scholarly journals Trapping Dynamics in GaN HEMTs for Millimeter-Wave Applications: Measurement-Based Characterization and Technology Comparison

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 137
Author(s):  
Alberto Maria Angelotti ◽  
Gian Piero Gibiino ◽  
Corrado Florian ◽  
Alberto Santarelli
Keyword(s):  
Millimeter Wave ◽  
Charge Trapping ◽  
High Electron Mobility Transistors ◽  
Experimental Methodology ◽  
Compact Modeling ◽  
High Electron ◽  
Large Signal ◽  
Electron Mobility Transistors ◽  
Capture And Release ◽  
Thermal Phenomena

Charge trapping effects represent a major challenge in the performance evaluation and the measurement-based compact modeling of modern short-gate-length (i.e., ≤0.15 m) Gallium Nitride (GaN) high-electron mobility transistors (HEMT) technology for millimeter-wave applications. In this work, we propose a comprehensive experimental methodology based on multi-bias large-signal transient measurements, useful to characterize charge-trapping dynamics in terms of both capture and release mechanisms across the whole device safe operating area (SOA). From this dataset, characterizations, such as static-IV , pulsed-IV, and trapping time constants, are seamlessly extracted, thus allowing for the separation of trapping and thermal phenomena and delivering a complete basis for measurement-based compact modeling. The approach is applied to different state-of-the-art GaN HEMT commercial technologies, providing a comparative analysis of the measured effects.

scholarly journals Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors

2013 ◽  
Vol 114 (3) ◽  
pp. 033105 ◽  
Author(s):  
N. Nader Esfahani ◽  
R. E. Peale ◽  
W. R. Buchwald ◽  
C. J. Fredricksen ◽  
J. R. Hendrickson ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Two Dimensional ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Millimeter-wave low-noise high electron mobility transistors

1985 ◽  
Vol 6 (10) ◽  
pp. 531-533 ◽  
Author(s):  
P.C. Chao ◽  
S.C. Palmateer ◽  
P.M. Smith ◽  
U.K. Mishra ◽  
K.H.G. Duh ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Boron Nitride as a Passivation Capping Layer for AlGaN/GaN High Electron Mobility Transistors

2020 ◽  
Vol 20 (7) ◽  
pp. 4450-4453 ◽  
Author(s):  
Gun Hee Lee ◽  
Ah Hyun Park ◽  
Jin Hong Lim ◽  
Chil-Hyoung Lee ◽  
Dae-Woo Jeon ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Mobility ◽  
Hexagonal Boron Nitride ◽  
Electronic Devices ◽  
Charge Trapping ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Capping Layer ◽  
Electron Mobility Transistors

We report on the electrical characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with hexagonal boron nitride (h-BN) as a passivation capping layer. The HEMTs with h-BN layers showed an increase in current drainage and 103-times reduction in the gate-leakage current compared with those of conventional unpassivated HEMTs. Moreover, the extrinsic transconductance and the pulse responses were improved due to the reduced charge-trapping effect at the surface of HEMTs. From our observations, the h-BN can be used as a passivation capping layer for high-power electronic devices.

Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs

2016 ◽  
Vol 8 (4-5) ◽  
pp. 663-672 ◽  
Author(s):  
Agostino Benvegnù ◽  
Davide Bisi ◽  
Sylvain Laurent ◽  
Matteo Meneghini ◽  
Gaudenzio Meneghesso ◽  
...  
Keyword(s):  
Deep Level ◽  
Low Frequency ◽  
Frequency Dispersion ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Current Transient ◽  
High Electron ◽  
Large Signal ◽  
Class Ab ◽  
Electron Mobility Transistors

This paper presents a detailed trap investigation based on combined pulsed I/V measurements, drain current transient (DCT) measurements and low-frequency dispersion measurements of transconductance (LF Y21) and output conductance (LF Y22). DCT characterization is carried out over a 7-decade time scale. LF Y21and Y22measurements are carried out over the frequency range from 100 Hz to 1 GHz. These combined measurements were performed at several temperatures for AlGaN/GaN high electron mobility transistors under class AB bias condition and allowed the extraction of the activation energy (Ea) and the capture cross section (σc) of the identified traps. Extensive measurements of these characteristics as a function of device bias are reported in this work to understand the dynamic trap behavior. This paper demonstrated a correlation between LF small-signal (LF Y21and Y22) and large-signal voltage steps (DCT) results. These measurements allow identifying the same 0.64 eV deep level, attributed to a native defect of GaN, possibly located in the buffer layer.

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