scholarly journals Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 199
Author(s):  
Jie Wang ◽  
Zhanfei Chen ◽  
Shuzhen You ◽  
Benoit Bakeroot ◽  
Jun Liu ◽  
...  
Keyword(s):  
Surface Potential ◽  
High Electron Mobility Transistors ◽  
Compact Modeling ◽  
Physical Parameters ◽  
High Electron ◽  
Doping Density ◽  
Electron Mobility Transistors ◽  
The Poisson Equation ◽  
Proposed Model ◽  
High Degree

We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation and its analytical approximate solution provide a high degree of accuracy for the SP calculation, from which the closed-form I–V equations are derived. The proposed model uses physical parameters only and is implemented in Verilog-A code.

scholarly journals Trapping Dynamics in GaN HEMTs for Millimeter-Wave Applications: Measurement-Based Characterization and Technology Comparison

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 137
Author(s):  
Alberto Maria Angelotti ◽  
Gian Piero Gibiino ◽  
Corrado Florian ◽  
Alberto Santarelli
Keyword(s):  
Millimeter Wave ◽  
Charge Trapping ◽  
High Electron Mobility Transistors ◽  
Experimental Methodology ◽  
Compact Modeling ◽  
High Electron ◽  
Large Signal ◽  
Electron Mobility Transistors ◽  
Capture And Release ◽  
Thermal Phenomena

Charge trapping effects represent a major challenge in the performance evaluation and the measurement-based compact modeling of modern short-gate-length (i.e., ≤0.15 m) Gallium Nitride (GaN) high-electron mobility transistors (HEMT) technology for millimeter-wave applications. In this work, we propose a comprehensive experimental methodology based on multi-bias large-signal transient measurements, useful to characterize charge-trapping dynamics in terms of both capture and release mechanisms across the whole device safe operating area (SOA). From this dataset, characterizations, such as static-IV , pulsed-IV, and trapping time constants, are seamlessly extracted, thus allowing for the separation of trapping and thermal phenomena and delivering a complete basis for measurement-based compact modeling. The approach is applied to different state-of-the-art GaN HEMT commercial technologies, providing a comparative analysis of the measured effects.

Aluminium Gallium Nitride (AlGaN)/Gallium Nitride (GaN)/Boron Gallium Nitride (BGaN) High Electron Mobility Transistors (HEMT): From Normally-On to Normally-Off Transistor

2020 ◽  
Vol 18 (5) ◽  
pp. 366-370
Author(s):  
Wafa Maati ◽  
Abdelkader Hamdoune
Keyword(s):  
Gallium Nitride ◽  
Threshold Voltage ◽  
High Electron Mobility Transistors ◽  
Physical Parameters ◽  
High Electron ◽  
Aluminium Gallium Nitride ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
X Band

In this paper, using the simulator TCAD SILVACO, the physical parameters to pass from a normallyon to a normally-off AlGaN/GaN HEMT with a BGaN back-barrier, was studied. With n-doped donor layer at 1 × 1016 cm–3, as a results we obtain a threshold voltage of 0.509 V normally-off AlGaN/GaN HEMT. The first transistor is able to operate in high power in better way; the second one is efficient for weak signals up to the X-band, and it has the advantage of being normally-off.

HVPE-GROWN AlGaN/GaN HEMTs

2003 ◽  
Vol 764 ◽  
Author(s):  
B. Luo ◽  
F. Ren ◽  
M. A. Mastro ◽  
D. Tsvetkov ◽  
A. Pechnikov ◽  
...  
Keyword(s):  
High Electron Mobility Transistors ◽  
Hydride Vapor Phase Epitaxy ◽  
Root Mean Square Roughness ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Collapse Characteristics ◽  
Capacitance Voltage ◽  
Source Current ◽  
Measurement Area

AbstractHigh quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al2O3 substrates is excellent with root-mean-square roughness of ∼0.2nm over 10×10μm2 measurement area. Capacitance-voltage measurements show formation of dense sheet of charge at the AlGaN/GaN interface. HEMTs with 1μm gate length fabricated on these structures show transconductances in excess of 110 mS/mm and drain-source current above 0.6A/mm. Gate lag measurements show similar current collapse characteristics to HEMTs fabricated in MBE- or MOCVD grown material.

IR Thermography for Temperature Measurements and Fault Location on AlGaN/GaN HEMTs and MMICs

2015 ◽  
Author(s):  
Lény Baczkowski ◽  
Franck Vouzelaud ◽  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Jean-Claude Clément ◽  
...  
Keyword(s):  
Fault Location ◽  
Hot Spot ◽  
Life Time ◽  
High Electron Mobility Transistors ◽  
Junction Temperature ◽  
High Electron ◽  
Ir Thermography ◽  
Operating Life ◽  
Gan Hemt ◽  
Electron Mobility Transistors

Abstract This paper shows a specific approach based on infrared (IR) thermography to face the challenging aspects of thermal measurement, mapping, and failure analysis on AlGaN/GaN high electron-mobility transistors (HEMTs) and MMICs. In the first part of this paper, IR thermography is used for the temperature measurement. Results are compared with 3D thermal simulations (ANSYS) to validate the thermal model of an 8x125pm AIGaN/GaN HEMT on SiC substrate. Measurements at different baseplate temperature are also performed to highlight the non-linearity of the thermal properties of materials. Then, correlations between the junction temperature and the life time are also discussed. In the second part, IR thermography is used for hot spot detection. The interest of the system for defect localization on AIGaN/GaN HEMT technology is presented through two case studies: a high temperature operating life test and a temperature humidity bias test.

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