Kelvin probe force microscopy study of surface potential transients in cleaved AlGaN∕GaN high electron mobility transistors

2007 ◽  
Vol 90 (21) ◽  
pp. 213511 ◽  
Author(s):  
S. Kamiya ◽  
M. Iwami ◽  
T. Tsuchiya ◽  
M. Kurouchi ◽  
J. Kikawa ◽  
...  
Keyword(s):  
Surface Potential ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Microscopy Study ◽  
Kelvin Probe Force Microscopy ◽  
High Electron ◽  
Kelvin Probe ◽  
High Electron Mobility ◽  
Force Microscopy ◽  
Electron Mobility Transistors

Electron Microscopy Study of Localized Gate Forward Breakdown in AlGaN/AlN/GaN High Electron Mobility Transistors

2008 ◽  
Vol 14 (S2) ◽  
pp. 624-625
Author(s):  
L Li ◽  
NT Nuhfer ◽  
M Skowronski
Keyword(s):  
Electron Microscopy ◽  
New Mexico ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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