International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)

Optimizing the electromigration performance of copper interconnects

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904272 ◽

2002 ◽

Cited By ~ 7

Author(s):

P. Besser ◽

A. Marathe ◽

L. Zhao ◽

M. Herrick ◽

C. Capasso ◽

...

Keyword(s):

Copper Interconnects

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The ballistic nanotransistor: a simulation study

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904418 ◽

2002 ◽

Cited By ~ 3

Author(s):

Zhibin Ren ◽

R. Venugopal ◽

S. Datta ◽

M. Lundstrom ◽

D. Jovanovic ◽

...

Keyword(s):

Simulation Study

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Novel epitaxial p-Si/n-Si/sub 1-y/C/sub y//p-Si heterojunction bipolar transistors

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904426 ◽

2002 ◽

Cited By ~ 1

Author(s):

D.V. Singh ◽

J.L. Hoyt ◽

J.F. Gibbons

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors

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A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904411 ◽

2002 ◽

Cited By ~ 12

Author(s):

J. De Blauwe ◽

M. Ostraat ◽

M.L. Green ◽

G. Weber ◽

T. Sorsch ◽

...

Keyword(s):

Floating Gate ◽

Non Volatile Memory ◽

Volatile Memory ◽

Memory Applications

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High temperature operated (∼250 K) photovoltaic-photoconductive (PV-PC) mixed-mode InAs/GaAs quantum dot infrared photodetector

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904391 ◽

2002 ◽

Author(s):

Shiang-Feng Tang ◽

Shih-Yen Lin ◽

Si-Chen Lee ◽

Chieh Hsiung Kuan ◽

Ya-Tung Cherng

Keyword(s):

High Temperature ◽

Quantum Dot ◽

Mixed Mode ◽

Infrared Photodetector ◽

Quantum Dot Infrared Photodetector ◽

Gaas Quantum Dot

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A 0.2-μm 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904424 ◽

2002 ◽

Cited By ~ 10

Author(s):

K. Washio ◽

E. Ohue ◽

H. Shimamoto ◽

K. Oda ◽

R. Hayami ◽

...

Keyword(s):

High Speed ◽

Cmos Technology ◽

Sige Hbt

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A physical model for implanted nitrogen diffusion and its effect on oxide growth

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904366 ◽

2002 ◽

Cited By ~ 3

Author(s):

L.S. Adam ◽

M.E. Law ◽

O. Dokumaci ◽

S. Hegde

Keyword(s):

Physical Model ◽

Oxide Growth ◽

Nitrogen Diffusion

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Room-temperature memory operation of AlGaAs/GaAs high electron mobility transistors with InAs quantum dots embedded in the channel

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904392 ◽

2002 ◽

Author(s):

Jae-Eung Oh ◽

Jong-Wook Kim

Keyword(s):

Quantum Dots ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

High Electron ◽

Inas Quantum Dots ◽

High Electron Mobility ◽

Electron Mobility Transistors

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SiGe bipolar technology for mixed digital and analogue RF applications

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904425 ◽

2002 ◽

Cited By ~ 15

Author(s):

J. Bbck ◽

T.F. Meister ◽

H. Knapp ◽

D. Zoschg ◽

H. Schafer ◽

...

Keyword(s):

Bipolar Technology ◽

Rf Applications

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Spot-size-converted 1.3 μm directly-modulated Fabry-Perot and distributed feedback lasers suitable for passive alignment and 2.5 gb/s operation at 85°C

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904390 ◽

2002 ◽

Cited By ~ 1

Author(s):

D. Klotzkin ◽

J. Sheridan-Eng ◽

A. Mazzatesta ◽

G. Ford ◽

J. Laquindinum ◽

...

Keyword(s):

Spot Size ◽

Distributed Feedback ◽

Distributed Feedback Lasers ◽

Fabry Perot ◽

Passive Alignment

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International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Optimizing the electromigration performance of copper interconnects

The ballistic nanotransistor: a simulation study

Novel epitaxial p-Si/n-Si/sub 1-y/C/sub y//p-Si heterojunction bipolar transistors

A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications

High temperature operated (∼250 K) photovoltaic-photoconductive (PV-PC) mixed-mode InAs/GaAs quantum dot infrared photodetector

A 0.2-μm 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

A physical model for implanted nitrogen diffusion and its effect on oxide growth

Room-temperature memory operation of AlGaAs/GaAs high electron mobility transistors with InAs quantum dots embedded in the channel

SiGe bipolar technology for mixed digital and analogue RF applications

Spot-size-converted 1.3 μm directly-modulated Fabry-Perot and distributed feedback lasers suitable for passive alignment and 2.5 gb/s operation at 85°C

Export Citation Format

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Optimizing the electromigration performance of copper interconnects

The ballistic nanotransistor: a simulation study

Novel epitaxial p-Si/n-Si/sub 1-y/C/sub y//p-Si heterojunction bipolar transistors

A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications

High temperature operated (∼250 K) photovoltaic-photoconductive (PV-PC) mixed-mode InAs/GaAs quantum dot infrared photodetector

A 0.2-μm 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

A physical model for implanted nitrogen diffusion and its effect on oxide growth

Room-temperature memory operation of AlGaAs/GaAs high electron mobility transistors with InAs quantum dots embedded in the channel

SiGe bipolar technology for mixed digital and analogue RF applications

Spot-size-converted 1.3 μm directly-modulated Fabry-Perot and distributed feedback lasers suitable for passive alignment and 2.5 gb/s operation at 85°C

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)
Latest Publications