Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

David A. Deen; Ross A. Miller; Andrei V. Osinsky; Brian P. Downey; David F. Storm; David J. Meyer; D. Scott Katzer; Neeraj Nepal

doi:10.1063/1.4972225

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.4972225 ◽

2016 ◽

Vol 120 (23) ◽

pp. 235704 ◽

Cited By ~ 4

Author(s):

David A. Deen ◽

Ross A. Miller ◽

Andrei V. Osinsky ◽

Brian P. Downey ◽

David F. Storm ◽

...

Keyword(s):

Surface Potential ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Debye Screening ◽

High Electron Mobility ◽

Potential Fluctuations ◽

Electron Mobility Transistors ◽

Dual Channel

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Surface potential measurements of AlGaN∕GaN high-electron-mobility transistors by Kelvin probe force microscopy

Applied Physics Letters ◽

10.1063/1.1835551 ◽

2004 ◽

Vol 85 (24) ◽

pp. 6028-6029 ◽

Cited By ~ 14

Author(s):

Kohei Nakagami ◽

Yutaka Ohno ◽

Shigeru Kishimoto ◽

Koichi Maezawa ◽

Takashi Mizutani

Keyword(s):

Surface Potential ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Kelvin Probe Force Microscopy ◽

High Electron ◽

Kelvin Probe ◽

High Electron Mobility ◽

Force Microscopy ◽

Electron Mobility Transistors ◽

Surface Potential Measurements

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Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors

Superlattices and Microstructures ◽

10.1016/j.spmi.2011.07.005 ◽

2011 ◽

Vol 50 (4) ◽

pp. 289-295

Author(s):

Kuei-Yi Chu ◽

Shiou-Ying Cheng ◽

Meng-Hsueh Chiang ◽

Yi-Jung Liu ◽

Chien-Chang Huang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dual Channel

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Kelvin probe force microscopy study of surface potential transients in cleaved AlGaN∕GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.2743383 ◽

2007 ◽

Vol 90 (21) ◽

pp. 213511 ◽

Cited By ~ 18

Author(s):

S. Kamiya ◽

M. Iwami ◽

T. Tsuchiya ◽

M. Kurouchi ◽

J. Kikawa ◽

...

Keyword(s):

Surface Potential ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Microscopy Study ◽

Kelvin Probe Force Microscopy ◽

High Electron ◽

Kelvin Probe ◽

High Electron Mobility ◽

Force Microscopy ◽

Electron Mobility Transistors

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Surface Potential based analysis of MgZnO/ZnO High Electron Mobility Transistors

2018 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) ◽

10.1109/sceecs.2018.8546962 ◽

2018 ◽

Author(s):

Yogesh Kumar Verma ◽

Santosh Kumar Gupta ◽

Varun Mishra ◽

Prateek Kishor Verma

Keyword(s):

Surface Potential ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Molecular-beam epitaxy growth of InGaAs–InAlAs high electron mobility transistors with enhanced electron densities and measurement of InAlAs surface potential

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1379793 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1524 ◽

Cited By ~ 2

Author(s):

E. Skuras ◽

G. Pennelli ◽

A. R. Long ◽

C. R. Stanley

Keyword(s):

Molecular Beam Epitaxy ◽

Surface Potential ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Electron Densities ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors

Solid-State Electronics ◽

10.1016/j.sse.2011.09.009 ◽

2012 ◽

Vol 72 ◽

pp. 22-28 ◽

Cited By ~ 6

Author(s):

Kuei-Yi Chu ◽

Shiou-Ying Cheng ◽

Meng-Hsueh Chiang ◽

Yi-Jung Liu ◽

Chien-Chang Huang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dual Channel ◽

Comprehensive Study

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A simple DC model for dual channel high electron mobility transistors

IEEE. APCCAS 1998. 1998 IEEE Asia-Pacific Conference on Circuits and Systems. Microelectronics and Integrating Systems. Proceedings (Cat. No.98EX242) ◽

10.1109/apccas.1998.743938 ◽

2002 ◽

Author(s):

V. Kasemsuwan

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dual Channel

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A small signal model for dual channel high electron mobility transistors

Proceedings of 1994 37th Midwest Symposium on Circuits and Systems ◽

10.1109/mwscas.1994.519384 ◽

2002 ◽

Author(s):

R. Gupta ◽

M. El Nokali

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Signal Model ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dual Channel ◽

Small Signal Model

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A model for dual-channel high electron mobility transistors

Solid-State Electronics ◽

10.1016/0038-1101(94)e0069-q ◽

1995 ◽

Vol 38 (1) ◽

pp. 51-57 ◽

Cited By ~ 15

Author(s):

Ravi Gupta ◽

M. El Nokali

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dual Channel

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Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Cited By ~ 36

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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