Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN
2016 ◽
Vol 34
(6)
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pp. 06K901
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Keyword(s):
2018 ◽
Vol 57
(9)
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pp. 096502
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2013 ◽
Vol 31
(1)
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pp. 01A128
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2019 ◽
Vol 58
(7)
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pp. 070907
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2017 ◽
Vol 35
(1)
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pp. 01B132
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2014 ◽
Vol 29
(4)
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pp. 045004
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