 Medical Devices

2016 ◽  
Vol 13 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Youngtak Lee ◽  
Doug Link
Keyword(s):  
Integrated Circuit ◽  
Flip Chip ◽  
Hearing Aid ◽  
Form Factors ◽  
Digital Signal ◽  
Multichip Module ◽  
Back Side ◽  
Digital Signal Process ◽  
Hearing Instruments ◽  
Class 1

The demand for greater performance of hearing instruments in smaller form factors continues to drive the need for miniaturization of microelectronic packages. This article reports how through-silicon-via (TSV) technology was used to shrink the size of a conventional digital signal process (DSP)-based system in package (SIP) used in the smallest in-the-ear hearing instruments. The conventional SIP is a heterogeneous multichip module containing a wire-bonded electrically erasable programmable read-only memory (EEPROM) die mounted atop a DSP flip-chip die along with 10 passive components built upon a high-density alumina substrate. The wire bonds of the conventional SIP, along with the extra space they require, are eliminated and replaced by TSV structures fabricated in the DSP integrated circuit (IC) wafer using the via-last method. A redistribution layer on the back side of the DSP IC enables direct attachment and electrical interconnection of the memory IC to the DSP IC. The result is a 23% smaller SIP with functionality demonstrated in hearing aid prototypes. This is believed to be the first demonstration of TSV in a heterogeneous hearing aid multichip module. This article describes the design approaches, materials, basic process steps, results, and challenges encountered in creating this novel TSV-SIP.

SIP with TSV for Class 1 Medical Devices

2014 ◽  
Vol 2014 (1) ◽  
pp. 000313-000318
Author(s):  
Doug Link
Keyword(s):  
Flip Chip ◽  
Hearing Aid ◽  
Form Factors ◽  
Multichip Module ◽  
Back Side ◽  
Passive Components ◽  
Wire Bonds ◽  
Electrical Interconnection ◽  
Hearing Instruments ◽  
Class 1

The demand for greater performance of hearing instruments in smaller form factors continues to drive the need for miniaturization of microelectronic packages. Reported here is how TSV technology was used to shrink the size of a conventional DSP-based system in package (SIP) used in the smallest In-The-Ear (ITE) hearing instruments. The conventional SIP is a heterogeneous multichip module containing a wire bonded EEPROM die mounted atop a DSP flip chip die along with 10 passive components built upon a high density alumina substrate. The wire bonds of the conventional SIP, along with the extra space they require, are eliminated and replaced by TSV structures fabricated in the DSP IC wafer using the via last method. A redistribution layer on the back side of the DSP IC enables direct attachment and electrical interconnection of the memory IC to the DSP IC. The result is a 23% smaller SIP with functionality demonstrated in hearing aid prototypes. This is believed to be the first demonstration of TSV in a heterogeneous hearing aid multichip module. This paper describes the design approach, materials, basic process steps, results, and challenges encountered in creating this novel TSV-SIP.

Electron Beam Absorbed Current as a Means of Locating Metal Defectivity on 45nm SOI Technology

2010 ◽  
Author(s):  
K. Dickson ◽  
G. Lange ◽  
K. Erington ◽  
J. Ybarra
Keyword(s):  
Electron Beam ◽  
Flip Chip ◽  
Back Side ◽  
Soi Technology

Abstract This paper describes the use of Electron Beam Absorbed Current (EBAC) mapping performed from the back side of the device as a means of locating metallization defects on flip chip 45nm SOI technology.

scholarly journals Toward a fully integrated automotive radar system-on-chip in 22 nm FD-SOI CMOS

2021 ◽  
pp. 1-9
Author(s):  
Philipp Ritter
Keyword(s):  
Millimeter Wave ◽  
Flip Chip ◽  
Printed Circuit Board ◽  
Digital Signal ◽  
Cmos Technology ◽  
Radar System ◽  
Circuit Board ◽  
Processing Unit ◽  
Automotive Radar ◽  
On Chip

Abstract Next-generation automotive radar sensors are increasingly becoming sensitive to cost and size, which will leverage monolithically integrated radar system-on-Chips (SoC). This article discusses the challenges and the opportunities of the integration of the millimeter-wave frontend along with the digital backend. A 76–81 GHz radar SoC is presented as an evaluation vehicle for an automotive, fully depleted silicon-over-insulator 22 nm CMOS technology. It features a digitally controlled oscillator, 2-millimeter-wave transmit channels and receive channels, an analog base-band with analog-to-digital conversion as well as a digital signal processing unit with on-chip memory. The radar SoC evaluation chip is packaged and flip-chip mounted to a high frequency printed circuit board for functional demonstration and performance evaluation.

The Effects of Receiver Placement on Probe Microphone, Performance, and Subjective Measures with Open Canal Hearing Instruments

2010 ◽  
Vol 21 (04) ◽  
pp. 249-266 ◽  
Author(s):  
Lynzee N. Alworth ◽  
Patrick N. Plyler ◽  
Monika Bertges Reber ◽  
Patti M. Johnstone
Keyword(s):  
Repeated Measures ◽  
Hearing Aid ◽  
Clinical Importance ◽  
Ease Of Use ◽  
Subjective Measures ◽  
Repeated Measures Design ◽  
Hearing Instruments ◽  
Data Collection And Analysis ◽  
Significant Difference ◽  
Occlusion Effect

Background: Open canal hearing instruments differ in method of sound delivery to the ear canal, distance between the microphone and the receiver, and physical size of the devices. Moreover, RITA (receiver in the aid) and RITE (receiver in the ear) hearing instruments may also differ in terms of retention and comfort as well as ease of use and care for certain individuals. What remains unclear, however, is if any or all of the abovementioned factors contribute to hearing aid outcome. Purpose: To determine the effect of receiver location on performance and/or preference of listeners using open canal hearing instruments. Research Design: An experimental study in which subjects were exposed to a repeated measures design. Study Sample: Twenty-five adult listeners with mild sloping to moderately severe sensorineural hearing loss (mean age 67 yr). Data Collection and Analysis: Participants completed two six-week trial periods for each device type. Probe microphone, objective, and subjective measures (quiet, noise) were conducted unaided and aided at the end of each trial period. Results: Occlusion effect results were not significantly different between the RITA and RITE instruments; however, frequency range was extended in the RITE instruments, resulting in significantly greater maximum gain for the RITE instruments than the RITA instruments at 4000 and 6000 Hz. Objective performance in quiet or in noise was unaffected by receiver location. Subjective measures revealed significantly greater satisfaction ratings for the RITE than for the RITA instruments. Similarly, preference in quiet and overall preference were significantly greater for the RITE than for the RITA instruments. Conclusions: Although no occlusion differences were noted between instruments, the RITE did demonstrate a significant difference in reserve gain before feedback at 4000 and 6000 Hz. Objectively; no positive benefit was noted between unaided and aided conditions on speech recognition tests. These results suggest that such testing may not be sensitive enough to determine aided benefit with open canal instruments. However, the subjective measures (Abbreviated Profile of Hearing Aid Benefit [APHAB] and subjective ratings) did indicate aided benefit for both instruments when compared to unaided. This further suggests the clinical importance of subjective measures as a way to measure aided benefit of open-fit devices.

scholarly journals Fabrication and Packaging of CMUT Using Low Temperature Co-Fired Ceramic

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 553 ◽  
Author(s):  
Fikret Yildiz ◽  
Tadao Matsunaga ◽  
Yoichi Haga
Keyword(s):  
Low Temperature ◽  
Integrated Circuit ◽  
Flip Chip ◽  
Ultrasonic Transducer ◽  
Silicon On Insulator ◽  
Anodic Bonding ◽  
Lateral Side ◽  
Membrane Thickness ◽  
Bonding Performance ◽  
Complex Admittance

This paper presents fabrication and packaging of a capacitive micromachined ultrasonic transducer (CMUT) using anodically bondable low temperature co-fired ceramic (LTCC). Anodic bonding of LTCC with Au vias-silicon on insulator (SOI) has been used to fabricate CMUTs with different membrane radii, 24 µm, 25 µm, 36 µm, 40 µm and 60 µm. Bottom electrodes were directly patterned on remained vias after wet etching of LTCC vias. CMUT cavities and Au bumps were micromachined on the Si part of the SOI wafer. This high conductive Si was also used as top electrode. Electrical connections between the top and bottom of the CMUT were achieved by Au-Au bonding of wet etched LTCC vias and bumps during anodic bonding. Three key parameters, infrared images, complex admittance plots, and static membrane displacement, were used to evaluate bonding success. CMUTs with a membrane thickness of 2.6 µm were fabricated for experimental analyses. A novel CMUT-IC packaging process has been described following the fabrication process. This process enables indirect packaging of the CMUT and integrated circuit (IC) using a lateral side via of LTCC. Lateral side vias were obtained by micromachining of fabricated CMUTs and used to drive CMUTs elements. Connection electrodes are patterned on LTCC side via and a catheter was assembled at the backside of the CMUT. The IC was mounted on the bonding pad on the catheter by a flip-chip bonding process. Bonding performance was evaluated by measurement of bond resistance between pads on the IC and catheter. This study demonstrates that the LTCC and LTCC side vias scheme can be a potential approach for high density CMUT array fabrication and indirect integration of CMUT-IC for miniature size packaging, which eliminates problems related with direct integration.

Evaluation of Low Stress Photo-Sensitive Spin On Dielectric Layers for Through Silicon Via (TSV) Copper Redistribution Layers

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 000666-000698
Author(s):  
Christopher Jahnes ◽  
Eric Huenger ◽  
Scott Kisting
Keyword(s):  
Power Distribution ◽  
Flip Chip ◽  
Dielectric Materials ◽  
Back Side ◽  
Thermal Reliability ◽  
Dielectric Layers ◽  
Chip Size ◽  
Package Density ◽  
Silicon Vias ◽  
Wafer Thinning

To increase performance of semiconductor devices advances in packaging such as chip stacking (3D) and silicon carrier technologies (SoC) are being developed. Adaptation of these packaging fabrication methods offers the ability to incorporate functionality as well as provide memory and power distribution on one IC with increased signal bandwidth. An enabling element in both the stacking and silicon carrier technologies is through silicon vias (TSV) which electrically connect dies to a silicon carrier or via stacked chips (1). Creation of TSV involves via fabrication, wafer thinning and back side wafer finishing, to name a few, some of which are relatively new to semiconductor processing. Furthermore, because the wafer backside is accessible it can now be utilized to route wiring to further increase package density. The focus of this research was to evaluate photo-sensitive spin on dielectric materials (SOD) that can be used as the backside wiring levels, commonly referred to as redistribution layers (RDL) in TSV technologies. The two materials evaluated are; the epoxy based Dow INTERVIA™ 8023 Dielectric and the Benzocyclobutene (BCB) polymer, Dow CYCLOTENE™ 4000 product series. These dielectric materials have low stress and provide good planarization (2). Test vehicles with a chip size of 3.7 cm x 2.26 cm were fabricated with a 6 um wide copper RDL layer using the SOD materials of interest as well as conventional PECVD SiO2/SiN dielectric layers. The large chip size accommodated parallel Cu lines running 1.8 cm long with a spacing of 3 m and represented an aggressive shorting test for the SOD materials. It also enhances chip distortion after thinning and is evaluated for all three test vehicles. Chips were then electrically tested through simulated 260° C reflow cycles (for flip chip joining) and accelerated thermal reliability tests from −55° C to 125° C for 1000 cycles.

“Cleaning”- The Dirty Word in Packaging Assembly

2010 ◽  
Vol 2010 (1) ◽  
pp. 000742-000746
Author(s):  
Rich Brooks
Keyword(s):  
Thermal Energy ◽  
Integrated Circuit ◽  
Flip Chip ◽  
New Technologies ◽  
Cleaning Process ◽  
Maximum Performance ◽  
Low Profile ◽  
Total Process ◽  
Temperature And Pressure

A majority of the package assembly facilities are using only DI water to remove flux residue from under flip-chip devices, prior to an underfill process. As the new technologies are being implemented, not only has DI water reached its limitations, but some cleaning chemistries are not able to perform adequately to remove ALL of the flux residues. Complete cleaning and removal of the flux residues under low profile components are critical to maintain the reliability of the integrated circuit. Therefore, the cleaning process must be carefully examined and optimized to obtain maximum performance for removing the flux residues. The total cleaning process can be broken down into two subsets:Static Cleaning rate & Dynamic Cleaning rate The Static Cleaning rate is ability of the cleaning chemistry to remove or dissolve the residue in the absence of temperature and pressure. The Dynamic Cleaning rate involves the kinetic forces and energy to remove the residue. This includes the Thermal energy and Impingement energy required to remove the flux residue. The sum of these two cleaning rates (Static and Dynamic cleaning rates) equal the Total Process Cleaning rate (see formula below). This paper will review cleaning problems brought about with the implementation of the latest technologies and explain how the cleaning process can be optimized to guarantee the reliability of the assemblies.

Development of 3D System-in-Package with TSV Technology

2014 ◽  
Vol 2014 (1) ◽  
pp. 000612-000617 ◽  
Author(s):  
Shota Miki ◽  
Takaharu Yamano ◽  
Sumihiro Ichikawa ◽  
Masaki Sanada ◽  
Masato Tanaka
Keyword(s):  
High Performance ◽  
Flip Chip ◽  
Organic Substrate ◽  
Back Side ◽  
Final Thickness ◽  
Chip Technology ◽  
Type Semiconductor ◽  
Interconnect Reliability ◽  
Solder Balls ◽  
Carrier Wafer

In recent years, products such as smart phones, tablets, and wearable devices, are becoming miniaturized and high performance. 3D-type semiconductor structures are advancing as the demand for high-density assembly increases. We studied a fabrication process using a SoC die and a memory die for 3D-SiP (System in Package) with TSV technology. Our fabrication is comprised of two processes. One is called MEOL (Middle End of Line) for exposing and completing the TSV's in the SoC die, and the other is assembling the SoC and memory dice in a 3D stack. The TSV completion in MEOL was achieved by SoC wafer back-side processing. Because its final thickness will be a thin 50μm (typical), the SoC wafer (300 mm diameter) is temporarily attached face-down onto a carrier-wafer. Careful back-side grinding reveals the “blind vias” and fully opens them into TSV's. A passivation layer is then grown on the back of the wafer. With planarization techniques, the via metal is accessed and TSV pads are built by electro-less plating without photolithography. After the carrier-wafer is de-bonded, the thin wafer is sawed into dice. For assembling the 3D die stack, flip-chip technology by thermo-compression bonding was the method chosen. First, the SoC die with copper pillar bumps is assembled to the conventional organic substrate. Next the micro-bumps on the memory die are bonded to the TSV pads of the SoC die. Finally, the finished assembly is encapsulated and solder balls (BGA) are attached. The 3D-SiP has passed both package-level reliability and board-level reliability testing. These results show we achieved fabricating a 3D-SiP with high interconnect reliability.

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