Aluminium Gallium Nitride (AlGaN)/Gallium Nitride (GaN)/Boron Gallium Nitride (BGaN) High Electron Mobility Transistors (HEMT): From Normally-On to Normally-Off Transistor

2020 ◽  
Vol 18 (5) ◽  
pp. 366-370
Author(s):  
Wafa Maati ◽  
Abdelkader Hamdoune
Keyword(s):  
Gallium Nitride ◽  
Threshold Voltage ◽  
High Electron Mobility Transistors ◽  
Physical Parameters ◽  
High Electron ◽  
Aluminium Gallium Nitride ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
X Band

In this paper, using the simulator TCAD SILVACO, the physical parameters to pass from a normallyon to a normally-off AlGaN/GaN HEMT with a BGaN back-barrier, was studied. With n-doped donor layer at 1 × 1016 cm–3, as a results we obtain a threshold voltage of 0.509 V normally-off AlGaN/GaN HEMT. The first transistor is able to operate in high power in better way; the second one is efficient for weak signals up to the X-band, and it has the advantage of being normally-off.

scholarly journals Development of AlGaN/GaN/SiC high-electron-mobility transistors for THz detection

2018 ◽  
Vol 58 (2) ◽  
Author(s):  
Vytautas Jakštas ◽  
Justinas Jorudas ◽  
Vytautas Janonis ◽  
Linas Minkevičius ◽  
Irmantas Kašalynas ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Schottky Diodes ◽  
Electronic Devices ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Steady Current ◽  
Improved Performance

This paper reports on the AlGaN/GaN Schottky diodes (SDs) and high-electron-mobility transistors (HEMTs) grown on a semi-insulating SiC substrate. The electronic devices demonstrate an improved performance in comparison with the ones processed on a sapphire substrate. Both the SDs and HEMTs show much smaller leakage current density and a higher ION/IOFF ratio, reaching values down to 3.0±1.2 mA/cm2 and up to 70 dB under the reverse electric field of 340 kV/cm, respectively. The higher thermal conductivity of the SiC substrate leads to the increase of steady current and transconductance, and better thermal management of the HEMT devices. In addition, a successful detection of terahertz (THz) waves with the AlGaN/GaN HEMT is demonstrated at room temperature. These results open further routes for the optimization of THz designs which may result in development of novel plasmonic THz devices.

Reliability issues of Gallium Nitride High Electron Mobility Transistors

2010 ◽  
Vol 2 (1) ◽  
pp. 39-50 ◽  
Author(s):  
Gaudenzio Meneghesso ◽  
Matteo Meneghini ◽  
Augusto Tazzoli ◽  
Nicolo' Ronchi ◽  
Antonio Stocco ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
Failure Modes ◽  
Deep Level ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Stress Tests ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts

In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and the progress in mean time to failure values, reliability of GaN HEMTs, and millimeter microwave integrated circuits still represent a relevant issue for the market penetration of these devices. The role of temperature in promoting GaN HEMT failure is controversial, and the accelerating degradation factors are largely unknown. The present paper proposes a methodology for the analysis of failure modes and mechanisms of GaN HEMTs, based on (i) DC and RF stress tests accompanied by an (ii) extensive characterization of traps using deep level transient spectroscopy and pulsed measurements, (iii) detailed analysis of electrical characteristics, and (iv) comparison with two-dimensional device simulations. Results of failure analysis using various microscopy and spectroscopy techniques are presented and failure mechanisms observed at the high electric field values typical of the operation of these devices are reviewed.

Wave approach for noise modeling of gallium nitride high electron-mobility transistors

2015 ◽  
Vol 30 (1) ◽  
pp. e2138 ◽  
Author(s):  
Vladica Đorđević ◽  
Zlatica Marinković ◽  
Giovanni Crupi ◽  
Olivera Pronić-Rančić ◽  
Vera Marković ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Noise Modeling ◽  
Wave Approach ◽  
Electron Mobility Transistors

scholarly journals Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

2014 ◽  
Vol 105 (26) ◽  
pp. 263503 ◽  
Author(s):  
Sanyam Bajaj ◽  
Ting-Hsiang Hung ◽  
Fatih Akyol ◽  
Digbijoy Nath ◽  
Siddharth Rajan
Keyword(s):  
Threshold Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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