Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Wipakorn Jevasuwan; Yuji Urabe; Tatsuro Maeda; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Masahiko Hata; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

doi:10.3390/ma5030404

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Materials ◽

10.3390/ma5030404 ◽

2012 ◽

Vol 5 (12) ◽

pp. 404-414 ◽

Cited By ~ 13

Author(s):

Wipakorn Jevasuwan ◽

Yuji Urabe ◽

Tatsuro Maeda ◽

Noriyuki Miyata ◽

Tetsuji Yasuda ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Semiconductor Device ◽

Atomic Layer ◽

Formation Mechanisms ◽

Device Performance ◽

Interface Formation ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies

Journal of Applied Physics ◽

10.1063/1.4808093 ◽

2013 ◽

Vol 113 (20) ◽

pp. 204505 ◽

Cited By ~ 32

Author(s):

Christine M. Jackson ◽

Aaron R. Arehart ◽

Emre Cinkilic ◽

Brian McSkimming ◽

James S. Speck ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Deep Level ◽

Atomic Layer ◽

Interface Trap ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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AlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with thermal atomic layer deposition AlN gate dielectric

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.096502 ◽

2018 ◽

Vol 57 (9) ◽

pp. 096502 ◽

Cited By ~ 4

Author(s):

Lin-Qing Zhang ◽

Peng-Fei Wang

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Gate Dielectric ◽

Atomic Layer ◽

High Electron Mobility Transistor ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4768170 ◽

2013 ◽

Vol 31 (1) ◽

pp. 01A128 ◽

Cited By ~ 16

Author(s):

Oihane Beldarrain ◽

Marta Duch ◽

Miguel Zabala ◽

Joan Marc Rafí ◽

Mireia Bargalló González ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab2c62 ◽

2019 ◽

Vol 58 (7) ◽

pp. 070907 ◽

Cited By ~ 3

Author(s):

So-Yeong Na ◽

So-Jung Yoon ◽

Seung-Youl Kang ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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Impact of oxide gate electrode for ferroelectric field-effect transistors with metal-ferroelectric-metal-insulator-semiconductor gate stack using undoped HfO2 thin films prepared by atomic layer deposition

Nanotechnology ◽

10.1088/1361-6528/abc98c ◽

2020 ◽

Vol 32 (8) ◽

pp. 085709

Author(s):

Se-Na Choi ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Gate Electrode ◽

Gate Stack ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides

Applied Physics Letters ◽

10.1063/1.1585129 ◽

2003 ◽

Vol 82 (26) ◽

pp. 4758-4760 ◽

Cited By ~ 129

Author(s):

Martin M. Frank ◽

Yves J. Chabal ◽

Glen D. Wilk

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Formation Mechanisms ◽

Interface Formation ◽

Gate Oxides ◽

Layer Deposition

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Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4964693 ◽

2016 ◽

Vol 34 (6) ◽

pp. 06K901 ◽

Cited By ~ 2

Author(s):

Albert Colon ◽

Liliana Stan ◽

Ralu Divan ◽

Junxia Shi

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition ◽

Capacitor Structure ◽

Compositional Effects

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Improving Interface Characteristics of Al2O3-Based Metal-Insulator-Semiconductor(MIS) Diodes Using H2O Prepulse Treatment by Atomic Layer Deposition

Korean Journal of Materials Research ◽

10.3740/mrsk.2017.27.7.362 ◽

2017 ◽

Vol 27 (7) ◽

pp. 362-366

Author(s):

Hogyoung Kim ◽

◽

Min Soo Kim ◽

Sung Yeon Ryu ◽

Byung Joon Choi

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition ◽

Interface Characteristics

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Incorporation of Al or Hf in atomic layer deposition TiO2 for ternary dielectric gate insulation of InAlN/GaN and AlGaN/GaN metal-insulator-semiconductor-heterojunction structure

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4972252 ◽

2017 ◽

Vol 35 (1) ◽

pp. 01B132 ◽

Cited By ~ 2

Author(s):

Albert Colon ◽

Liliana Stan ◽

Ralu Divan ◽

Junxia Shi

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Heterojunction Structure ◽

Layer Deposition

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Electrical properties of GaN-based metal–insulator–semiconductor structures with Al2O3deposited by atomic layer deposition using water and ozone as the oxygen precursors

Semiconductor Science and Technology ◽

10.1088/0268-1242/29/4/045004 ◽

2014 ◽

Vol 29 (4) ◽

pp. 045004 ◽

Cited By ~ 25

Author(s):

Toshiharu Kubo ◽

Joseph J Freedsman ◽

Yasuhiro Iwata ◽

Takashi Egawa

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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